Order this document by MGW21N60ED/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and rugged short circuit device. • Industry Standard TO–247 Package • High Speed: Eoff = 65 mJ/A typical at 125°C • High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V • Low On–Voltage — 2.1 V typical at 20 A, 125°C • Soft Recovery Free Wheeling Diode is included in the Package • Robust High Voltage Termination • ESD Protection Gate–Emitter Zener Diodes IGBT IN TO–247 21 A @ 90°C 31 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON–VOLTAGE C G G C E E CASE 340K–01, TO–247 AE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ± 20 Vdc Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) IC25 IC90 ICM 31 21 42 Adc PD 142 1.14 Watts W/°C TJ, Tstg – 55 to 150 °C tsc 10 ms RθJC RθJC RθJA 0.88 1.4 45 °C/W TL 260 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Diode Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. This document contains information on a new product. Specifications and information herein are subject to change without notice. IGBT Motorola Motorola, Inc. 1997 Device Data 1 MGW21N60ED ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 600 — — 870 — — mV/°C 15 — — Vdc — — — — 10 200 — — 50 — — — 1.7 1.5 2.2 2.1 — 2.5 4.0 — 6.0 10 8.0 — mV/°C gfe — 8.6 — Mhos pF OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) V(BR)CES Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) BVECS Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc µAdc µAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 10 Adc) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 20 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Cies — 1605 — Coes — 146 — Cres — 23 — td(on) — 29 — tr — 60 — td(off) — 238 — tf — 140 — Eoff — 0.8 1.15 Eon — 0.6 — Total Switching Loss Ets — 1.4 — Turn–On Delay Time td(on) — 28 — tr — 62 — td(off) — 338 — tf — 220 — Eoff — 1.3 — Turn–On Switching Loss Eon — 0.8 — Total Switching Loss Ets — 2.1 — Gate Charge QT — 86 — Q1 — 18 — Q2 — 39 — — — 1.7 1.6 1.3 2.0 1.9 — 2.3 Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Turn–Off Switching Loss (VCC = 360 Vdc, Vd IC = 20 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH H, RG = 20 Ω, TJ = 25 25°C) C) Energy losses include “tail” Turn–On Switching Loss Rise Time Turn–Off Delay Time Fall Time Turn–Off Switching Loss (VCC = 360 Vdc, Vd IC = 20 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH H, RG = 20 Ω, TJ = 125°C) 125 C) Energy losses include “tail” (VCC = 360 Vdc, Vdc IC = 20 Adc Adc, VGE = 15 Vdc) ns mJ ns mJ nC DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 10 Adc) (IEC = 10 Adc, TJ = 125°C) (IEC = 17 Adc) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 VFEC Vdc (continued) Motorola IGBT Device Data MGW21N60ED ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit trr — 94 — ns ta — 32 — tb — 62 — QRR — 0.16 — µC trr — 145 — ns ta — 50 — tb — 95 — QRR — 0.75 — — 13 — DIODE CHARACTERISTICS — continued Reverse Recovery Time ((IF = 20 Adc, Ad , VR = 360 Vd Vdc,, dIF/dt = 200 A/µs) Reverse Recovery Stored Charge Reverse Recovery Time ((IF = 20 Adc, Ad , VR = 360 Vd Vdc,, dIF/dt = 200 A/µs, TJ = 125°C) Reverse Recovery Stored Charge µC INTERNAL PACKAGE INDUCTANCE LE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) 60 20 V 12.5 V 40 VGE = 10 V 20 0 15 V 20 V 12.5 V 40 VGE = 10 V 20 0 2 0 4 6 6 8 Figure 2. Output Characteristics 30 20 TJ = 125°C 10 25°C 0 7 9 11 13 15 17 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics 40 5 4 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE = 100 V 5 ms PULSE WIDTH 50 2 0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 60 IC , COLLECTOR CURRENT (AMPS) 17.5 V TJ = 125°C IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 60 15 V 17.5 V TJ = 25°C nH 2.3 IC = 20 A 2.1 15 A 1.9 1.7 10 A VGE = 15 V 80 ms PULSE WIDTH 1.5 –50 –25 0 25 50 75 100 125 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector–To–Emitter Saturation Voltage versus Junction Temperature Motorola IGBT Device Data 150 3 MGW21N60ED TJ = 25°C VGE = 0 V 3200 C, CAPACITANCE (pF) VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) 4000 2400 Cies Coes 1600 Cres 800 0 0 5 10 15 20 12 Q1 Q2 8 TJ = 25°C VCC = 300 V IC = 20 A 4 0 0 25 50 100 75 125 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate–To–Emitter Voltage versus Total Charge 2.5 TJ = 125°C VDD = 360 V VGE = 15 V 2.5 ETS , TOTAL ENERGY LOSSES (mJ) ETS , TOTAL ENERGY LOSSES (mJ) QT 16 25 3.0 IC = 20 A 2.0 15 A 1.5 1.0 10 A 0.5 0 20 VCC = 360 V VGE = 15 V RG = 20 W 2.0 IC = 20 A 15 A 1.5 10 A 1.0 0.5 0 5 10 20 30 40 50 –50 –25 0 50 25 75 100 RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Total Energy Losses versus Gate Resistance Figure 8. Total Energy Losses versus Junction Temperature 125 1.6 Eoff , TURN–OFF ENERGY LOSSES (mJ) ETS , TOTAL ENERGY LOSSES (mJ) 1.5 TJ = 125°C VCC = 360 V VGE = 15 V RG = 20 W 2.0 1.2 0.8 0.4 TJ = 125°C VDD = 360 V VGE = 15 V 1.1 15 A 0.9 0.7 10 A 0.5 0 0 4 IC = 20 A 1.3 5 10 15 20 5 15 25 35 IC, COLLECTOR CURRENT (AMPS) RG, GATE RESISTANCE (OHMS) Figure 9. Total Energy Losses versus Collector Current Figure 10. Turn–Off Losses versus Gate Resistance 45 Motorola IGBT Device Data MGW21N60ED VCC = 360 V VGE = 15 V RG = 20 W 1.6 Eoff , TURN–OFF ENERGY LOSSES (mJ) Eoff , TURN–OFF ENERGY LOSSES (mJ) 1.4 IC = 20 A 1.2 15 A 10 A 0.8 0.4 1.0 0.8 0.6 0.4 0.2 0 0 –50 –25 0 25 50 75 100 125 0 150 5 15 10 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS) Figure 11. Turn–Off Losses versus Junction Temperature Figure 12. Turn–Off Losses versus Collector Current 100 20 100 IC , COLLECTOR CURRENT (AMPS) IF , INSTANTANEOUS FORWARD CURRENT (AMPS) TJ = 125°C VCC = 360 V VGE = 15 V RG = 20 W 1.2 TJ = 125°C 10 25°C 1 10 TJ = 125°C RGE = 20 W VGE = 15 V 1 0.5 1.0 1.5 2.0 VFM, FORWARD VOLTAGE DROP (VOLTS) Figure 13. Forward Characteristics versus Current Motorola IGBT Device Data 2.5 1 10 100 1000 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 14. Reverse Biased Safe Operating Area 5 MGW21N60ED PACKAGE DIMENSIONS 0.25 (0.010) M –T– –Q– T B M E –B– C 4 L U A R 1 K 2 3 –Y– P V H F G D 0.25 (0.010) M Y Q J NOTES: DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 S CASE 340K–01 ISSUE A STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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