HITACHI HAT2042

HAT2042T
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-669F (Z)
7th. Edition
February 1999
Features
•
•
•
•
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
TSSOP–8
87
8
D
1
D
4
G
65
12
34
5
G
S S
2 3
MOS1
S S
6 7
MOS2
1, 8
Drain
2, 3, 6, 7 Source
4, 5
Gate
HAT2042T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
28
V
Gate to source voltage
VGSS
± 12
V
Drain current
ID
5.0
A
40
A
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
5.0
A
Pch
Note2
1.0
W
Channel dissipation
Pch
Note3
1.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Channel dissipation
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
28
—
—
V
I D = 10mA, VGS = 0
Gate to source leak current
I GSS
—
—
± 0.1
µA
VGS = ± 12 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
1
µA
VDS = 28 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.4
—
1.4
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
0.027
0.034
Ω
I D = 3 A, VGS = 4 V Note4
resistance
RDS(on)
—
0.037
0.044
Ω
I D = 3 A, VGS = 2.5 V Note4
Forward transfer admittance
|yfs|
7
11
—
S
I D = 3 A, VDS = 10 V Note4
Input capacitance
Ciss
—
510
—
pF
VDS = 10 V
Output capacitance
Coss
—
190
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
140
—
pF
f = 1 MHz
Total gate charge
Qg
—
8.5
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
4.5
—
nc
VGS = 4 V
Gate to drain charge
Qgd
—
4
—
nc
ID = 5 A
Turn-on delay time
t d(on)
—
14
—
ns
VGS = 4 V, ID = 3 A
Rise time
tr
—
120
—
ns
VDD ≅ 10 V
Turn-off delay time
t d(off)
—
85
—
ns
Fall time
tf
—
120
—
ns
Body–drain diode forward voltage
VDF
—
0.85
1.1
V
IF = 5.0 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
t rr
—
40
—
ns
IF = 5.0 A, VGS = 0
diF/ dt = 20 A/ µs
Note:
2
4. Pulse test
HAT2042T
Main Characteristics
Power vs. Temperature Derating
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
Maximum Safe Operation Area
10 µs
30
I D (A)
Pch (W)
2.0
100 µs
10
DC
Drain Current
2
1.0
ive
Dr
1
er
50
at
ion
100
Ambient Temperature
200
Ta (°C)
1
at
ion
0.3
0.1
m
s
=
10
m
s
(P
W
0.03
150
Op
PW
er
1
n
Op
tio
ive
ra
Dr
0.5
0
e
Op
Channel Dissipation
3
Operation in
this area is
limited by R DS(on)
< Note
1
0
s) 5
Ta = 25 °C
1 shot Pulse
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10
4V
1.5 V
6
Drain Current
I D (A)
8
I D (A)
Pulse Test
10V
Drain Current
Typical Transfer Characteristics
10
4
2
8
6
–25°C
4
25°C
2
Tc = 75°C
V DS = 10 V
Pulse Test
VGS = 1.0 V
0
1
2
3
Drain to Source Voltage
4
5
V DS (V)
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
3
HAT2042T
Static Drain to Source on State Resistance
vs. Drain Current
0.20
0.10
ID=5A
0.05
Static Drain to Source on State Resistance
R DS(on) (mΩ )
8
10
80
1A
I D= 5 A
2A
VGS = 2.5 V
40
5, 2, 1 A
4V
Pulse Test
0
–40
0.05
2.5 V
0.02
VGS = 4 V
0.01
0.2
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
100
20
Pulse Test
0.1
0.002
2
4
6
Gate to Source Voltage
60
0.2
0.005
2A
1A
0
4
Drain to Source On State Resistance
R DS(on) ( Ω)
0.15
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.25
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
0.5
1
2
Drain Current
5
10
I D (A)
20
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
20
10
75 °C
5
25 °C
2
1
0.5
0.2
V DS = 10 V
Pulse Test
0.5
1
2
5
Drain Current I D (A)
10
20
HAT2042T
Body–Drain Diode Reverse
Recovery Time
10000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
20
10
5
0.1
5
VGS = 0
f = 1 MHz
3000
1000
Ciss
300
Coss
100
Crss
30
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
0.2
0.5
1
2
Reverse Drain Current
Typical Capacitance vs.
Drain to Source Voltage
10
0
10
10
I DR (A)
30 V
DS
6
20
10
0
4
V DD = 25 V
10 V
5V
4
8
12
16
Gate Charge Qg (nc)
2
0
20
1000
500
Switching Time t (ns)
V GS
V GS (V)
8
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
I D = 5.0 A
V DD = 5 V
10 V
25 V
40
50
Switching Characteristics
10
40
30
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
20
V GS = 4 V, V DD = 10 V
PW = 3 µs, duty < 1 %
200
t d(off)
100
50
tf
tr
20
10
0.1
t d(on)
0.2
0.5
1
Drain Current
2
5
I D (A)
10
5
HAT2042T
Reverse Drain Current vs.
Souece to Drain Voltage
10
Reverse Drain Current I DR (A)
Pulse Test
8
6
5V
4
V GS = 0 V
2
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
HAT2042T
Normalized Transient Thermal Impedance vs. Pulse Width ( 1 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
e
uls
0.001
p
ot
PDM
sh
1
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width ( 2 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 210 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.001
0.0001
10 µ
ot
PDM
e
uls
D=
p
h
1s
100 µ
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
100
1000
10000
7
HAT2042T
Package Dimensions
Unit: mm
1
4
0.65
0.10
0.22
+0.08
–0.07
0.13 M
0.17 ± 0.05
6.40 ± 0.20
0.07 +0.03
–0.04
5
1.10 Max
8
4.40 ± 0.1
3.00 ± 0.1
0–8°
0.50 ± 0.10
Hitachi code
EIAJ
JEDEC
8
TTP–8D
—
—
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contact Hitachi’s sales office before using the product in an application that demands especially high
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