FREESCALE MRF1511NT1_06

Freescale Semiconductor
Technical Data
Document Number: MRF1511N
Rev. 6, 9/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF1511NT1
Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device
makes it ideal for large- signal, common source amplifier applications in 7.5 volt
portable FM equipment.
D
• Specified Performance @ 175 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11.5 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
G
• Characterized with Series Equivalent Large - Signal
Impedance Parameters
• Broadband UHF/VHF Demonstration Amplifier Information
S
Available Upon Request
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
175 MHz, 8 W, 7.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +40
Vdc
Gate - Source Voltage
VGS
± 20
Vdc
ID
4
Adc
PD
62.5
0.5
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Value (2)
Unit
RθJC
2
°C/W
Drain Current — Continuous
Total Device Dissipation @ TC =
Derate above 25°C
25°C (1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula PD =
Rating
Package Peak Temperature
Unit
1
260
°C
TJ – TC
RθJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1511NT1
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 170 μA)
VGS(th)
1
1.6
2.1
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.4
—
Vdc
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
100
—
pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
53
—
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
8
—
pF
Common - Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)
Gps
—
13
—
dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)
η
—
70
—
%
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture)
MRF1511NT1
2
RF Device Data
Freescale Semiconductor
VGG
C8
+
C7
C6
R4
B1
B2
C18
C17
+
C15
C16
VDD
R3
L4
C5
R2
Z6
Z7
Z8
L3
Z9
N2
Z10
R1
N1
Z1
Z2
L2
Z3
Z4
Z5
DUT
C14
C9
C1
RF
INPUT
L1
C2
C10
C11
C12
RF
OUTPUT
C13
C3
C4
B1, B2
Short Ferrite Bead, Fair Rite Products
(2743021446)
C1, C5, C18 120 pF, 100 mil Chip Capacitor
C2, C10, C12 0 to 20 pF, Trimmer Capacitor
C3
33 pF, 100 mil Chip Capacitor
C4
68 pF, 100 mil Chip Capacitor
C6, C15
10 μF, 50 V Electrolytic Capacitor
C7, C16
1,200 pF, 100 mil Chip Capacitor
C8, C17
0.1 μF, 100 mil Chip Capacitor
C9
150 pF, 100 mil Chip Capacitor
C11
43 pF, 100 mil Chip Capacitor
C13
24 pF, 100 mil Chip Capacitor
C14
300 pF, 100 mil Chip Capacitor
L1, L3
12.5 nH, A04T, Coilcraft
L2
26 nH, 4 Turn, Coilcraft
L4
55.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mount
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
15 Ω, 0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
1.0 kΩ, 0805 Chip Resistor
33 kΩ, 1/8 W Resistor
0.200″ x 0.080″ Microstrip
0.755″ x 0.080″ Microstrip
0.300″ x 0.080″ Microstrip
0.065″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.095″ x 0.080″ Microstrip
0.418″ x 0.080″ Microstrip
1.057″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
Glass Teflon®, 31 mils, 2 oz. Copper
Figure 1. 135 - 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 - 175 MHz
−5
VDD = 7.5 V
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
10
8
155 MHz
135 MHz
6
175 MHz
4
2
−10
135 MHz
175 MHz
−15
155 MHz
−20
VDD = 7.5 V
0
−25
0
0.1
0.2
0.3
0.4
0.5
Pin, INPUT POWER (WATTS)
0.6
Figure 2. Output Power versus Input Power
0.7
1
2
3
6
7
4
5
Pout, OUTPUT POWER (WATTS)
8
9
10
Figure 3. Input Return Loss
versus Output Power
MRF1511NT1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 135 - 175 MHz
16
70
155 MHz
155 MHz
60
Eff, DRAIN EFFICIENCY (%)
14
GAIN (dB)
135 MHz
175 MHz
12
10
8
50
175 MHz
40
30
20
VDD = 7.5 V
10
VDD = 7.5 V
0
6
1
2
3
4
5
6
7
8
Pout, OUTPUT POWER (WATTS)
9
10
0
Figure 4. Gain versus Output Power
2
3
4
5
6
7
Pout, OUTPUT POWER (WATTS)
8
9
10
80
Eff, DRAIN EFFICIENCY (%)
11
10
9
155 MHz
8
135 MHz
175 MHz
7
6
70
155 MHz
60
135 MHz
175 MHz
50
VDD = 7.5 V
Pin = 27 dBm
VDD = 7.5 V
Pin = 27 dBm
5
4
40
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
