ETC HAT2068R

HAT2068R
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1225C (Z)
4th. Edition
Aug. 2002
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 7 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8
5 6 7 8
D D D D
4
G
5
7 6
3
1 2
4
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
HAT2068R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
± 20
V
Drain current
ID
14
A
112
A
14
A
2.5
W
50
°C/W
Note1
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Channel dissipation
Pch
Channel to Ambient Thermal
Impedance
θch-a
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note2
Note2
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Rev.3, Aug. 2002, page 2 of 10
HAT2068R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
± 20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
± 10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
7
9
mΩ
ID = 7 A, VGS = 10 V
Note3
resistance
RDS(on)
—
11
16
mΩ
ID = 7 A,VGS = 4.5 V
Note3
Forward transfer admittance
|yfs|
16
28
—
S
ID = 7 A, VDS=10 V
Note3
Input capacitance
Ciss
—
1650
—
pF
VDS = 10 V
Output capacitance
Coss
—
400
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
220
—
pF
f = 1 MHz
Total gate charge
Qg
—
26
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
5
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
5
—
nc
ID = 14 A
Turn-on delay time
td(on)
—
15
—
ns
VGS = 10 V, ID = 7 A
Rise time
tr
—
30
—
ns
VDD ≅ 10 V
Turn-off delay time
td(off)
—
50
—
ns
RL = 1.43 Ω
Fall time
tf
—
10
—
ns
Rg = 4.7 Ω
Body–drain diode forward voltage
VDF
—
0.80
1.10
V
IF = 14 A, VGS = 0
—
50
—
ns
IF = 14 A, VGS = 0
diF/ dt = 50 A/ µs
Body–drain diode reverse recovery trr
time
Note3
Notes: 3. Pulse test
Rev.3, Aug. 2002, page 3 of 10
HAT2068R
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
I D (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
10 µs
100
10
10
Drain Current
Channel Dissipation
Pch (W)
4.0
DC
PW
Op
era
s
s
=1
0m
tio
1
0µ
1m
s
n(
Operation in
this area is
0.1 limited by R DS(on)
PW
< 1Note
0s 4
)
Ta = 25°C
1 shot Pulse
0
50
100
Ambient Temperature
150
200
Ta (°C)
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
Typical Transfer Characteristics
50
50
4V
ID
3.5 V
30
20
VGS = 3 V
10
0
V DS = 10 V
Pulse Test
(A)
40
Pulse Test
Drain Current
Drain Current
I D (A)
10 V
4.5 V
2
4
6
Drain to Source Voltage
Rev.3, Aug. 2002, page 4 of 10
8
V DS (V)
10
40
30
20
Tc = 75°C
-25°C
10
0
25°C
1
2
3
Gate to Source Voltage
5
4
V GS (V)
HAT2068R
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
0.16
0.08
I D = 10 A
0.04
5A
2A
Static Drain to Source on State Resistance
R DS(on) (m Ω)
0
4
8
12
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
I D = 2 A, 5 A
20
10 A
V GS = 4.5 V
10
2 A, 5 A, 10 A
0
-40
Drain to Source On State Resistance
R DS(on) (m Ω)
0.12
Pulse Test
10 V
0
40
80
120
160
Case Temperature Tc (˚C)
20
VGS = 4.5 V
10
10 V
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.20
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
Tc = -25°C
30
10
75°C
25°C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current I D (A)
Rev.3, Aug. 2002, page 5 of 10
HAT2068R
Body−Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
3000
Ciss
1000
100
Crss
30
di/dt = 50 A/µs
VGS = 0, Ta = 25°C
10
0.1 0.2
0.5 1
2
Reverse Drain Current
Coss
300
VGS = 0
f = 1 MHz
10
5 10 20
I DR (A)
0
10
V DD = 25 V
10 V
5V
V DS
20
8
10
0
12
V DD = 25 V
10 V
5V
20
40
60
80
Gate Charge Qg (nc)
Rev.3, Aug. 2002, page 6 of 10
4
0
100
V GS (V)
16
100
Switching Time t (ns)
30
50
Switching Characteristics
V GS
40
40
200
20
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
I D = 14 A
30
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
20
t d(off)
50
tf
tr
20 t d(on)
10
5
V GS = 10 V , VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
2
0.1 0.2
0.5 1
2
Drain Current
5 10
I D (A)
20
HAT2068R
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
50
10 V
40
30
V GS = 0
5V
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.01
0.001
0.2
0.1
0.05
θ ch - f(t) = γ s (t) x θ ch - f
θ ch - f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
0.02
0.01
e
uls
p
ot
PDM
h
1s
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Rev.3, Aug. 2002, page 7 of 10
HAT2068R
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.3, Aug. 2002, page 8 of 10
tr
10%
90%
td(off)
tf
HAT2068R
Package Dimensions
As of January, 2002
Unit: mm
3.95
4.90
5.3 Max
5
8
*0.22 ± 0.03
0.20 ± 0.03
4
1.75 Max
1
0.75 Max
+ 0.10
6.10 – 0.30
1.08
0.14 – 0.04
*0.42 ± 0.08
0.40 ± 0.06
+ 0.11
0˚ – 8˚
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Hitachi Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
Rev.3, Aug. 2002, page 9 of 10
HAT2068R
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.3, Aug. 2002, page 10 of 10