Order this document by TPV8100B/D SEMICONDUCTOR TECHNICAL DATA The RF Line The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TPV8100B features high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit. 150 W, 470 – 860 MHz NPN SILICON RF POWER TRANSISTOR • To be used class AB for TV band IV and V. • Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync.) Output Power = 100 Watts (CW) Minimum Gain = 8.5 dB • Specified 32 Volts, 860 MHz Characteristics Output Power = 150 Watts (peak sync.) • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 398–03, STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCER 40 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 4 Vdc Collector–Current — Continuous IC 12 Adc Total Device Dissipation @ 25°C Case Derate above 25°C PD 215 1.25 Watts W/°C Operating Junction Temperature Storage Temperature Range TJ 200 °C Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.8 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 10 mA, Rbe = 75 Ω) V(BR)CER 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 10 mAdc) V(BR)EBO 4 — — Vdc Collector–Base Breakdown Voltage (IE = 20 mAdc) V(BR)CBO 65 — — Vdc ICER — — 10 mA Characteristic OFF CHARACTERISTICS Collector–Emitter Leakage (VCE = 28 V, Rbe = 75 Ω) NOTE: 1. Thermal resistance is determined under specified RF operating condition. (continued) REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 TPV8100B 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit hFE 30 — 120 — Cob — 44 — pF Gp 8.5 9.5 — dB η 55 58 — % Pout 100 110 — W Peak Output Power (synch.) (VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz) Pout 125 135 — W Peak Output Power (synch.) (VCC = 32 V, ICQ = 2 x 25 mA, f = 860 MHz) Pout 150 160 — W Recommended Quiescent Current ICQ — — 2 x 0.3 A Characteristic ON CHARACTERISTICS DC Current Gain (IC = 2 Adc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (each side) (2) (VCB = 28 V, IE = 0, f = 1 MHz) FUNCTIONAL TESTS IN CW (SOUND) Common–Emitter Amplifier Power Gain (VCC = 28 V, Pout = 100 W, ICQ = 2 x 50 mA, f = 860 MHz) Collector Efficiency (VCC = 28 V, Pout = 100 W, IQ = 2 x 50 mA, f = 860 MHz) Output Power @ 1 dB Compression (Pref = 25 W) (VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz) FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL) NOTE: 2. Value of “Cob” is that of die only. It is not measurable in TPV8100B because of internal matching network. Zin 665 860 f = 470 MHz f = 860 MHz 470 ZOL* 0.0 665 Zo = 10 Ω 8 f (MHz) Zin (Ohms) ZOL* (Ohms) 470 665 860 1.95 + j3.67 3.65 + j6.82 6.66 + j13.8 10.0 + j9.50 9.23 + j1.30 4.45 + j5.22 ZOL* = Conjugate of optimum load impedance into which ZOL* = the device operates at a given output power, ZOL* = voltage, current and frequency. NOTE: Zin & ZOL* are given from base–to–base and NOTE: collector–to–collector respectively. Input and Output impedances with circuit tuned for maximum linearity @ VCC = 28 V / ICQ = 2 x 50 mA / Pout = 100 W Figure 1. Series Equivalent Input/Output Impedances TPV8100B 2 MOTOROLA RF DEVICE DATA IN 50 Ω OUT 50 Ω C4 L1 C5 R1 C12 C6 L3 C7 L2 C8 L4 VC VB R2 C1 C2 C9 D.U.T. + C10 + C11 C3 C1, C9 — Chip Capacitor 15 nF C2, C10 — Chip Capacitor 100 nF