Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS BROADBAND 100 – 500 MHz RF POWER FET • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency — 50% (Min) 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1 • Overall Lower Capacitance @ 28 V Ciss — 135 pF Coss — 140 pF Crss — 17 pF • Simplified AVC, ALC and Modulation Typical data for power amplifiers in industrial and commercial applications: • Typical Performance @ 400 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 12.5 dB Efficiency — 60% • Typical Performance @ 225 MHz, 28 Vdc Output Power — 200 Watts Power Gain — 15 dB Efficiency — 65% D G S (FLANGE) G CASE 375–04, STYLE 2 D MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage Rating VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc VGS ± 40 Adc Gate–Source Voltage Drain Current — Continuous ID 26 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 400 2.27 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 0.44 °C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF275G 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 1 mA Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1 µA Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.5 2.5 4.5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 5 A) VDS(on) 0.5 0.9 1.5 Vdc gfs 3 3.75 — mhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss — 135 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Coss — 140 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Crss — 17 — pF Common Source Power Gain (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) Gps 10 11.2 — dB Drain Efficiency (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) η 50 55 — % Electrical Ruggedness (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA, VSWR 30:1 at all Phase Angles) ψ OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) ON CHARACTERISTICS (1) Forward Transconductance (VDS = 10 V, ID = 2.5 A) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS (2) (Figure 1) No Degradation in Output Power (1.) Each side of device measured separately. (2.) Measured in push–pull configuration. MRF275G 2 MOTOROLA RF DEVICE DATA B A C17 C18 L5 C14 R1 C15 C16 D.U.T. Z3 C10 Z5 Z7 C11 C2 B1 C5 C6 C7 C8 C9 B2 C3 C12 Z4 Z2 Z6 Z8 C4 C13 L2 L4 C20 C21 A B1 B2 C1, C2, C3, C4, C10, C11, C12, C13 C5, C8 C6 C7 C9 C14, C15, C16, C20, C21, C22 C17, C18 C19 L1, L2 + L3 C1 Z1 C19 C22 L1 L3, L4 L6 +28 V +VGG B Balun, 50 Ω, 0.086″ O.D. 2″ Long, Semi Rigid Coax Balun, 50 Ω, Coax 0.141″ O.D. 2″ Long, Semi Rigid L5 L6 270 pF, ATC Chip Capacitor 1.0 – 20 pF, Trimmer Capacitor, Johanson 22 pF, Mini–Unelco Capacitor 15 pF, Unelco Capacitor 2.1 pF, ATC Chip Capacitor R1 W1 – W4 0.1 µF, Ceramic Capacitor 680 pF, Feedthru Capacitor 10 µF, 50 V, Electrolytic Capacitor, Tantalum 10 Turns AWG #24, 0.145″ O.D., 106 nH Taylor–Spring Inductor 10 Turns AWG #18, 0.340″ I.D., Enameled Wire Z1, Z2 Z3, Z4, Z5, Z6 Z7, Z8 Ferroxcube VK200 20/4B 4 Turns #16, 0.340″ I.D., Enameled Wire 1.0 kΩ,1/4 W Resistor 20 x 200 x 250 mils, Wear Pads, Beryllium–Copper, (See Component Location Diagram) 1.10″ x 0.245″, Microstrip Line 0.300″ x 0.245″, Microstrip Line 1.00″ x 0.245″, Microstrip Line Board material 0.060″ Teflon–fiberglass, εr = 2.55, copper clad both sides, 2 oz. copper. Points A are connected together on PCB. Points B are connected together on PCB. Figure 1. 