MOTOROLA BS107A

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by BS107/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel — Enhancement
1 DRAIN
2
GATE

3 SOURCE
MAXIMUM RATINGS
Rating
Drain – Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Symbol
Value
Unit
VDS
200
Vdc
VGS
VGSM
± 20
± 30
ID
IDM
250
500
PD
350
mW
TJ, Tstg
– 55 to 150
°C
Drain Current
Continuous(1)
Pulsed(2)
1
2
Vdc
Vpk
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0)
IDSS
—
—
30
nAdc
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc)
V(BR)DSX
200
—
—
Vdc
IGSS
—
0.01
10
nAdc
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS)
VGS(Th)
1.0
—
3.0
Static Drain–Source On Resistance
BS107 (VGS = 2.6 Vdc, ID = 20 mAdc)
(VGS = 10 Vdc, ID = 200 mAdc)
BS107A (VGS = 10 Vdc)
(ID = 100 mAdc)
(ID = 250 mAdc)
rDS(on)
OFF CHARACTERISTICS
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Vdc
Ohms
—
—
—
—
28
14
—
—
4.5
4.8
6.0
6.4
SMALL– SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
60
—
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
6.0
—
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
30
—
pF
gfs
200
400
—
mmhos
Turn–On Time
ton
—
6.0
15
ns
Turn–Off Time
toff
—
12
15
ns
Forward Transconductance
(VDS = 25 Vdc, ID = 250 mAdc)
SWITCHING CHARACTERISTICS
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
v
v
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
RESISTIVE SWITCHING
+25 V
TO SAMPLING SCOPE
50 Ω INPUT
Vout
23
PULSE GENERATOR
20 dB
50 Ω ATTENUATOR
Vin
40 pF
INPUT Vin
50%
PULSE WIDTH
50%
10%
200
180
VGS = 0 V
160
5.0
VGS = 10 V
C, CAPACITANCE (pF)
VDS , DRAIN–SOURCE VOLTAGE (VOLTS)
10
250 mA
2.0
1.0
100 mA
0.5
140
120
100
Ciss
80
60
40
0.2
20
0.1
–55
–35
85 105
45
–15 +5.0 25
65
TJ, JUNCTION TEMPERATURE (°C)
125
0
145
Coss
Crss
40
10
20
30
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
0
Figure 3. On Voltage versus Temperature
0.8
0.7
0.7
0.6
10 V
VGS = 10 V
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
5.0 6.0 7.0 8.0
2.0 3.0 4.0
VGS, GATE – SOURCE VOLTAGE (VOLTS)
Figure 5. Transfer Characteristic
9.0
50
Figure 4. Capacitance Variation
I D(on) , DRAIN CURRENT (AMPS)
ID(on) , DRAIN CURRENT (AMPS)
90%
Figure 2. Switching Waveforms
Figure 1. Switching Test Circuit
2
90%
10%
OUTPUT Vout
INVERTED
1M
10 V
0
toff
90%
50
50
ton
10
5.0 V
0.5
0.4
0.3
4.0 V
0.2
0.1
3.0 V
0
2.0
10
4.0
6.0 8.0
12
14
16
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
18
20
Figure 6. Output Characteristic
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ID(on), DRAIN CURRENT (AMPS)
0.7
10 V
0.6
0.5
5.0 V
0.4
0.3
4.0 V
0.2
0.1
3.0 V
1.0
2.0
3.0
4.0
5.0
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 7. Saturation Characteristic
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
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4
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Motorola Small–Signal Transistors, FETs and Diodes DeviceBS107/D
Data