Si9426DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 ID (A) 0.0135 @ VGS = 4.5 V 10 0.0160 @ VGS = 2.5 V 9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9426DY Si9426DY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 70_C Operating Junction and Storage Temperature Range V 10 ID 8 IDM 30 IS 2.3 TA = 25_C Maximum Power Dissipationa Unit A 2.5 PD 1.6 W TJ, Tstg - 55 to 150 _C Symbol Limit Unit RthJA 50 _C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70160 S-03950—Rev. E, 26-May-03 www.vishay.com 1 Si9426DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS VDS = 0 V, VGS = "8 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VDS w 5 V, VGS = 4.5 V V 30 mA A VGS = 4.5 V, ID = 10 A 0.0098 0.0135 VGS = 2.5 V, ID = 8 A 0.011 0.0160 gfs VDS = 10 V, ID = 10 A 57 VSD IS = 2.3 A, VGS = 0 V 0.71 1.2 46.5 80 rDS(on) DS( ) nA W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 6 V, VGS = 4.5 V, ID = 10 A Rg tr Fall Time tf Source-Drain Reverse Recovery Time trr nC 13.5 1 td(on) td(off) 5.5 VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W IF = 2.3 A, di/dt = 100 A/ms 3.9 50 100 110 200 150 300 55 100 59 100 W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 70160 S-03950—Rev. E, 26-May-03 Si9426DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 5, 4.5, 4, 3.5, 3, 2.5, 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 1.5 V 6 18 12 TC = 125_C 6 25_C - 55_C 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.5 3.0 Capacitance 6000 5000 0.016 C - Capacitance (pF) r DS(on) - On-Resistance ( Ω ) 2.0 VGS - Gate-to-Source Voltage (V) 0.020 VGS = 2.5 V 0.012 VGS = 4.5 V 0.008 0.004 4000 Ciss 3000 2000 Coss Crss 1000 0.000 0 0 6 12 18 24 0 30 ID - Drain Current (A) 2 4 6 8 10 12 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.8 VDS = 6 V ID = 10 A 4 1.6 r DS(on) - On-Resistance ( Ω ) (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 3 2 1 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Document Number: 70160 S-03950—Rev. E, 26-May-03 50 60 VGS = 4.5 V ID = 10 A 1.4 1.2 1.0 0.8 0.6 - 50 0 50 100 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si9426DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) - On-Resistance ( Ω ) I S - Source Current (A) 30 TJ = 150_C 10 0.04 0.03 0.02 ID = 10 A 0.01 TJ = 25_C 0.00 1 0 0.2 0.4 0.6 0.8 0 1.0 VSD - Source-to-Drain Voltage (V) 2 6 8 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.6 100 0.4 80 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 4 - 0.0 60 40 - 0.2 20 - 0.4 - 0.6 - 50 0 0 50 100 150 0.01 0.1 1 TJ - Temperature (_C) 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70160 S-03950—Rev. E, 26-May-03 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1