SSD2008A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS(ON) S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 ! Low Input Capacitance ! Extended Safe Operating Area D1 D1 Top View D2 D2 ! Improved High Temperature Reliability G2 ▲ ◀ ◀ G1 ▲ Product Summary SSD2008 BVDSS RDS(on) ID N-Channel 30V 0.05Ω 3.5A P-Channel -30V 0.10Ω -3.5A S1 S2 N & P-Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID N-Channel P-Channel Units Drain-to-Source Voltage Characteristic 30 -30 V Continuous Drain Current TA=25℃ 3.5 -3.5 Continuous Drain Current TA=70℃ 2.8 -2.8 14.0 -14.0 A ±20 V IDM Drain Current-Pulsed VGS Gate-to-Source Voltage PD TJ , TSTG ① ±20 A Total Power Dissipation ( TA=25℃ ) 2.0 ( TA=70℃ ) 1.3 W - 55 to +150 ℃ Operating and Junction Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units RθJA Junction-to-Ambient -- 62.5 ℃/W Rev. A1 Dual P-CHANNEL POWER MOSFET SSD2008A ( N-Channel ) Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IDSS IDON RDS(on) gfs td(on) tr td(off) tf Qg Min. Typ. Max. Units 30 -- -- Test Condition V VGS=0V,ID=250μA 1.0 -- -- V VDS= 5V ,ID=250μA Gate-Source Leakage , Forward -- -- 100 nA VGS=20V Gate-Source Leakage , Reverse -- -- -100 nA VGS=-20V -- -- 1.0 -- -- 5.0 14 -- -- Gate Threshold Voltage Drain-to-Source Leakage Current On-State Drain-Source Current μA A On-State Resistance ② -- 0.031 0.05 -- 0.042 0.08 Ω Forward Transconductance ② S Static Drain-Source -- 8.0 -- Turn-On Delay Time -- 16 30 Rise Time -- 18 40 Turn-Off Delay Time -- 38 50 Fall Time -- 24 50 Total Gate Charge -- 18 35 Qgs Gate-Source Charge -- 3.5 -- Qgd Gate-Drain (“Miller”) Charge -- 3.5 -- ns VDS=24V VDS=15V,TC=70℃ VDS=5V ,VGS=10V VGS=10V,ID=3.5A VGS=4.5V,ID=2.5A VDS =15V,ID=3.5A VDD=10V,ID=1.0A, R0=6.0Ω, ②③ nC VDS=10V,VGS=10V, ②③ ID=3.5A Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Continuous Source Current IS (Body Diode) Test Condition Modified MOSFET Symbol -- -- 1.7 A Showing the Integral Reverse P-N Junction Rectifier ○D │ ││ ─▲── │││◀─ │ ─┘││─│ ○ G │ ○S VSD Diode Forward Voltage ② -- -- 1.2 V TA=25℃,IS=1.7A,VGS=0V trr Reverse Recovery Time ② -- 70 120 ns TA=25℃,IF=3.5A,diF/dt=100A/μs Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ③ Essentially Independent of Operating Temperature Dual P-CHANNEL POWER MOSFET SSD2008A ( P-Channel ) Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage -30 -- -- V VGS=0V,ID=-250μA VGS(th) Gate Threshold Voltage -1.0 -- -- V VDS= -5V ,ID=-250μA Gate-Source Leakage , Forward -- -- -100 nA VGS=-20V Gate-Source Leakage , Reverse -- -- 100 nA VGS=20V -- -- -1.0 -- -- -5.0 -14 -- -- -- 0.08 IGSS IDSS IDON Min. Typ. Max. Units Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source RDS(on) gfs td(on) tr td(off) tf On-State Resistance ② -- Forward Transconductance ② -- 0.1 0.11 0.16 5.0 -- -- 17 30 -- 17 40 Turn-Off Delay Time -- 33 50 Fall Time -- 19 50 Turn-On Delay Time Rise Time Qg Total Gate Charge -- 17 35 Qgs Gate-Source Charge -- 3.6 -- Qgd Gate-Drain (“Miller”) Charge -- 4.3 -- μA A Ω S ns Test Condition VDS=-24V VDS=-15V,TC=70℃ VDS=-5V ,VGS=-10V VGS=-10V,ID=-3.5A VGS=-4.5V,ID=-2.0A VDS =-15V,ID=-3.5A VDD=-15V,ID=-1.0A, R0=6.0Ω, ②③ VDS=-10V,VGS=10V, nC ID=-3.5A ②③ Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Continuous Source Current IS (Body Diode) --- -- Test Condition Modified MOSFET Symbol -1.7 A Showing the Integral Reverse P-N Junction Rectifier -- ○D │ ││ ─ ▶▼ ─ │││─ │─ ─┘││─│ ○ G │ ○S VSD Diode Forward Voltage ② -- -- -1.2 V TA=25℃,IS=-1.7A,VGS=0V trr