500 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF275G 3 TYPICAL CHARACTERISTICS 160 225 MHz 250 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 300 400 MHz 500 MHz 200 150 100 IDQ = 2 x 100 mA VDD = 28 V 50 10 15 Pin, INPUT POWER (Watts) 5 100 80 60 VDS = 28 V IDQ = 2 x 100 mA Pin = Constant f = 500 MHz 40 0 –10 25 20 120 20 0 0 140 Figure 2. Output Power versus Input Power 8 Pout , OUTPUT POWER (WATTS) I D , DRAIN CURRENT (AMPS) 2 4 180 VDS = 10 V VGS(th) = 2.5 V 9 7 6 5 4 3 2 Pin = 14 W 160 140 10 W 120 100 6W 80 60 40 IDQ = 2 x 100 mA f = 500 MHz 20 1 0 0.5 1 2 1.5 2.5 3.5 3 VGS, GATE–SOURCE VOLTAGE (V) 4 4.5 0 12 5 Figure 4. Drain Current versus Gate Voltage (Transfer Characteristics) 14 16 22 18 20 VDD, SUPPLY VOLTAGE (V) 24 26 28 Figure 5. Output Power versus Supply Voltage 250 200 180 12 W Pin = 14 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 0 –6 –4 –2 VGS, GATE–SOURCE VOLTAGE (V) Figure 3. Output Power versus Gate Voltage 10 0 –8 160 140 10 W 120 100 6W 80 60 40 IDQ = 2 x 100 mA f = 400 MHz 20 0 12 14 16 18 20 22 VDD, SUPPLY VOLTAGE (V) 24 26 Figure 6. Output Power versus Supply Voltage MRF275G 4 28 200 10 W 150 Pin = 4 W 100 IDQ = 2 x 100 mA f = 225 MHz 50 0 12 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (V) 26 28 Figure 7. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS VGS, GATE–SOURCE VOLTAGE (NORMALIZED) 1000 C, CAPACITANCE (pF) Coss 100 Ciss Crss 10 VGS = 0 V f = 1.0 MHz 1 0 5 20 10 15 VDS, DRAIN–SOURCE VOLTAGE (V) 25 30 1.3 VDD = 28 V 1.2 1.1 ID = 4 A 1 2A 0.9 3A 0.8 0.7 –25 Figure 8. Capacitance versus Drain–Source Voltage* *Data shown applies only to one half of device, MRF275G 0 25 0.1 A 75 50 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 9. Gate–Source Voltage versus Case Temperature I D , DRAIN CURRENT (AMPS) 100 TC = 25°C 10 1 1 10 VDS, DRAIN–SOURCE VOLTAGE (V) 100 Figure 10. DC Safe Operating Area MOTOROLA RF DEVICE DATA MRF275G 5 VDD = 28 V, IDQ = 2 x 100 mA, Pout = 150 W f = 500 MHz Zo = 10 Ω 400 ZOL* Zin 225 Zin Ohms ZOL* Ohms 225 1.6 – j2.30 3.2 – j1.50 400 1.9 + j0.48 2.3 – j0.19 500 1.9 + j2.60 2.0 + j1.30 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. f = 500 MHz 400 f (MHz) Note: Input and output impedance values given are measured from gate to gate and drain to drain respectively. 225 Figure 11. Series Equivalent Input/Output Impedance MRF275G 6 MOTOROLA RF DEVICE DATA B A L5 C14 C15 L6 BIAS C10 R1 C11 C1 C12 R2 L3 D.U.T. L1 C8 Z1 B1 C3 C2 C4 Z3 Z2 C7 Z4 B C16 C1, C2, C8, C9 C3, C5, C7 C4 C6 C10, C12, C13, C16, C17 C11 C14, C15 C18 Z6 L4 A B2 B2 C9 R3 B1 Z5 C6 C5 L2 28 V C18 C13 Balun, 50 Ω, 0.086″ O.D. 2″ Long, Semi Rigid Coax Balun, 50 Ω, 0.141″ O.D. 2″ Long, Semi Rigid Coax 270 pF, ATC Chip Capacitor 1.0 – 20 pF, Trimmer Capacitor 15 pF, ATC Chip Capacitor 33 pF, ATC Chip Capacitor 0.01 µF, Ceramic Capacitor 1.0 µF, 50 V, Tantalum 680 pF, Feedthru Capacitor 20 µF, 50 V, Tantalum 0.180″ C17 L1, L2 L3, L4 L5 L6 R1 R2, R3 Z1, Z2 Z3, Z4 Z5, Z6 #18 Wire, Hairpin Inductor 12 Turns #18, 0.340″ I.D., Enameled Wire Ferroxcube VK200 20/4B 3 Turns #16, 0.340″ I.D., Enameled Wire 1.0 kΩ, 1/4 W Resistor 10 kΩ, 1/4 W Resistor 0.400″ x 0.250″, Microstrip Line 0.870″ x 0.250″, Microstrip Line 0.500″ x 0.250″, Microstrip Line 0.200″ Board material 0.060″ Teflon–fiberglass, εr = 2.55, copper clad both sides, 2 oz. copper. Figure 12. 400 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF275G 7 L2 R1 BIAS 0 – 6 V C8 C3 C10 C9 C4 R2 + 28 V – L1 D.U.T. T2 T1 C6 C5 C1 C1 C2, C3, C7, C8 C4, C9 C5 C6 C10 L1 L2 C7 C2 8.0 – 60 pF, Arco 404 1000 pF, Chip Capacitor 0.1 µF, Chip Capacitor 180 pF, Chip Capacitor 100 pF and 130 pF, Chips in Parallel 0.47 µF, Chip Capacitor, 1215 or Equivalent, Kemet 10 Turns AWG #16, 1/4″ I.D., Enamel Wire, Close Wound Ferrite Beads of Suitable Material for 1.5 – 2.0 µH Total Inductance R1 R2 T1 T2 100 Ω, 1/2 W 1.0 k Ω, 1/2 W 4:1 Impedance Ratio, RF Transformer Can Be Made of 25 Ω, Semi Rigid Coax, 47 – 52 Mils O.D. 1:9 Impedance Ratio, RF Transformer. Can Be Made of 15 – 18 Ω, Semi Rigid Coax, 62 – 90 Mils O.D. NOTE: For stability, the input transformer T1 should be loaded NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer. Board material 062″ fiberglass (G10), εr 5, Two sided, 1 oz. Copper. ^ Unless otherwise noted, all chip capacitors are ATC Type 100 or Equivalent. Figure 13. 