HITACHI 2SC458K

2SC458(K)
Silicon NPN Epitaxial
Application
• Low frequency amplifier
• Medium speed switching
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC458 (K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
30
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
100
mA
Emitter current
IE
–100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
30
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 18 V, IE = 0
Emitter cutoff current
I EBO
—
—
1.0
µA
VEB = 4 V, IC = 0
100
—
500
1
DC current transfer ratio
hFE*
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.4
V
I C = 10 mA, IB = 1 mA
Base to emitter voltage
VBE(sat)
—
—
1.0
V
I C = 10 mA, IB = 1 mA
Gain bandwidth product
fT
100
—
—
MHz
VCE = 10 V, IC = 10 mA
Collector output capacitance
Cob
—
—
4
pF
VCB = 10 V, IE = 0, f = 1 MHz
Turn on time
t on
—
80
—
ns
I C = 10 IB1 = –10 IB2 = 10 mA,
VCC = 10 V
Turn off time
t off
—
300
—
ns
Storage time
t stg
—
260
—
ns
Note:
1. The 2SC458 (K) is grouped by hFE as follows.
B
C
D
100 to 200
160 to 320
250 to 500
2
VCE = 1 V, IC = 10 mA
I C = IB1 = –IB2 = 20 mA,
VCC = 5 V
2SC458 (K)
Small Signal h Parameters
Item
Symbol
Typ
Unit
Test conditions
Input impedance
hie
16.5
kΩ
VCE = 5 V, IC = 0.1 mA,
f = 270 Hz
Voltage feedback ratio
hre
70
× 10 –6
Current transfer ratio
hfe
130
Output admittance
hoe
11
µS
Switching Time Test Circuit
tstg Test Circuit
Switching Time Test Circuit
ton, toff Test Circuit
6k
P.G.
tr, tf <
= 20 ns
PW >
= 2 µs
0.005 µ
50
–6 V
D.U.T
0.5 µ 220
CRT
D.U.T
6k
0.005 µ
– +
50 µ
– +
50 µ
CRT
240
1k
10 V
Unit R:Ω
C:F
P.G.
tr <
= 10 ns
PW >
= 1 µs
Response Waveform
100
200
0.002 µ
7V
– +
50 µ
0.002 µ
– +
50 µ
5V
Unit R:Ω
C:F
Response Waveform
13 V
0
Input
Input
0
10%
–9 V
90%
Output
Output
10%
10%
ton
tstg
toff
IC
IB1
IB2
VCC
VBB
Vin
10 mA
1 mA
–1 mA
10 V
–6 V
13 V
IC
IB1
IB2
20 mA 20 mA –20 mA
VCC
VBB
Vin
5V
7V
–9 V
3
2SC458 (K)
Collector Cutoff Current vs.
Collector to Base Voltage
100
Collector cutoff current ICBO (nA)
Collector power dissipation PC (mW)
Maximum Collector Dissipation Curve
250
200
150
100
50
50
100
Ambient Tmperature Ta (°C)
100
10
75
3
1.0
50
0.3
Ta = 25°C
0.1
0
5
10 15 20 25 30
Collector to Base Voltage VCB (V)
150
Typical Output Characteristics (2)
Typical Output Characteristics (1)
80
60
2.01.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
0.2
20
0.1 mA
2.0
14
Collector Current IC (mA)
100
Collector Current IC (mA)
30
0.03
0
1.8
1.2
0
1.6
0.4
0.8
1.2
2.0
Collector to Emitter Voltage VCE (V)
12
10
8
6
0.8
0.4
IB = 0
4
125
0
4
2
1 µA
IB = 0
20
40
60
80
100
Collector to Emitter Voltage VCE (V)
2SC458 (K)
DC Current Transfer Ratio vs.
Collector Current
1.0
100
50
20
DC Current Transfer Ratio hFE
0.6
10
IC = 5 mA
240
0.8
0.4
0.2
0
0.02 0.05 0.1 0.2 0.5 1.0 2
Base Current IB (mA)
5
10
20
00°C
Ta = 1
75
50
25
0
–25
–50
200
160
120
80
0
0.5
1.0
Base to Emitter Saturation Voltage vs.
Collector Current
1.2
IC = 10 IB
1.0
–25
25
°C
Ta = 75
0.8
0.6
0.4
0.2
0
1
2
5
10
20
50
Collector Current IC (mA)
100
VCE = 1 V
40
2
5
10
20
Collector Current IC (mA)
50
100
Collector to Emitter Saturation
Voltage vs. Collector Current
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Base to Emitter Saturation Voltage VBE (sat) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation
Voltage vs. Base Current
0.28
0.24
IC = 10 IB
0.20
0.16
0.12
0.08
Ta = 25°C
0.04
–50
0
1
2
5
10 20
50 100
Collector Current IC (mA)
5
2SC458 (K)
Input and Output Capacitance vs.
Voltage
VCE = 10 V
400
0
0.5
1.0
2
5
10
Collector Current IC (mA)
0)
100
6
=
200
f = 1 MHz
7
(I C
300
8
C ib
Gain Bandwidth Product fT (MHz)
500
Collector output Capacitance Cob (pF)
Emitter Input Capacitance Cib (pF)
Gain Bandwidth Product vs.
Collector Current
5
C
ob
4
2
0.3
1.0
3
10
30
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
h Parameter vs. Collector Current
tstg
0.2
0.1
ton
0.05
td
0.02
0.01
1
6
2
5
10
20
50
Collector Current IC (mA)
100
Percentage of Relative to IC = 0.1 mA
Switching Time t (µs)
toff
=0
3
20
VCC = 10.3 V
IC = 10 IB1 = –10 IB2
0.5
E
)
Switching Time vs. Collector Current
1.0
(I
100
50
20
10
5
VCE = 6 V
f = 270 Hz
h
2 h ie
re
1.0 hfe
0.5
hoe
0.2
0.1
0.05
hie
hre
hfe
hie
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2
5 10
Collector Current (mA)
2SC458 (K)
h Parameter vs. Collector to
Emitter Voltage
Percentage of Relative to VCE = 5 V
1.8
IC = 0.1mA
f = 270 Hz
1.6
1.4
hre
hoe
1.2
hoe
1.0
hfe
hie
hfe
hie
hre
0.8
0.5
1.0
2
5
10
20
Collector to Emitter Voltage VCE (V)
7
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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