Reverse Recovery Time ② -- 40 100 ns TA=25℃,IF=-3.5A,diF/dt=100A/μs Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ③ Essentially Independent of Operating Temperature Dual P-CHANNEL POWER MOSFET SSD2008A ( N-Channel ) Fig 1. Output Characteristics Fig 2. Transfer Characteristics 14 9 150 oC 25 oC Vgs= 10,9,8,7,6,5,4V -ID , Drain Current [A] ID , Drain Current [A] 12 10 10 8 6 Vgs= 3V 4 2 8 - 55 oC 7 6 5 4 3 2 0 0 2 4 6 8 1 0 10 1 2 3 4 5 VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Forward Voltage 6 0.10 IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 101 0.08 0.06 VGS =4.5 V 0.04 VGS = 10 V 0.02 0.00 0 2 4 6 8 100 150 oC 25 oC 10-1 0.0 10 ID , Drain Current [A] Fig 5. Capacitance vs. Drain-Source Voltage 1.2 1.6 2.0 Fig 6. Gate Charge vs. Gate-Source Voltage 10 600 VGS , Gate-Source Voltage [V] @ Notes : 1. VGS = 0 V 2. f = 1 MHz 800 Capacitance [pF] 0.8 VSD , Source-Drain Voltage [V] 1000 C iss 400 C oss 200 C rss 0 0.4 5 10 15 20 VDS , Drain-Source Voltage [V] 25 30 8 6 VDS = 10 V ID= 3.5A 4 2 0 0 4 8 12 QG , Total Gate Charge [nC] 16 20 Dual P-CHANNEL POWER MOSFET SSD2008A ( N-Channel ) Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance 1.6 1.1 1.0 ID = 250 µA 0.9 1.4 1.2 VGS = 10 V ID = 3.5 A 1.0 0.8 0.6 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 TJ , Junction Temperature [oC] 0 25 50 75 100 100 Duty Cycle=0.5 0.2 PDM -1 10 0.1 t1 t2 @ Notes : 1. Zθ J C (t)=62.5 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) 4. Surface Mounted 0.05 0.02 10- 2 - 4 10 Single Pulse 10- 3 125 TJ , Junction Temperature [oC] Fig 9. Nomalized Effective Transient Thermal Impedance, Junction-to-Ambient Thermal Response BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 10- 2 10- 1 100 t1 , Square Wave Pulse Duration 101 [sec] 150 175 Dual P-CHANNEL POWER MOSFET SSD2008A ( P-Channel ) Fig 1. Output Characteristics Fig 2. Transfer Characteristics 14 14 Vgs=-10,-9,-8,-7,-6,-5,V 12 Vgs=-4V -ID , Drain Current [A] -ID , Drain Current [A] 12 10 8 6 4 Vgs=-3V 2 0 0 2 4 6 8 10 8 6 4 2 0 10 -55 oC 25 oC 150 oC 0 1 2 3 4 5 6 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Forward Voltage 7 0.25 -IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 101 0.20 0.15 VGS = -4.5 V 0.10 VGS = -10 V 0.05 0.00 0 2 4 6 8 10 100 150 oC 10-1 25 oC 0.0 -ID , Drain Current [A] Fig 5. Capacitance vs. Drain-Source Voltage 1.5 2.0 2.5 Fig 6. Gate Charge vs. Gate-Source Voltage 10 VGS , Gate-Source Voltage [V] 800 Capacitance [pF] 1.0 -VSD , Source-Drain Voltage [V] 1000 C iss 600 @ Notes : 1. VGS = 0 V 2. f = 1 MHz 400 C oss 200 C rss 0 0.5 5 10 15 20 -VDS , Drain-Source Voltage [V] 25 30 8 6 VDS = -10 V ID= -3.5A 4 2 0 0 4 8 12 QG , Total Gate Charge [nC] 16 20 Dual P-CHANNEL POWER MOSFET SSD2008A ( P-Channel ) Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance 2.0 1.1 ID = -250 µA 1.0 0.9 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 1.5 VGS = -10 V ID = -3.5 A 1.0 0.5 -75 -50 -25 o 0 25 50 75 100 Fig 9. Nomalized Effective Transient Thermal Impedance, Junction-to-Ambient 100 Duty Cycle=0.5 0.2 PDM 10- 1 0.1 t1 t2 @ Notes : 1. Zθ J C (t)=62.5 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) 4. Surface Mounted 0.05 0.02 Single Pulse 10- 2 - 4 10 -3 10 125 TJ , Junction Temperature [oC] TJ , Junction Temperature [ C] Thermal Response -BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 10- 2 10- 1 100 t1 , Square Wave Pulse Duration 101 [sec] 150 175 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5