225 MHz Test Circuit MRF275G 8 MOTOROLA RF DEVICE DATA L5 + B1 C17 R1 C16 C15 C14 L3 C19 C18 C22 L6 BEADS 1–3 C5 W4 C1 C2 W1 L1 W2 C7 W3 C6 C3 C4 C10 C11 C9 C12 C13 C8 L2 L4 BEADS 4–6 C20 MRF275G B2 C21 JL Figure 14. MRF275G Component Location (500 MHz) (Not to Scale) MRF275G JL Figure 15. MRF275G Circuit Board Photo Master (500 MHz) Scale 1:1 (Reduced 25% in printed data book, DL110/D) MOTOROLA RF DEVICE DATA MRF275G 9 Figure 16. MRF275G Test Fixture RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to– source (Cgs). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain– to–source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE The Ciss given in the electrical characteristics table was measured using method 2 above. It should be noted that Ciss, Coss, Crss are measured at zero drain current and are MRF275G 10 provided for general information about the device. They are not RF design parameters and no attempt should be made to use them as such. LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain, data presented in Figure 3 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full–on condition. This on–resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate–source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 109 ohms — resulting in a leakage current of a few nanoamperes. MOTOROLA RF DEVICE DATA Gate control is achieved by applying a positive voltage slightly in excess of the gate–to–source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating (or any of the maximum ratings on the front page). Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of this device are essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can result in turn–on of the devices due to voltage build–up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate–to–source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate–drain capacitance. If the gate–to–source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate–threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with grounded equipment. MOTOROLA RF DEVICE DATA DESIGN CONSIDERATIONS The MRF275G is a RF power N–channel enhancement mode field–effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications. Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF275G is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF275G was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF275G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MRF275G 11 PACKAGE DIMENSIONS U G 1 Q RADIUS 2 PL 0.25 (0.010) M T A M DIM A B C D E G H J K N Q R U –B– 5 3 4 D E B 2 R K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. J N H –T– –A– SEATING PLANE C INCHES MIN MAX 1.330 1.350 0.370 0.410 0.190 0.230 0.215 0.235 0.050 0.070 0.430 0.440 0.102 0.112 0.004 0.006 0.185 0.215 0.845 0.875 0.060 0.070 0.390 0.410 1.100 BSC STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.79 34.29 9.40 10.41 4.83 5.84 5.47 5.96 1.27 1.77 10.92 11.18 2.59 2.84 0.11 0.15 4.83 5.33 21.46 22.23 1.52 1.78 9.91 10.41 27.94 BSC DRAIN DRAIN GATE GATE SOURCE CASE 375–04 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax INTERNET: http://motorola.com/sps MRF275G 12 ◊ MRF275G/D MOTOROLA RF DEVICE DATA