0
1000
Figure 6. Output Power versus Biasing Current
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
Figure 7. Drain Efficiency versus
Biasing Current
80
14
12
175 MHz
10
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
1
Figure 5. Drain Efficiency versus Output Power
12
Pout , OUTPUT POWER (WATTS)
135 MHz
135 MHz
155 MHz
8
6
155 MHz
60
135 MHz
175 MHz
50
40
IDQ = 150 mA
Pin = 27 dBm
4
70
2
IDQ = 150 mA
Pin = 27 dBm
30
4
6
8
10
12
14
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
16
4
6
8
10
12
14
16
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1511NT1
4
RF Device Data
Freescale Semiconductor
VGG
+
C8
C7
C6
B1
R4
B2
C16
C15
C14
VDD
+
C13
R3
L4
C5
R2
Z6
Z7
L3
Z8
Z9
N2
Z10
R1
N1
RF
INPUT
L1
Z1
C1
Z2
Z3
Z4
Z5
DUT
C12
C9
C2
C10
RF
OUTPUT
C11
C3
C4
B1, B2
Short Ferrite Bead, Fair Rite Products
(2743021446)
330 pF, 100 mil Chip Capacitor
43 pF, 100 mil Chip Capacitor
0 to 20 pF, Trimmer Capacitor
24 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
10 μF, 50 V Electrolytic Capacitor
1,200 pF, 100 mil Chip Capacitor
0.1 μF, 100 mil Chip Capacitor
380 pF, 100 mil Chip Capacitor
75 pF, 100 mil Chip Capacitor
82 nH, Coilcraft
55.5 nH, 5 Turn, Coilcraft
39 nH, 6 Turn, Coilcraft
C1, C12
C2
C3, C10
C4
C5, C16
C6, C13
C7, C14
C8, C15
C9
C11
L1
L2
L3
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
Type N Flange Mount
15 Ω, 0805 Chip Resistor
51 Ω, 1/2 W Resistor
100 Ω, 0805 Chip Resistor
33 kΩ, 1/8 W Resistor
0.136″ x 0.080″ Microstrip
0.242″ x 0.080″ Microstrip
1.032″ x 0.080″ Microstrip
0.145″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.134″ x 0.080″ Microstrip
0.490″ x 0.080″ Microstrip
0.872″ x 0.080″ Microstrip
0.206″ x 0.080″ Microstrip
Glass Teflon®, 31 mils, 2 oz. Copper
Figure 10. 66 - 88 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 66 - 88 MHz
10
0
8
88 MHz
VDD = 7.5 V
−2
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
77 MHz
66 MHz
6
4
2
VDD = 7.5 V
−4
−6
−8
88 MHz
−10
−12
−14
66 MHz
−16
77 MHz
−18
0
−20
0
0.1
0.2
0.3
0.4
0.5
Pin, INPUT POWER (WATTS)
0.6
Figure 11. Output Power versus Input Power
0.7
1
2
3
4
5
6
7
Pout, OUTPUT POWER (WATTS)
8
9
10
Figure 12. Input Return Loss
versus Output Power
MRF1511NT1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS, 66 - 88 MHz
18
70
Eff, DRAIN EFFICIENCY (%)
GAIN (dB)
77 MHz
88 MHz
14
88 MHz
60
66 MHz
16
12
10
50
40
30
20
VDD = 7.5 V
10
VDD = 7.5 V
8
0
1
2
3
4
5
6
7
8
Pout, OUTPUT POWER (WATTS)
9
10
1
Figure 13. Gain versus Output Power
3
5
6
7
4
Pout, OUTPUT POWER (WATTS)
8
9
10
80
11
10
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
2
Figure 14. Drain Efficiency versus
Output Power
12
77 MHz
9
88 MHz
8
66 MHz
7
6
70
60
88 MHz
77 MHz
50
66 MHz
VDD = 7.5 V
Pin = 25.7 dBm
VDD = 7.5 V
Pin = 25.7 dBm
5
4
40
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
0
1000
Figure 15. Output Power versus
Biasing Current
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
Figure 16. Drain Efficiency versus
Biasing Current
80
14
12
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
66 MHz
77 MHz
10
77 MHz
8
66 MHz
88 MHz
6
60
88 MHz
50
77 MHz
66 MHz
40
IDQ = 150 mA
Pin = 25.7 dBm
4
70
IDQ = 150 mA
Pin = 25.7 dBm
30
2
5
6
7
8
9
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus
Supply Voltage
10
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus
Supply Voltage
MRF1511NT1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 19. MTTF Factor versus Junction Temperature
MRF1511NT1
RF Device Data
Freescale Semiconductor
7
f = 175 MHz
Zin
Zo = 10 Ω
155
77
66
f = 88 MHz
ZOL*
135
Zin
f = 88 MHz
77
66
155
ZOL*
f = 175 MHz
135
Zin
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
135
20.1 - j0.5
2.53 - j2.61
66
25.3 - j0.31
3.62 - j0.751
155
17.0 +j3.6
3.01 - j2.48
77
25.6 +j3.62
3.59 - j0.129
175
15.2 +j7.9
2.52 - j3.02
88
26.7 +j6.79
3.37 - j0.173
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 68 pF capacitor in
series with gate. (See Figure 1).
