Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain Current Continuous(1) Pulsed(2) 1 2 Vdc Vpk CASE 29–04, STYLE 30 TO–92 (TO–226AA) mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS — — 30 nAdc Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) V(BR)DSX 200 — — Vdc IGSS — 0.01 10 nAdc Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(Th) 1.0 — 3.0 Static Drain–Source On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on) OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS(2) Vdc Ohms — — — — 28 14 — — 4.5 4.8 6.0 6.4 SMALL– SIGNAL CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 60 — pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss — 6.0 — pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss — 30 — pF gfs 200 400 — mmhos Turn–On Time ton — 6.0 15 ns Turn–Off Time toff — 12 15 ns Forward Transconductance (VDS = 25 Vdc, ID = 250 mAdc) SWITCHING CHARACTERISTICS 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. v v REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE 50 Ω INPUT Vout 23 PULSE GENERATOR 20 dB 50 Ω ATTENUATOR Vin 40 pF INPUT Vin 50% PULSE WIDTH 50% 10% 200 180 VGS = 0 V 160 5.0 VGS = 10 V C, CAPACITANCE (pF) VDS , DRAIN–SOURCE VOLTAGE (VOLTS) 10 250 mA 2.0 1.0 100 mA 0.5 140 120 100 Ciss 80 60 40 0.2 20 0.1 –55 –35 85 105 45 –15 +5.0 25 65 TJ, JUNCTION TEMPERATURE (°C) 125 0 145 Coss Crss 40 10 20 30 VDS, DRAIN – SOURCE VOLTAGE (VOLTS) 0 Figure 3. On Voltage versus Temperature 0.8 0.7 0.7 0.6 10 V VGS = 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 5.0 6.0 7.0 8.0 2.0 3.0 4.0 VGS, GATE – SOURCE VOLTAGE (VOLTS) Figure 5. Transfer Characteristic 9.0 50 Figure 4. Capacitance Variation I D(on) , DRAIN CURRENT (AMPS) ID(on) , DRAIN CURRENT (AMPS) 90% Figure 2. Switching Waveforms Figure 1. Switching Test Circuit 2 90% 10% OUTPUT Vout INVERTED 1M 10 V 0 toff 90% 50 50 ton 10 5.0 V 0.5 0.4 0.3 4.0 V 0.2 0.1 3.0 V 0 2.0 10 4.0 6.0 8.0 12 14 16 VDS, DRAIN – SOURCE VOLTAGE (VOLTS) 18 20 Figure 6. Output Characteristic Motorola Small–Signal Transistors, FETs and Diodes Device Data ID(on), DRAIN CURRENT (AMPS) 0.7 10 V 0.6 0.5 5.0 V 0.4 0.3 4.0 V 0.2 0.1 3.0 V 1.0 2.0 3.0 4.0 5.0 VDS, DRAIN – SOURCE VOLTAGE (VOLTS) Figure 7. Saturation Characteristic Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D X X G J H V C SECTION X–X 1 N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE Motorola reserves the right to make changes without further notice to any products herein. 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