MOTOROLA MRF148

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by MRF148/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 175 MHz.
• Superior High Order IMD
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)
30 W, to 175 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
• IMD(d3) (30 W PEP) — – 35 dB (Typ)
• IMD(d11) (30 W PEP) — – 60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
G
CASE 211–07, STYLE 2
S
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
120
Vdc
Drain–Gate Voltage
VDGO
120
Vdc
VGS
± 40
Vdc
Drain Current — Continuous
ID
6.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
115
0.66
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
1.52
°C/W
Gate–Source Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1995
MRF148
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA)
V(BR)DSS
125
—
—
Vdc
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
IDSS
—
—
1.0
mAdc
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
IGSS
—
—
100
nAdc
Gate Threshold Voltage (VDS = 10 V, ID = 10 mA)
VGS(th)
1.0
3.0
5.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 2.5 A)
VDS(on)
1.0
3.0
5.0
Vdc
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
gfs
0.8
1.2
—
mhos
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
—
50
—
pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
—
35
—
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
—
8.0
—
pF
Gps
—
—
18
15
—
—
dB
η
—
—
40
50
—
—
%
IMD(d3)
IMD(d11)
—
—
– 35
– 60
—
—
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 30 W (PEP), IDQ = 100 mA)
Drain Efficiency
(VDD = 50 V, f = 30 MHz, IDQ = 100 mA)
(30 MHz)
(175 MHz)
(30 W PEP)
(30 W CW)
Intermodulation Distortion
(VDD = 50 V, Pout = 30 W (PEP),
f = 30; 30.001 MHz, IDQ = 100 mA)
dB
ψ
Load Mismatch
(VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz,
IDQ = 100 mA, VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 10 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 1.0 A)
GPS
IMD(d3)
IMD(d9 – 13)
—
—
—
20
– 50
– 70
—
—
—
dB
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
L2
L1
BIAS +
0 – 10 V –
+
C1
C4
C5
C6
C7
–
50 V
R1
DUT
T2
RF
INPUT
T1
R3
RF
OUTPUT
C2
C8
R2
C3
R4
C1, C2, C3, C4, C5, C6 — 0.1 µF Ceramic Chip or Equivalent
C7 — 10 µF, 100 V Electrolytic
C8 — 100 pF Dipped Mica
L1 — VK200 20/4B Ferrite Choke or Equivalent (3.0 µH)
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 200 Ω, 1/2 W Carbon
R3 — 4.7 Ω, 1/2 W Carbon
R4 — 470 Ω, 1.0 W Carbon
T1 — 4:1 Impedance Transformer
T2 — 1:2 Impedance Transformer
Figure 1. 2.0 to 50 MHz Broadband Test Circuit
MRF148
2
MOTOROLA RF DEVICE DATA
15
VDD = 50 V
IDQ = 100 mA
Pout = 30 W (PEP)
10
5
40
VDD = 50 V
20
40 V
IDQ = 100 mA
0
60
VDD = 50 V
40
30 MHz
POWER GAIN (dB)
20
150 MHz
60
Pout , OUTPUT POWER (WATTS)
25
40 V
20
IDQ = 100 mA
2
5
10
20
50
100
0
200
0
0.5
1
1.5
2
2.5
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
150 MHz
d3
– 40
d5
– 50
– 30
d3
d5
10
20
30
Pout, OUTPUT POWER (WATTS PEP)
– 50
0
40
Figure 4. IMD versus Pout
+ BIAS
VDS = 30 V
VDS = 15 V
1000
VDD = 50 V, IDQ = 100 mA, TONE SEPARATION 1 kHz
– 40
f T, UNITY GAIN FREQUENCY (MHz)
2000
– 30
30 MHz
IMD, INTERMODULATION DISTORTION (dB)
0
0
0
1
2
3
ID, DRAIN CURRENT (AMPS)
4
Figure 5. Common Source Unity Gain Frequency
versus Drain Current
R2
+ 50 Vdc
RFC1
0–6 V
C2
C3
C5
C4
L2
D.U.T.
RF INPUT
C7
RF OUTPUT
L1
R1
C6
C1
T1
C1 — 91 pF Unelco Type MCM 01/010
C2, C4 — 0.1 µF Erie Red Cap
C3 — Allen Bradley 680 pF Feed Thru
C5 — 1.0 µF, 50 Vdc Electrolytic
C6 — 15 pF Unelco Type J101
C7 — 24 pF Unelco Type MCM 01/010
L1 — 2 Turns #18 AWG, 5/16″ ID
L2 — 4 Turns #18 AWG, 5/16″ ID
R1 — 1.0 Ohm, 1/4 W Carbon
R2 — 2000 Ohm, 1/4 W Carbon
RFC1 — VK200 21/4B
T1 — 4:1 Transformer, 1.75″ Subminiature
T1 — Coaxial Cable
50 Ω
12.5 Ω
T1 — 4:1 Impedance Ratio
T1 — Transformer, Line
T1 — Impedance = 25 Ω
Figure 6. 150 MHz Test Circuit
MOTOROLA RF DEVICE DATA
MRF148
3
I D , DRAIN CURRENT (AMPS)
I DS , DRAIN CURRENT (AMPS)
2
1
VDS = 10 V
gfs = 1.2 mho
0
0
1
2
3
4
5
6
7
8
VGS, GATE–SOURCE VOLTAGE (VOLTS)
9
10
7
5
3
2
TC = 25°C
1
0.7
0.5
0.3
0.2
10
0.1
0.2
Figure 7. Gate Voltage versus Drain Current
0.4
0.7 1
2
4
7 10
20
40
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
70 100 200
Figure 8. DC Safe Operating Area (SOA)
175
150
50
175
30
15
7.0
ZOL*
f = 2.0 MHz
Zin
4.0
VDD = 50 V
IDQ = 100 mA
Pout = 30 W PEP
Gate Shunted By 100 Ω
f = 2.0 MHz
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
Figure 9. Impedance Coordinates — 50 Ohm
Characteristic Impedance
MRF148
4
MOTOROLA RF DEVICE DATA
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capacitance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operating conditions in RF applications.
DRAIN
Cgd
GATE
Cds
Cgs
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
SOURCE
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data
presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some
extent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified under
specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RCE(sat) =
MOTOROLA RF DEVICE DATA
Drain
Source
Gate
V(BR)DSS
VDGO
ID
IDSS
IGSS
VGS(th)
VDS(on)
Ciss
Coss
gfs
VDS(on)
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r
DS(on) =
ID
IC
MRF148
5
PACKAGE DIMENSIONS
A
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
Q
M
1
DIM
A
B
C
D
E
H
J
K
M
Q
R
S
U
4
R
2
S
B
3
D
K
STYLE 2:
PIN 1.
2.
3.
4.
J
C
H
E
INCHES
MIN
MAX
0.960
0.990
0.370
0.390
0.229
0.281
0.215
0.235
0.085
0.105
0.150
0.108
0.004
0.006
0.395
0.405
40 _
50 _
0.113
0.130
0.245
0.255
0.790
0.810
0.720
0.730
MILLIMETERS
MIN
MAX
24.39
25.14
9.40
9.90
5.82
7.13
5.47
5.96
2.16
2.66
3.81
4.57
0.11
0.15
10.04
10.28
40 _
50 _
2.88
3.30
6.23
6.47
20.07
20.57
18.29
18.54
SOURCE
GATE
SOURCE
DRAIN
SEATING
PLANE
CASE 211–07
ISSUE N
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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MRF148
6
◊
*MRF148/D*
MRF148/D
MOTOROLA RF DEVICE
DATA