MOTOROLA BDC01D

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by BDC01D/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
2
3
BASE
1
1
EMITTER
2
3
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
MAXIMUM RATINGS
Rating
Symbol
BDC01D
Unit
Collector – Emitter Voltage
VCEO
100
Vdc
Collector – Base Voltage
VCBO
100
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
0.5
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)CEO
100
—
Vdc
Collector Cutoff Current
(VCB = 100 V, IE = 0)
ICBO
—
0.1
mAdc
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
IEBO
—
100
nAdc
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Voltage
(IC = 10 mA, IB = 0)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
BDC01D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
40
25
400
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
hFE
—
Collector – Emitter Saturation Voltage(1)
(IC = 1000 mA, IB = 100 mA)
VCE(sat)
—
0.7
Vdc
Collector – Emitter On Voltage(1)
(IC = 1000 mA, VCE = 1.0 V)
VBE(on)
—
1.2
Vdc
fT
50
—
MHz
Cob
—
30
pF
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle 2.0%.
400
hFE , DC CURRENT GAIN
TJ = 125°C
VCE = 1.0 V
200
25°C
–55°C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500
1.0
1.0
TJ = 25°C
0.6
0.8
IC = 10 mA
50
mA
100 mA
250 mA
500 mA
0.4
0.2
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.05
0.1
0.2
0.5
2.0
5.0
1.0
IB, BASE CURRENT (mA)
10
20
Figure 2. Collector Saturation Region
2
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
50
0
0.5
1.0
2.0
5.0
10
50
100
20
IC, COLLECTOR CURRENT (mA)
200
500
Figure 3. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
80
–0.8
TJ = 25°C
60
–1.2
40
C, CAPACITANCE (pF)
θ VB, TEMPERATURE COEFFICIENT (mV/°C)
BDC01D
–1.6
θVB for VBE
–2.0
–2.4
Cibo
20
10
8.0
6.0
–2.8
0.5
1.0
2.0
5.0
20
50
10
100
IC, COLLECTOR CURRENT (mA)
200
Cobo
4.0
0.1
500
0.2
0.5 1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 5. Capacitance
300
200
VCE = 2.0 V
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 4. Base–Emitter Temperature Coefficient
50
100
70
50
DUTY CYCLE ≤ 10%
2k
1.0 ms
1k
100 µs
500
TA = 25°C
200
100
50
20
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 6. Current–Gain — Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
1.0
TC = 25°C
1.0 s
dc
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSW05
MPSW06
2.0
5.0
10
20
60 80 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating Area
3
BDC01D
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
P
L
F
K
X X
D
G
H
J
V
1 2 3
N C
SECTION X–X
N
CASE 029–05
(TO–226AE)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BDC01D/D