FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power Trench® BGA MOSFET -20V, -6.5A, 28mΩ Features General Description Max rDS(on) = 28mΩ at VGS = -4.5V, ID = -6.5A Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and rDS(on). This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low rDS(on). Max rDS(on) = 45mΩ at VGS = -2.5V, ID = -5A Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 Ultra-thin package: less than 0.80 mm height when mounted to PCB Outstanding thermal transfer characteristics: significantly better than SO-8 Applications Battery management Ultra-low Qg x rDS(on) figure-of-merit Load Switch High power and current handling capability Battery protection RoHS Compliant S G Q1 D Q2 G S Top Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Ratings -20 Units V ±12 V -6.5 -20 PD Power Dissipation (Steady State) TJ, TSTG Operating and Storage Junction Temperature Range (Note 1a) A 2.1 W -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1a) (Note 1) 0.6 60 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 108 RθJB Thermal Resistance, Junction to Ball (Note 1) 6.3 °C/W Package Marking and Ordering Information Device Marking 2554P Device FDZ2554P ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev B Package BGA 2.5X4.0 1 Reel Size 7’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power PowerTrench® BGA MOSFET June 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient -20 V ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V -1 µA IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±100 nA -1.5 V -13 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 3 VGS = -4.5V, ID = -6.5A 21 28 VGS = -2.5V, ID = -5A 36 45 VGS = -4.5V, ID = -6.5A, TJ = 125°C 30 43 VDD = -5V, ID = -6.5A 24 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.6 -0.8 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz VGS = 15mV, f = 1MHz 1430 1900 pF 319 425 pF 164 245 pF Ω 9.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time 12 22 ns 9 18 td(off) Turn-Off Delay Time ns 62 100 tf ns Fall Time 37 60 ns Qg Total Gate Charge 14 20 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -10V, ID =-1A, VGS = -4.5V, RGEN = 6Ω VGS = -4.5V , VDD =-10V ID = -6.5A 3 nC 4 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -1.75A -1.75 (Note 2) IF = -6.5A, di/dt = 100A/µs A -0.7 -1.2 V 25 40 ns 20 32 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 108 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 2 www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET Electrical Characteristics TJ= 25°C unless otherwise noted 2.2 VGS = - 4.5V VGS = -4V VGS = - 3.5V 15 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID,DRAIN CURRENT (A) 20 VGS = -2.5V VGS = -2V 10 5 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 0 0.0 1.8 1.6 VGS = -3.5V 1.2 VGS = -4V 1.0 VGS = -4.5V 0.8 0 0.5 1.0 1.5 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 10 -ID, DRAIN CURRENT(A) 15 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 90 1.4 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -2.5V 1.4 Figure 1. On-Region Characteristics ID = -6.5A VGS = -4.5V 1.3 1.2 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 Figure 3. Normalized On- Resistance vs Junction Temperature 60 50 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 10 VDD = -5V TJ =125oC TJ = 25oC 5 TJ = -55oC 0 0.5 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev B TJ = 125oC 40 30 20 TJ = 25oC 2.0 2.5 3.0 3.5 4.0 -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 Figure 4. On-Resistance vs Gate to Source Voltage 20 15 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 70 10 1.5 150 ID = -3.2A 80 TJ, JUNCTION TEMPERATURE (oC) -ID, DRAIN CURRENT (A) PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VGS = -2V 2.0 100 VGS = 0V 10 TJ= 125oC 1 0.1 TJ = 25oC 0.01 1E-3 TJ = -55oC 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 2000 ID = -6.5A Ciss 4 3 CAPACITANCE (pF) VDD = -5V VDD = -10V 2 VDD = -15V 1 4 8 12 Coss 100 16 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 1ms 10ms 1 100ms SINGLE PULSE TJ = MAX RATE 1s o RθJA = 108 C/W 0.1 TA = 25oC 10s DC THIS AREA IS LIMITED BY rDS(ON) 0.01 0.1 1 10 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 100 3000 VGS = -4.5V 1000 Figure 9. Forward Bias Safe Operating Area NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 SINGLE PULSE o RθJA = 108 C/W o TA = 25 C 100 10 1 0.5 -3 10 -2 -1 10 0 1 10 10 10 t, PULSE WIDTH (s) -VDS, DRAIN to SOURCE VOLTAGE (V) 2 1 20 Figure 8. Capacitance vs Drain to Source Voltage 100 10 Crss f = 1MHz VGS = 0V 30 0.1 0 0 1000 2 10 3 10 Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 1E-3 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 4 www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I29 ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 6 www.fairchildsemi.com FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET tm