HAT2060R/HAT2060RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-936 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting “J” Is for Automotive application High temperature D-S leakage guarantee Avalanche rating External View SOP-8 8 5 6 7 8 D D D D 5 7 6 3 1 2 4 4 G S S S 1 2 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain HAT2060R/HAT2060RJ Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol HAT2060R HAT2060RJ Unit Drain to source voltage VDSS 200 200 V Gate to source voltage VGSS ±20 ±20 V Drain current ID 2 2 A 16 16 A 2 2 A — 4 A Drain peak current I D (pulse) Body-drain diode reverse drain current I DR Avalanche current I AP Avalanche energy Channel dissipation Note4 EAR Note4 Note1 — 0.266 mJ Pch Note2 2 2 W Pch Note3 3 3 W Channel temperature Tch 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Notes: 1. 2. 3. 4. 2 PW ≤ 10 µs, duty cycle ≤ 1% 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Value Tch = 25°C, Rg ≥ 50 Ω HAT2060R/HAT2060RJ Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 200 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Zero gate voltage HAT2060R I DSS — — 1 µA VDS = 200 V, VGS = 0 drain current HAT2060RJ I DSS — — 0.1 µA Zero gate voltage HAT2060R I DSS — — — µA VDS = 160 V, VGS = 0 drain current HAT2060RJ I DSS — — 10 µA Ta = 125°C Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 2 3.2 — S I D = 1 A Note1, VDS = 10 V Stataic drain to source on state RDS(on) — 410 450 mΩ I D = 1 A Note1, VGS = 10 V resistance RDS(on) — 450 550 mΩ I D = 1 A Note1, VGS = 4 V Input capacitance Ciss — 380 — pF VDS = 10 V, VGS = 0 Output capacitance Coss — 125 — pF f = 1 MHz Reverse transfer capacitance Crss — 75 — pF Turn-on delay time td(on) — 10 — ns VGS = 10 V, ID = 1 A Rise time tr — 17 — ns VDD ≅ 30 V Turn-off delay time td(off) — 110 — ns Fall time tf — 45 — ns Body-ddrain diode forward voltage VDF — 0.82 1.07 V I F = 2 A, VGS = 0*1 Body-drain diode reverse recovery trr time — 95 — ns I F = 2 A, VGS = 0 diF/dt = 50 A/µs Note: 1. Pulse test 3 HAT2060R/HAT2060RJ Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area Test conditions : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW < 10 s 3.0 ID (A) 30 10 Drain Current Pch (W) 4.0 1 10 µs 10 3 Dr er n Op tio ra ive pe 1 O 2.0 ive Dr Channel Dissipation 2 DC 1.0 0 50 at ion 0.3 0.1 PW Op er Operation in this area is limited by RDS(on) 1 s = 10 ati on 0µ s m ms (P No W te < 5 10 s) 0.03 Ta = 25°C 1 shot Pulse 0.01 1 Drive Operation 100 150 Ambient Temperature 200 0.3 1 3 10 30 100 Drain to Source Voltage Ta (°C) VDS (V) Note 5: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics 5 5 10 V Pulse Test 3 2 1 2.5 V ID (A) 3.0 V Drain Current Drain Current ID (A) 4V 4 4 V DS = 10 V Pulse Test 3 2 1 Tc = 75°C VGS = 2.0 V 0 4 2 4 6 8 10 Drain to Source Voltage VDS (V) 0 25°C -25°C 1 2 3 Gate to Source Voltage 4 5 VGS (V) HAT2060R/HAT2060RJ Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (V) 2 Pulse Test 1.6 1.2 ID=2A 0.8 1A 0.4 0.5 A Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 Pulse Test 0.01 12 4 8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 0.5 A 1A 2A 1.2 0.8 V GS = 4 V 2A 1A 0.5 A 0.4 0 -40 10 V 0 40 80 Case Temperature 0.1 0.2 16 20 VGS (V) 120 160 Tc (°C) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) 0 5 10 20 0.5 1 2 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 50 20 Tc = -25°C 10 25°C 5 75°C 2 V DS = 10 V Pulse Test 1 0.5 0.1 0.3 1 3 Drain Current 10 30 100 ID (A) 5 HAT2060R/HAT2060RJ Body -Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 di / dt = 50 A / µs V GS = 0, Ta = 25°C 500 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 1000 Ciss 500 200 Coss 100 50 20 10 0.1 10 0.3 1 3 10 Reverse Drain Current 30 0 100 IDR (A) 10 20 30 Drain to Source Voltage Dynamic Input Characteristics 200 100 0 6 16 V GS V DS 12 8 V DD = 150V 100V 80V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 300 Switching Time t (ns) 300 V DD = 150 V 100 V 80 V 1000 VGS (V) 400 ID=2A 40 50 VDS (V) Switching Characteristics 20 Gate to Source Voltage Drain to Source Voltage VDS (V) 500 Crss VGS = 0 f = 1 MHz 20 t d(off) 100 tf 30 tr 10 3 1 0.1 t d(on) V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 10 30 Drain Current ID (A) 100 HAT2060R/HAT2060RJ EAR (mJ) Pulse Test 4 Repetive Avalanche Energy Reverse Drain Current IDR (A) 5 Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage 3 2 V GS = 0, -5 V 10 V 1 0 5V 0.4 0.8 1.2 1.6 Source to Drain Voltage 0.5 I AP = 2 A V DD = 50 V L = 100 µH duty < 0.1 % Rg > 50 Ω 0.4 0.3 0.2 0.1 0 25 2.0 50 100 125 Channel Temperature VSD (V) Avalanche Test Circuit 150 Tch (°C) Avalanche Waveform EAR = L V DS Monitor 75 1 2 • L • IAP • 2 VDSS VDSS — VDD I AP Monitor V (BR)DSS I AP Rg V DS VDD D. U. T ID Vin 15 V 50Ω 0 VDD Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 10 V 50Ω V DD = 30 V 10% 10% 90% td(on) tr 10% 90% td(off) tf 7 HAT2060R/HAT2060RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 θ ch-f(t) = γ s (t) • θch - f θ ch-f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.02 0.01 0.01 e uls p ot PDM h 0.001 1s D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m Pulse Width 1 10 100 1000 10000 PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 θ ch-f(t) = γ s (t) • θch - f θ ch-f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.02 0.01 0.01 e uls 0.001 0.0001 10 µ PDM p ot h 1s PW T PW T 100 µ 1m 10 m 100 m Pulse Width 8 D= 1 PW (S) 10 100 1000 10000 HAT2060R/HAT2060RJ Package Dimensions Unit: mm 2 4 0.15max. 1.27max. 0.4min. 5 6.2max. 5.8min. 4.0max. 3.8min. 8 0~8° 5.0max. 4.8min. 7 6 0.25max. 0.19min. 1.75max. 1.35min. 0.75max. 1.27typ. 3 0.51max. 0.33min. 0.15 0.25max. 0.10min. Pin No. 1 0.25 M Hitachi Code JEDEC EIAJ FP-8DA — — 9 HAT2060R/HAT2060RJ Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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