HITACHI HAT2038R

HAT2038R/HAT2038RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-666C (Z)
4th. Edition
February 1999
Features
•
•
•
•
For Automotive Application ( at Type Code “J “)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
SOP–8
8
5
7 6
3
1 2
4
5 6
D D
7 8
D D
4
G
2
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
HAT2038R/HAT2038RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
± 20
V
Drain current
ID
5
A
40
A
5
A
—
—
5
A
—
—
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Avalanche current
HAT2038R
I AP
Note1
Note4
HAT2038RJ
Avalanche energy
HAT2038R
EAR
Note4
HAT2038RJ
2.14
mJ
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Channel dissipation
Note:
2
1.
2.
3.
4.
PW ≤ 10µs, duty cycle ≤ 1 %
1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Value at Tch=25°C, Rg≥50Ω
HAT2038R/HAT2038RJ
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
± 20
—
—
V
I G = ± 100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
± 10
µA
VGS = ± 16 V, VDS = 0
Zero gate voltage
HAT2038R
I DSS
—
—
1
µA
VDS = 60 V, VGS = 0
drain current
HAT2038RJ
I DSS
—
—
0.1
µA
Zero gate voltage
HAT2038R
I DSS
—
—
—
µA
VDS = 48 V, VGS = 0
drain current
HAT2038RJ
I DSS
—
—
10
µA
Ta = 125°C
Gate to source cutoff voltage
VGS(off)
1.2
—
2.2
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
0.043 0.058 Ω
I D = 3 A, VGS = 10 V Note5
resistance
RDS(on)
—
0.056 0.084 Ω
I D = 3 A, VGS = 4 V Note5
Forward transfer admittance
|yfs|
6
9
—
S
I D = 3 A, VDS = 10 V Note5
Input capacitance
Ciss
—
520
—
pF
VDS = 10 V
Output capacitance
Coss
—
270
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
100
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
11
—
ns
VGS =10 V, ID = 3 A
Rise time
tr
—
40
—
ns
VDD ≅ 30 V
Turn-off delay time
t d(off)
—
110
—
ns
Fall time
tf
—
80
—
ns
Body–drain diode forward voltage
VDF
—
0.84
1.1
V
IF = 5 A, VGS = 0 Note5
Body–drain diode reverse
recovery time
t rr
—
40
—
ns
IF = 5 A, VGS = 0
diF/ dt = 50 A/µs
Note:
5. Pulse test
3
HAT2038R/HAT2038RJ
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
10 µs
I D (A)
ive
Dr
2.0
Op
er
ion
ive
at
0
Dr
er
1.0
Op
1
50
30
at
ion
150
Ambient Temperature
200
Ta (°C)
1
Op
10
s
ms
(1
sh
ot
at
)
s)
Ta = 25 °C
1 shot pulse
0.01
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
10
Pulse Test
4
2.5 V
2
(A)
3V
V DS = 10 V
Pulse Test
ID
10 V
4V
3.5 V
Drain Current
I D (A)
Drain Current
DC
=
µs
m
ion
0.3 Operation in
(P
this area is
W N
< ote
0.1 limited by R DS(on)
10 5
Typical Output Characteristics
6
PW
1
er
10
8
0
3
0.03
100
10
10
Drain Current
3.0
2
Channel Dissipation
Pch (W)
4.0
8
6
25°C
4
Tc = 75°C
–25°C
2
VGS = 2 V
0
4
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
4
5
V GS (V)
HAT2038R/HAT2038RJ
0.4
0.3
ID=5A
0.2
2A
1A
12
4
8
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
1, 2 A
0.12
ID=5A
0.08
V GS = 4 V
1, 2, 5 A
0.04
10 V
0
–40
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
VGS = 4 V
0.05
0.1
0
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
10 V
0.02
0.01
0.1
0.3
1
3
Drain Current
10
30
I D (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
20
V DS = 10 V
Pulse Test
Tc = –25 °C
10
5
25 °C
75 °C
2
1
0.5
0.1
0.2
1
2
5
0.5
Drain Current I D (A)
10
5
HAT2038R/HAT2038RJ
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
2000
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
200
1000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
20
10
50
Crss
0
16
V GS
40
20
0
V DS
12
V DD = 10 V
25 V
50 V
V DD = 50 V
25 V
10 V
8
16
24
32
Gate Charge Qg (nc)
8
4
0
40
1000
20
30
40
50
Switching Characteristics
300
Switching Time t (ns)
I D = 5A
10
Drain to Source Voltage V DS (V)
V GS (V)
20
80
60
VGS = 0
f = 1 MHz
10
Gate to Source Voltage
V DS (V)
Coss
100
0.2
0.5
1
2
5
10
Reverse Drain Current I DR (A)
Dynamic Input Characteristics
100
Drain to Source Voltage
200
20
5
0.1
6
Ciss
500
t d(off)
100
tf
30
tr
t d(on)
10
3
1
0.1
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
0.2
1
0.5
Drain Current
5
2
I D (A)
10
HAT2038R/HAT2038RJ
Maximun Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
Repetive Avalanche Energy E AR (mJ)
Reverse Drain Current I DR (A)
10
10 V
8
5V
6
V GS = 0, –5 V
4
2
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
2.5
I AP = 5 A
V DD = 25 V
L = 100 µH
duty < 0.1 %
Rg > 50 Ω
2.0
1.5
1.0
0.5
0
25
50
V SD (V)
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
V DS
Monitor
75
1
2
• L • I AP •
2
VDSS
VDSS – V DD
I AP
Monitor
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
HAT2038R/HAT2038RJ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.1
0.05
0.2
0.02
0.01
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 125 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.01
lse
t
ho
0.001
pu
PDM
1s
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance
γ s (t)
10
1
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D=1
0.5
0.2
0.1
0.01
0.1
0.05
0.02
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.01
e
uls
0.001
PDM
p
ot
D=
h
1s
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (S)
8
10
100
1000
10000
HAT2038R/HAT2038RJ
Package Dimensions
Unit: mm
1
4
6.2 Max
0.25 Max
5
1.75 Max
8
4.0 Max
5.0 Max
0 – 8°
0.51 Max
0.25 Max
1.27
1.27 Max
0.15
0.25 M
Hitachi code
EIAJ
JEDEC
FP–8DA
—
MS-012AA
9
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.