Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description Features The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. • Broadband internal matching • Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% • Typical CW performance - Output power at P–1dB = 90 W - Gain = 17 dB - Efficiency = 60% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power Typical EDGE Modulation Spectrum Performance Mod Spectrum vs. Output Power VDD = 28 V, IDQ = 550 mA, f = 959.8 MHz 50 -20 45 -30 40 -40 35 -50 30 400KHz -60 25 20 -70 15 600KHz -80 Efficiency (%) Modulation Spectrum (dB) Efficiency PTF080601A Package 20248 10 -90 5 32 34 36 38 40 42 44 PTF080601E Package 30248 46 Output Power (dBm) PTF080601F Package 31248 RF Characteristics at TCASE = 25°C unless otherwise indicated Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, fC = 960 MHz, tone spacing = 1000 kHz Characteristic Symbol Min Typ Max Units Gps — 18 — dB Drain Efficiency ηD — 42 — % Intermodulation Distortion IMD — –32 — dBc Gain EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, P OUT = 30 W, f = 959.8 MHz Characteristic Symbol Min Typ Max Units EVM (RMS) — 2.0 — % Modulation Spectrum @ 400 KHz ACPR — –61 — dBc Modulation Spectrum @ 600 KHz ACPR — –74 — dBc Gps — 18 — dB ηD — 40 — % Error Vector Magnitude Gain Drain Efficiency Developmental Data Sheet 1 2003-12-05 Developmental PTF080601 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS — 65 — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — 1.0 — µA On-State Resistance VGS = 10 V, IDS = 1 A RDS(on) — 0.1 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 550 mA VGS — 3.2 — V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PTF080601A PD 180 W 1.03 W/°C 195 W 1.11 W/°C TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) PTF080601A RθJC 0.972 °C/W PTF080601E RθJC 0.897 °C/W Above 25°C derate by Total Device Dissipation PTF080601E PD Above 25°C derate by Storage Temperature Range Developmental Data Sheet 2 2003-12-05 Developmental PTF080601 Type PTF080601A PTF080601E PTF080601F Package Outline 20248 30248 31249 Package Description Standard ceramic, flange Thermally enhanced, flange Thermally enhanced, no flange Marking PTF080601A PTF080601E PTF080601F Package Outline Specifications Package 20248 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Developmental Data Sheet 3 2003-12-05 Developmental PTF080601 Package Outline Specifications Package 30248 (45° X 2.72 [.107]) C L 2X 4.83±0.51 [.190±.020] D S 9.78 [.385] 19.43 ±0.51 [.765±.020] +0.10 LID 9.40 -0.15 C L [.370 +.004 ] -.006 G 2X 12.70 [.500] 2X R1.63 [.064] 4X R1.52 [.060] 27.94 [1.100] 1.02 [.040] 19.81±0.20 [.780±.008] SPH 1.57 [.062] 3.76±0.38 [.140±.015] 0.025 [.001] -A- 34.04 [1.340] 0.51 [.020] ERA-H-30248 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10± 0.051/0.025 [.004±.002/.001] 5. Lids are toleranced with reference to leads. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Developmental Data Sheet 4 2003-12-05 Developmental PTF080601 Package Outline Specifications Package 31248 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10± 0.051/0.025 [.004±.002/.001] 5. Lids are toleranced with reference to leads. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Developmental Data Sheet 5 2003-12-05 PTF080601 Revision History: 2003-12-05 Previous Version: none Page Subjects (major changes since last revision) Developmental We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International Edition 2003-12-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6