VISHAY SI2304DS

Si2304DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
VDS (V)
30
rDS(on) ()
ID (A)
0.117 @ VGS = 10 V
2.5
0.190 @ VGS = 4.5 V
2.0
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2304DS (A4)*
*Marking Code
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150C)a
Pulsed Drain
TA= 25C
TA= 70C
Currentb
Continuous Source Current (Diode Conduction)a
TA= 25C
Power Dissipationa
TA= 70C
Operating Junction and Storage Temperature Range
Unit
V
2.5
ID
2.0
A
IDM
10
IS
1.25
1.25
PD
W
0.80
TJ, Tstg
–55 to 150
C
Symbol
Limit
Unit
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Ambientc
100
C/W
RthJA
166
Notes
a. Surface Mounted on FR4 Board, t 5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board.
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Document Number: 70756
S-63633—Rev. D, 01-Nov-99
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Si2304DS
Vishay Siliconix
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
VGS(th)
VDS = VGS, ID = 250 mA
1.5
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 30 V, VGS = 0 V
0.5
VDS = 30 V, VGS = 0 V, TJ = 55C
10
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Z
Zero
Gate
G
Voltage
V l
Drain
D i Current
C
IDSS
V
VDS = 30 V, VGS = 1.0 V, TJ =25C
On-State Drain Currenta
Drain-Source On-Resistancea
ID(on)
nA
mA
A
1
VDS w 4.5 V, VGS = 10 V
6
VDS w 4.5 V, VGS = 4.5 V
4
A
VGS = 10 V, ID = 2.5 A
0.092
0.117
VGS = 4.5 V, ID = 2.0 A
0.142
0.190
rDS(on)
Forward Transconductancea
gfs
VDS = 4.5 V, ID = 2.5 A
4.6
Diode Forward Voltage
VSD
IS = 1.25 A, VGS = 0 V
0.77
1.2
Qg
VDS = 15 V, VGS = 5 V, ID = 2.5 A
2.4
4
10
W
S
V
Dynamic
Gate Charge
Total Gate Charge
Qgt
4.5
Gate-Source Charge
Qgs
0.8
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15 V
V, VGS = 10 V
V, ID = 2.5
25A
nC
C
1.0
240
VDS = 15 V
V, VGS = 0 V,
V f = 1 MHz
MH
110
pF
F
17
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
8
20
tr
12
30
17
35
8
20
td(off)
tf
VDD = 15 V
V,, RL = 15 W
ID ^ 1 A,
A VGEN = 10 V
V, RG = 6 W
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
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Document Number: 70756
S-63633—Rev. D, 01-Nov-99
Si2304DS
Vishay Siliconix
Output Characteristics
10
Transfer Characteristics
10
VGS = 10 V - 5 V
8
I D – Drain Current (A)
I D – Drain Current (A)
8
4V
6
4
2
6
4
TC = 125C
2
0V
25C
3V
–55C
>
0
0
0
2
4
6
8
10
0
1
2
3
4
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Capacitance
0.30
500
0.24
400
C – Capacitance (pF)
r DS(on)– On-Resistance ( )
On-Resistance vs. Drain Current
VGS = 4.5 V
0.18
0.12
5
VGS = 10 V
0.06
300
Ciss
200
Coss
100
Crss
0
0
0
2
4
6
8
10
0
6
12
18
24
30
0
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
10
1.8
1.6
8
r DS(on)– On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
VDS = 15 V
ID = 2.5 A
6
4
2
0
0
1
2
3
Qg – Total Gate Charge (nC)
Document Number: 70756
S-63633—Rev. D, 01-Nov-99
4
5
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 2.5 A
1.4
1.2
1.0
0.8
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
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Si2304DS
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
10
TJ = 150C
r DS(on)– On-Resistance ( W )
I S – Source Current (A)
0.5
TJ = 25C
0.4
0.3
ID = 2.5 A
0.2
0.1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
VSD – Source-to-Drain Voltage (V)
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
Threshold Voltage
0.3
10
0.2
8
–0.0
ID = 250 mA
Power (W)
V GS(th) Variance (V)
0.1
–0.1
–0.2
6
TC = 25C
Single Pulse
4
–0.3
–0.4
2
–0.5
–0.6
–50
–25
0
25
50
75
100
125
0
0.01
150
0.10
TJ – Temperature (C)
1.00
10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70756
S-63633—Rev. D, 01-Nov-99
Legal Disclaimer Notice
Vishay
Notice
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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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Document Number: 91000
Revision: 08-Apr-05
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