HAT2058R/HAT2058RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-934 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 4 5 6 D D 7 8 D D 4 G 2 G S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain HAT2058R/HAT2058RJ Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol HAT2058R HAT2058RJ Unit Drain to source voltage VDSS 100 100 V Gate to source voltage VGSS ±20 ±20 V Drain current ID 4 4 A 32 32 A 4 4 A — 4 A Drain peak current I D (pulse) Body-drain diode reverse drain current I DR Avalanche current I AP Avalanche energy Channel dissipation Note4 EAR Note4 Note1 — 1.6 mJ Pch Note2 2 2 W Pch Note3 3 3 W Channel temperature Tch 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Notes: 1. 2. 3. 4. 2 PW ≤ 10 µs, duty cycle ≤ 1% 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω HAT2058R/HAT2058RJ Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 100 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Zero gate voltage HAT2058R I DSS — — 1 µA VDS = 100 V, VGS = 0 drain current HAT2058RJ I DSS — — 0.1 µA Zero gate voltage HAT2058R I DSS — — — µA VDS = 80 V, VGS = 0 drain current HAT2058RJ I DSS — — 10 µA Ta = 125°C Gate to source cutoff voltage I GSS — — ±10 µA VGS = ±16 V, V DS = 0 Static drain to source on state resistance VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 3 5 — S I D = 2 A*1, VDS = 10 V Static drain to source on state RDS(on) — 120 145 mΩ I D = 2 A*1, VGS = 10 V resistance RDS(on) — 150 180 mΩ I D = 2 A*1, VGS = 4 V Input capacitance Ciss — 420 — pF VDS = 10 V, VGS = 0 Output capacitance Coss — 180 — pF f = 1 MHz Reverse transfer capacitance Crss — 100 — pF Turn-on delay time td(on) — 10 — ns VGS = 10 V, ID = 2 A Rise time tr — 30 — ns VDD ≅ 30 V Turn-off delay time td(off) — 110 — ns Fall time tf — 60 — ns Body-drain diode forward voltage VDF — 0.85 1.1 V I F = 4 A, VGS = 0*1 Body-drain diode reverse recovery time — 75 — ns I F = 4 A, VGS = 0 diF/dt = 50 A/µs Note: trr 1. Pulse test 3 HAT2058R/HAT2058RJ Main Characteristics Power vs. Temperature Derating Test condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW < 10 s 100 ID (A) 3.0 er n Op tio ra ive pe Dr 1.0 0 50 0µ 10 Drain Current O 1 10 µs 10 DC 3 ive Dr 2.0 Maximum Safe Operation Area 30 2 Channel Dissipation Pch (W) 4.0 at ion 100 150 Ambient Temperature Op er 1 Operation in 0.3 this area is 0.1 PW = ati on Ta (°C) m s 10 ms (P No W te < limited by RDS(on) Ta = 25°C 0.03 1 shot Pulse 1 Drive Operation 0.01 0.1 0.3 1 3 10 Drain to Source Voltage 200 s 1 10 5 s) 30 100 VDS (V) Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 20 10 Pulse Test 6V 4.0 V 12 Drain Current Drain Current ID (A) 16 V DS = 10 V ID (A) 10 V 8 4 8 6 4 2 Tc = 75°C V GS = 2.0 V 0 4 2 4 6 Drain to Source Voltage 8 10 VDS (V) Pulse Test 0 25°C -25°C 1 2 3 Gate to Source Voltage 4 5 VGS (V) HAT2058R/HAT2058RJ Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (V) 1 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 0.6 ID=4A 0.5 0.2 VGS = 4 V 0.1 10 V 0.05 0.4 2A 0.2 0.02 1A Pulse Test 0.01 12 4 8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 4A I D =1, 2 A 0.3 0.2 V GS = 4 V 4A 1, 2A 0.1 10 V 0 -40 0.1 0.2 16 20 VGS (V) 0 40 80 120 Case Temperature Tc (°C) 160 0.5 1 2 5 50 10 20 50 ID (A) Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Surce on State Resistance RDS(on) (Ω) 0 Forward Transfer Admittance vs. Drain Current 20 Tc = -25°C 10 25°C 5 75°C 2 V DS = 10 V Pulse Test 1 0.5 0.1 0.3 1 3 Drain Current 10 30 100 ID (A) 5 HAT2058R/HAT2058RJ Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 5000 di / dt = 50 A / µs V GS = 0, Ta = 25°C 500 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 1000 Ciss 500 200 Coss 100 50 20 Crss VGS = 0 f = 1 MHz 20 10 0.1 10 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 10 20 30 Drain to Source Voltage Dynamic Input Characteristics V GS 12 V DS 80 8 40 0 4 VDD = 80V 50V 25V 8 16 Gate Charge 6 16 V DD = 80 V 50 V 25 V 24 32 Qg (nc) 0 40 1000 300 Switching Time t (ns) 120 ID=4A Switching Characteristics VGS (V) 160 20 Gate t o Source Voltage Drain to Source Voltage VDS (V) 200 40 50 VDS (V) t d(off) 100 tf 30 tr 10 3 1 0.1 t d(on) V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 10 30 Drain Current ID (A) 100 HAT2058R/HAT2058RJ Reverse Drain Current vs. Source to Drain Voltage EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Pulse Test 8 Repetive Avalanche Energy Reverse Drain Current IDR (A) 10 6 10 V 4 5V V GS = 0, -5 V 2 0 0.4 0.8 1.2 Source to Drain Voltage 2.5 I AP = 4 A V DD = 50 V L = 100 µH duty < 0.1 % Rg > 50 Ω 2.0 1.5 1.0 0.5 1.6 2.0 VSD (V) 0 25 50 75 100 Channel Temperature Avalanche Test Circuit Avalanche Waveform 1 2 • L • IAP • 2 EAR = L V DS Monitor 125 150 Tch (°C) VDSS VDSS — VDD I AP Monitor V (BR)DSS I AP Rg V DS VDD D. U. T ID Vin 15 V 50Ω 0 VDD Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 10 V 50Ω V DD = 30 V 10% 10% 90% td(on) tr 10% 90% td(off) tf 7 HAT2058R/HAT2058RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 θ ch-f(t) =γ s (t)• θ ch - f θ ch-f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.01 e uls p ot PDM h 0.001 1s D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m Pulse Width 1 10 100 1000 10000 PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.2 0.1 0.01 0.1 0.05 θ ch-f(t) = γ s (t) • θch - f θ ch-f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.02 0.01 e uls 0.001 PDM p ot D= h 1s PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m Pulse Width 8 1 PW (S) 10 100 1000 10000 HAT2058R/HAT2058RJ Package Dimensions Unit: mm 2 4 0.15max. 1.27max. 0.4min. 5 6.2max. 5.8min. 4.0max. 3.8min. 8 0~8° 5.0max. 4.8min. 7 6 0.25max. 0.19min. 1.75max. 1.35min. 0.75max. 1.27typ. 3 0.51max. 0.33min. 0.15 0.25max. 0.10min. Pin No. 1 0.25 M Hitachi Code JEDEC EIAJ FP-8DA — — 9 HAT2058R/HAT2058RJ Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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