2SC458(K) Silicon NPN Epitaxial Application • Low frequency amplifier • Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE –100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 30 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 18 V, IE = 0 Emitter cutoff current I EBO — — 1.0 µA VEB = 4 V, IC = 0 100 — 500 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — — 0.4 V I C = 10 mA, IB = 1 mA Base to emitter voltage VBE(sat) — — 1.0 V I C = 10 mA, IB = 1 mA Gain bandwidth product fT 100 — — MHz VCE = 10 V, IC = 10 mA Collector output capacitance Cob — — 4 pF VCB = 10 V, IE = 0, f = 1 MHz Turn on time t on — 80 — ns I C = 10 IB1 = –10 IB2 = 10 mA, VCC = 10 V Turn off time t off — 300 — ns Storage time t stg — 260 — ns Note: 1. The 2SC458 (K) is grouped by hFE as follows. B C D 100 to 200 160 to 320 250 to 500 2 VCE = 1 V, IC = 10 mA I C = IB1 = –IB2 = 20 mA, VCC = 5 V 2SC458 (K) Small Signal h Parameters Item Symbol Typ Unit Test conditions Input impedance hie 16.5 kΩ VCE = 5 V, IC = 0.1 mA, f = 270 Hz Voltage feedback ratio hre 70 × 10 –6 Current transfer ratio hfe 130 Output admittance hoe 11 µS Switching Time Test Circuit tstg Test Circuit Switching Time Test Circuit ton, toff Test Circuit 6k P.G. tr, tf < = 20 ns PW > = 2 µs 0.005 µ 50 –6 V D.U.T 0.5 µ 220 CRT D.U.T 6k 0.005 µ – + 50 µ – + 50 µ CRT 240 1k 10 V Unit R:Ω C:F P.G. tr < = 10 ns PW > = 1 µs Response Waveform 100 200 0.002 µ 7V – + 50 µ 0.002 µ – + 50 µ 5V Unit R:Ω C:F Response Waveform 13 V 0 Input Input 0 10% –9 V 90% Output Output 10% 10% ton tstg toff IC IB1 IB2 VCC VBB Vin 10 mA 1 mA –1 mA 10 V –6 V 13 V IC IB1 IB2 20 mA 20 mA –20 mA VCC VBB Vin 5V 7V –9 V 3 2SC458 (K) Collector Cutoff Current vs. Collector to Base Voltage 100 Collector cutoff current ICBO (nA) Collector power dissipation PC (mW) Maximum Collector Dissipation Curve 250 200 150 100 50 50 100 Ambient Tmperature Ta (°C) 100 10 75 3 1.0 50 0.3 Ta = 25°C 0.1 0 5 10 15 20 25 30 Collector to Base Voltage VCB (V) 150 Typical Output Characteristics (2) Typical Output Characteristics (1) 80 60 2.01.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 40 0.2 20 0.1 mA 2.0 14 Collector Current IC (mA) 100 Collector Current IC (mA) 30 0.03 0 1.8 1.2 0 1.6 0.4 0.8 1.2 2.0 Collector to Emitter Voltage VCE (V) 12 10 8 6 0.8 0.4 IB = 0 4 125 0 4 2 1 µA IB = 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V) 2SC458 (K) DC Current Transfer Ratio vs. Collector Current 1.0 100 50 20 DC Current Transfer Ratio hFE 0.6 10 IC = 5 mA 240 0.8 0.4 0.2 0 0.02 0.05 0.1 0.2 0.5 1.0 2 Base Current IB (mA) 5 10 20 00°C Ta = 1 75 50 25 0 –25 –50 200 160 120 80 0 0.5 1.0 Base to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB 1.0 –25 25 °C Ta = 75 0.8 0.6 0.4 0.2 0 1 2 5 10 20 50 Collector Current IC (mA) 100 VCE = 1 V 40 2 5 10 20 Collector Current IC (mA) 50 100 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Base Current 0.28 0.24 IC = 10 IB 0.20 0.16 0.12 0.08 Ta = 25°C 0.04 –50 0 1 2 5 10 20 50 100 Collector Current IC (mA) 5 2SC458 (K) Input and Output Capacitance vs. Voltage VCE = 10 V 400 0 0.5 1.0 2 5 10 Collector Current IC (mA) 0) 100 6 = 200 f = 1 MHz 7 (I C 300 8 C ib Gain Bandwidth Product fT (MHz) 500 Collector output Capacitance Cob (pF) Emitter Input Capacitance Cib (pF) Gain Bandwidth Product vs. Collector Current 5 C ob 4 2 0.3 1.0 3 10 30 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) h Parameter vs. Collector Current tstg 0.2 0.1 ton 0.05 td 0.02 0.01 1 6 2 5 10 20 50 Collector Current IC (mA) 100 Percentage of Relative to IC = 0.1 mA Switching Time t (µs) toff =0 3 20 VCC = 10.3 V IC = 10 IB1 = –10 IB2 0.5 E ) Switching Time vs. Collector Current 1.0 (I 100 50 20 10 5 VCE = 6 V f = 270 Hz h 2 h ie re 1.0 hfe 0.5 hoe 0.2 0.1 0.05 hie hre hfe hie 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 10 Collector Current (mA) 2SC458 (K) h Parameter vs. Collector to Emitter Voltage Percentage of Relative to VCE = 5 V 1.8 IC = 0.1mA f = 270 Hz 1.6 1.4 hre hoe 1.2 hoe 1.0 hfe hie hfe hie hre 0.8 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) 7 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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