Zin
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 24 pF capacitor in
series with gate. (See Figure 10).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Output
Matching
Network
Device
Under Test
Z
in
Z
*
OL
Figure 20. Series Equivalent Input and Output Impedance
MRF1511NT1
8
RF Device Data
Freescale Semiconductor
Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc)
IDQ = 150 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
30
0.88
- 165
18.92
95
0.015
8
0.84
- 169
50
0.88
- 171
11.47
91
0.016
-5
0.84
- 173
100
0.87
- 175
5.66
85
0.016
-7
0.84
- 176
150
0.87
- 176
3.75
82
0.015
-5
0.85
- 176
200
0.87
- 177
2.78
78
0.014
-6
0.84
- 176
250
0.87
- 177
2.16
75
0.014
- 10
0.85
- 176
300
0.88
- 177
1.77
72
0.012
- 17
0.86
- 176
350
0.88
- 177
1.49
69
0.013
- 11
0.86
- 176
400
0.88
- 177
1.26
66
0.013
- 17
0.87
- 175
450
0.88
- 177
1.08
64
0.011
- 20
0.87
- 175
500
0.89
- 176
0.96
63
0.012
- 20
0.88
- 175
IDQ = 800 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
30
0.89
- 166
18.89
95
0.014
10
0.85
- 170
50
0.88
- 172
11.44
91
0.015
8
0.84
- 174
100
0.87
- 175
5.65
86
0.016
-2
0.85
- 176
150
0.87
- 177
3.74
82
0.014
-8
0.84
- 177
200
0.87
- 177
2.78
78
0.013
- 18
0.85
- 177
250
0.88
- 177
2.16
75
0.012
- 11
0.85
- 176
300
0.88
- 177
1.77
73
0.015
- 15
0.86
- 176
350
0.88
- 177
1.50
70
0.009
-7
0.87
- 176
400
0.88
- 177
1.26
67
0.012
-3
0.87
- 176
450
0.88
- 177
1.09
65
0.012
- 18
0.87
- 175
500
0.89
- 177
0.97
64
0.009
- 10
0.88
- 175
IDQ = 1.5 A
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
30
0.90
- 168
17.89
95
0.013
2
0.86
- 172
50
0.89
- 173
10.76
91
0.013
3
0.86
- 175
100
0.88
- 176
5.32
86
0.014
- 19
0.86
- 177
150
0.88
- 177
3.53
83
0.013
-6
0.86
- 177
200
0.88
- 177
2.63
80
0.011
-4
0.86
- 177
250
0.88
- 178
2.05
77
0.012
- 14
0.86
- 177
300
0.88
- 177
1.69
75
0.013
-2
0.87
- 177
350
0.89
- 177
1.43
72
0.010
-9
0.87
- 176
400
0.89
- 177
1.22
70
0.014
-3
0.88
- 176
450
0.89
- 177
1.06
68
0.011
-8
0.88
- 176
500
0.89
- 177
0.94
67
0.011
- 15
0.88
- 176
MRF1511NT1
RF Device Data
Freescale Semiconductor
9
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common - source, RF power, N - Channel
enhancement mode, Lateral Metal - Oxide Semiconductor
Field - Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate - to - drain (Cgd), and
gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
Drain
Cgd
Gate
Cds
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
Cgs
Source
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full - on condition. This on - resistance, RDS(on), occurs
in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The
drain - source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate - to - source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can
result in turn - on of the devices due to voltage build - up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate - to - source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate - drain capacitance. If the
gate - to - source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate - threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MRF1511NT1
10
RF Device Data
Freescale Semiconductor
MOUNTING
The specified maximum thermal resistance of 2°C/W assumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Method for the PLD - 1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional information.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large - signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region.
Two - port stability analysis with this device’s
S - parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small - Signal Design
Using Two - Port Parameters” for a discussion of two port
network theory and stability.
MRF1511NT1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
B
D
1
2
R
0.115
2.92
0.115
2.92
L
0.020
0.51
4
0.35 (0.89) X 45_" 5 _
N
K
Q
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
4
ZONE W
2
1
3
G
S
C
Y
Y
E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
ZONE X
VIEW Y - Y
mm
SOLDER FOOTPRINT
P
U
H
ZONE V
inches
10_DRAFT
CASE 466 - 03
ISSUE D
PLD- 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MRF1511NT1
12
RF Device Data
Freescale Semiconductor
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MRF1511NT1
Document
Number:
RF
Device
Data MRF1511N
Rev. 6, 9/2006
Freescale
Semiconductor
13