Order this document by MPSH17/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Base Voltage VCBO 20 Vdc Emitter – Base Voltage VEBO 3.0 Vdc PD 350 2.81 mW mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) RqJA 357 °C/W Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 2 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 15 — — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 20 — — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc ICBO — — 100 nAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPSH17 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 25 — 250 — VCE(sat) — — 0.5 — fT 800 — — MHz Collector–Base Capacitance (VCB = 10 Vdc, f = 1.0 MHz) Ccb 0.3 — 0.9 pF Small–Signal Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 30 — — — Noise Figure (IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz) NF — — 6.0 dB Gpe — 24 — dB ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) FUNCTIONAL TEST Amplifier Power Gain (IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz) 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSH17 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR 3 MPSH17 Motorola reserves the right to make changes without further notice to any products herein. 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