C3, C11 — Chip Capacitor 100 µF/40 V C4 — Chip Capacitor 15 pF ATC 100A C5 — Chip Capacitor 5.6 pF ATC 100A C6 — Trimmer Capacitor 1–4 pF C7 — Chip Capacitor 12 pF ATC 100B C8 — Chip Capacitor 15 pF ATC 100A C12 — Chip Capacitor 12 pF ATC 100A L1, L3 — Coaxial Wire 25 Ω/85 Mils/40 mm L2, L4 — Printed Board Inductance R1, R2 — Chip Resistor 1 Ω 0805 5% Figure 2. Test Circuit TYPICAL CHARACTERISTICS CW — WIDEBAND 60 9 Pout = 100 W VCE = 28 V ICQ = 2 x 50 mA 8 450 900 η, EFFICIENCY (%) G P, POWER GAIN (dB) 10 50 Pout = 100 W VCE = 28 V ICQ = 2 x 50 mA 40 450 900 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 3. Power Gain versus Frequency Figure 4. Collector Efficiency versus Frequency MOTOROLA RF DEVICE DATA TPV8100B 3 TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz VCE = 28 V 100 IRE 150 Po , OUTPUT POWER (WATTS) Po , OUTPUT POWER (WATTS) 150 100 TEST CONDITIONS: STANDARD BLACK LEVEL CHANNEL 61 ICQ = 2 x 50 mA VCE = 28 V 50 20 VIDEO SIGNAL Black 0 40 2 4 6 8 10 12 Pin, INPUT POWER (WATTS) 14 16 100 TEST CONDITIONS: STANDARD BLACK LEVEL CHANNEL 61 ICQ = 2 x 300 mA VCE = 28 V 50 20 2 4 Figure 5. Peak Output Power versus Peak Input Power Pout = 100 W Pout = 130 W % 100 90 80 70 60 50 40 30 20 10 0 8 10 12 Pin, INPUT POWER (WATTS) 14 16 Figure 6. Peak Output Power versus Peak Input Power TEST CONDITIONS: DIFF. Gain, 10 Steps Channel 61 VCE = 28 V ICQ = 2 x 50 mA 6 100 VIDEO SIGNAL IRE 0 40 ICQ = 2 x 150 mA Pout = 100 W Pout = 130 W % 100 90 80 70 60 50 40 30 20 10 0 ICQ = 2 x 300 mA Pout = 100 W Pout = 110 W Figure 7. Gain versus Output Power TPV8100B 4 MOTOROLA RF DEVICE DATA TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz VCE = 32 V 100 IRE 0 40 VIDEO SIGNAL Black Po , OUTPUT POWER (WATTS) 150 VCE = 32 V, ICQ = 2 x 25 mA 100 TEST CONDITIONS: STANDARD BLACK LEVEL CHANNEL 61 ICQ = 2 x 25 mA VCE = 32 V 50 20 2 4 6 8 10 12 Pin, INPUT POWER (WATTS) 14 16 Pout Gain 25 W 50 W 100 W 120 W 130 W 140 W 150 W 160 W 10.6 dB 11.1 dB 11.3 dB 11.1 dB 11.0 dB 10.7 dB 10.5 dB 10.2 dB (see curve on left) Figure 8. Peak Output Power versus Peak Input Power TEST CONDITIONS: DIFF. Gain, 10 Steps Channel 61 VCE = 32 V ICQ = 2 x 25 mA Pout = 100 W 100 VIDEO SIGNAL IRE 0 40 % % 100 90 80 70 60 50 40 30 20 10 0 100 90 80 70 60 50 40 30 20 10 0 Pout = 130 W Pout = 150 W Figure 9. Differential Gain MOTOROLA RF DEVICE DATA TPV8100B 5 ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ Vb C4 C1 C2 R1 ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ Vc C9 C10 C5 C6 C7 C8 R2 C3 C11 Figure 10. Components View PACKAGE DIMENSIONS –A– U 1 Q 0.025 (0.010) 2 M T A 5 K 4 D G J N E C –T– H B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K N Q U –B– 3 M SEATING PLANE INCHES MIN MAX 1.094 1.110 0.457 0.465 0.165 0.182 0.121 0.131 0.055 0.065 0.177 0.185 0.081 0.091 0.002 0.004 0.142 0.163 0.510 0.520 0.125 0.135 0.844 BSC STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 27.79 28.19 11.61 11.81 4.25 4.62 3.08 3.32 1.40 1.65 4.50 4.69 2.06 2.31 0.06 0.10 3.60 4.14 12.95 13.21 3.18 3.42 21.44 BSC COLLECTOR COLLECTOR BASE BASE EMITTER CASE 398–03 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. TPV8100B 6 ◊ *TPV8100B/D* TPV8100B/D MOTOROLA RF DEVICE DATA