2SC4046 Silicon NPN Epitaxial Application High voltage amplifier Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Collector current IC 0.2 A 8 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C 2SC4046 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 120 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 80 V, IE = 0 250 — 800 1 DC current transfer ratio hFE* Base to emitter voltage VBE — — 1.0 V Collector to emitter saturation voltage VCE(sat) — — 1.0 V I C = 200 mA, IB = 20 mA Gain bandwidth product fT — 350 — MHz VCE = 10 V, IC = 50 mA Collector output capacitance Cob — 3.5 — pF VCB = 30 V, f = 1 MHz, IE = 0 Note: VCE = 5 V, IC = 10 mA 1. The 2SC4046 is grouped by h FE as follows. Grade D E hFE 250 to 500 400 to 800 Area of Safe Operation Maximum Collector Dissipation Curve 1.0 Collector Current IC (A) 6 4 (25 V, 0.4 A) ms 8 =1 Single Pulse Ta = 25°C 10 PW Collector power dissipation Pc (W) 12 (80 V, 0.125 A) DC Operation TC = 25°C 0.1 (80 V, 0.1 A) (120 V, 0.055 A) (120 V, 0.05 A) 2 0.01 0 2 50 100 Case Temperature TC (°C) 150 1 10 100 1,000 Collector to emitter Voltage VCE (V) 2SC4046 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 1,000 100 DC current transfer ratio hFE Collector Current IC (mA) 120 80 100 60 80 60 40 40 20 µA 20 Ta = 75°C VCE = 10 V Pulse Test 4 8 12 18 20 Collector to emitter Voltage VCE (V) 1 10 100 Collector current IC (mA) Ta = –25°C 75 25 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter voltage VBE (V) VCE = 10 V Pulse Test 1.0 1,000 Collector to Emitter Saturation Voltage vs. Collector Current Base to Emitter Voltage vs. Collector Current 10 25 10 IB = 0 0 –25 100 10 IC/IB = 10 Pulse Test 1.0 Ta = 75°C 25 0.1 –25 0.01 0.1 1 10 100 Collector current IC (mA) 1,000 1 10 100 Collector current IC (mA) 1,000 3 2SC4046 Collector Output Capacitance vs. Collector to Base Voltage Gain bandwidth product fT (MHz) 1,000 VCE = 20 V 5 100 10 Pulse Test 10 1 1 4 2 5 10 20 50 Collector current IC (mA) 100 Collector output capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current 100 f = 1 MHz IE = 0 50 20 10 5 2 1 1 2 5 10 20 50 100 Collector to base voltage VCB (V) Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. 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