Ordering number:ENN6479 PNP Epitaxial Planar Silicon Transistor CPH5505 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2182 Features [CPH5505] 2.9 4 0.15 3 2.8 0.05 0.6 1.6 0.6 5 0.2 · Composite type with two PNP transistors contained in a single package facilitating high-density mounting. · The CPH5505 consists of two chips which are equivalent to the CPH3109 encapsulated in a package. · Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). 1 2 0.4 1 : Collector 2 : Collector 3 : Base 4 : Emitter Common 5 : Base SANYO : CPH5 0.9 0.7 0.2 0.95 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO VEBO –30 V –5 V IC –3 A ICP –5 Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current IB Collector Dissipation PC Total Dissipation Junction Temperature PT Tj Storage Temperature Tstg A –600 mA Mounted on a ceramic board (600mm2×0.8mm) 0.9 W Mounted on a ceramic board (600mm2×0.8mm) 1.2 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=–30V, IE=0 –0.1 µA Emitter Cutoff Current IEBO VEB=–4V, IC=0 –0.1 µA DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=–2V, IC=–500mA VCE=–10V, IC=–500mA Output Capacitance 200 560 380 MHz 25 pF VCB=–10V, f=1MHz Marking CPH5505 : EE Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2000TS (KOTO) TA-2845 No.6479–1/4 CPH5505 Continued from preceding page. Ratings Parameter Symbol Collector-to-Emitter Saturation Voltage Conditions min typ max Unit VCE(sat)1 IC=–1.5A, IB=–30mA –155 –230 mV VCE(sat)2 IC=–1.5A, IB=–75mA –105 –155 mV VBE(sat) IC=–1.5A, IB=–30mA –0.83 –1.2 V Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CBO IC=–10µA, IE=0 –30 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO IC=–10µA, IC=0 –30 V Emitter-to-Base Breakdown Voltage –5 V Turn-ON Time ton See specified Test Circuit. 50 ns Storage Time tstg See specified Test Circuit. 270 ns tf See specified Test Circuit. 25 ns Turn-OFF Time Electrical Connection B1 EC Switching Time Test Circuit IB1 PW=20µs D.C.≤1% B2 IB2 INPUT RB C1 24 VR10 C2 + 50Ω + 100µF 470µF 5V –12V –20IB1=20IB2=IC=–500mA IC -- VCE VCE=--2V --3.5 --8mA --6mA --4mA --0.8 --2mA --0.4 --3.0 --2.5 --2.0 --1.5 Ta=7 5°C 25°C --25° C A --50m Collector Current, IC – A --3 0 0 --2 --1.6 --1.2 IC -- VBE --4.0 --10mA mA mA --40mA Collector Current, IC – A --2.0 --1.0 --0.5 IB=0 0 0 --200 --400 --600 --800 Collector-to-Emitter Voltage, VCE – V Ta=75°C 3 25°C --25°C 2 Collector-to-Emitter Saturation Voltage, VCE (sat) – V 5 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 --0.2 5 7 --10 IT01745 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V VCE=--2V 7 DC Current Gain, hFE 0 IT01743 hFE -- IC 1000 10 --0.01 0 --1000 --1.2 IT01744 VCE(sat) -- IC --1.0 7 5 IC / IB=20 3 2 --0.1 7 5 7 Ta= 3 2 5°C °C --25 °C 25 --0.01 7 5 3 2 --0.001 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 5 7 --10 IT01746 No.6479–2/4 CPH5505 VCE(sat) -- IC --1.0 7 5 3 2 C =75° Ta 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Gain-Bandwidth Product, f T – MHz 100 7 5 3 2 3 5 7 2 --10 3 Collector-to-Base Voltage, VCB – V 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT01748 f T -- IC VCE= --10V 7 5 3 2 100 7 5 3 2 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC – mA 2 3 IT01750 PC -- Ta 10 0m s op era 3 2 Collector Dissipation, PC – W s 0µ 10 s DC ms 1.2 s 0µ 1m 10 tio n Ta=25°C Single pulse 1unit Mounted on a ceramic board(600mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 1.0 0.9 To t al 0.8 1u nit 0.6 di ss ip ati on 0.4 0.2 0 2 Collector-to-Emitter Voltage, VCE – V 3 5 IT01751 Mounted on a ceramic board(600mm2×0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT01820 PC(TR2) -- PC(TR1) 1.0 Collector Dissipation, PC(TR2) – W 25°C 3 IT01749 50 Collector Current, IC – A 75°C 5 1.4 IC= --3A --1.0 7 5 3 2 Ta= --25°C 7 ICP= --5A 3 2 --0.1 7 5 --1.0 10 --10 5 ASO --10 7 5 2 1000 f=1MHz 2 3 Collector Current, IC – A Cob -- VCB 10 --1.0 5 --0.1 --0.01 5 7 --10 IT01747 Collector Current, IC – A 2 Output Capacitance, Cob – pF C C 2 --0.01 --0.01 25° ° --25 IC / IB=50 7 3 2 --0.1 7 5 VBE(sat) -- IC --10 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE (sat) – V Collector-to-Emitter Saturation Voltage, VCE (sat) – V --10 7 5 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1unit Mounted on a ceramic board(600mm2×0.8mm) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector Dissipation, PC(TR1) – W 0.9 1.0 IT01821 No.6479–3/4 CPH5505 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice. PS No.6479–4/4