Ordering number : ENN7170 CPH5508 NPN Epitaxial Planar Silicon Transistor CPH5508 High-Current Switching Applications Applications • Package Dimensions Inverters, Relay drivers, Lamp drivers, Motor drivers, Strobes. unit : mm 2162 [CPH5508] 2.9 0.15 0.6 3 2.8 0.05 1 2 0.95 0.4 1 : Collector(TR1) 2 : Collector(TR2) 3 : Base(TR2) 4 : Emitter Common 5 : Base(TR1) Specifications 0.4 Absolute Maximum Ratings at Ta=25°C Parameter 0.9 0.7 0.2 • Composite type with 2 NPN transistors in one package facilitating high-density mounting. The CPH5508 is composed of 2 CPH3216 equivaient chips . Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). 4 1.6 • 5 0.6 • Symbol 0.2 Features SANYO : CPH5 Conditions Ratings Unit Collector-to-Base Voltage VCBO 100 V Collector-to-Emitter Voltage VCES 100 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 5 V IC 1 A Collector Current Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.9 W Total Dissipation PT Mounted on a ceramic board (600mm2✕0.8mm) 1.2 W 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg 3 200 A mA Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Conditions VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA Ratings min typ 200 VCE=10V, IC=300mA VCB=10V, f=1MHz Unit max 0.1 µA 0.1 µA 560 420 6 Note : The specifications shown above are for each individual transistor. Marking : EH MHz pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11502 TS IM TA-3493 No.7170-1/4 CPH5508 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Storage Time min IC=500mA, IB=10mA IC=500mA, IB=10mA IC=10µA, IE=0 IC=100µA, RBE=0 Unit max 130 190 mV 0.81 1.2 V 100 IC=1mA, RBE=∞ IE=10µA, IC=0 V 100 V 50 V 6 V See specified Test Circuit. 35 See specified Test Circuit. 330 ns tf See specified Test Circuit. 40 ns Switching Time Test Circuit ns Electrical Connection IB1 PW=20µs D.C.≤1% typ ton tstg Fall Time INPUT Ratings Conditions B1 EC B2 OUTPUT IB2 RB VR RL 50Ω + 470µF + 100µF VBE= --5V C1 C2 VCC=25V IC=20IB1= --20IB2=500mA IC -- VCE 1000 30mA VCE=2V 0.9 6mA 4mA 600 2mA 400 0.8 0.7 0.6 0.5 0.4 0.3 °C 25°C --25°C Collector Current, IC -- A A 8mA 20m 800 50mA 0.2 200 Ta=7 5 Collector Current, IC -- mA 40mA IC -- VBE 1.0 10mA 0.1 IB=0 0 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 0.6 0.8 1.0 3 25°C 100 7 5 3 2 1.2 IT01646 f T -- IC VCE=10V 3 Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE 0.4 5 Ta=75°C --25°C 0.2 Base-to-Emitter Voltage, VBE -- V VCE=2V 7 2 0 IT01644 hFE -- IC 1000 5 0 1.0 2 1000 7 5 3 2 100 7 5 3 10 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT01648 2 0.01 2 3 5 7 0.1 2 3 5 7 Collector Current, IC -- A 1.0 2 3 IT01650 No.7170-2/4 CPH5508 Cob -- VCB 100 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 3 2 10 7 5 IC / IB=20 7 7 5 VCE(sat) -- IC 1.0 f=1MHz 3 2 0.1 7 5 75°C Ta= C --25° 3 2 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 0.1 75°C 7 Ta= 5 25° C --25°C 3 2 0.01 0.01 2 3 5 7 2 0.1 3 5 1.0 IT01656 ICP=3A 3 Collector Current, IC -- A DC 3 op ms 0m er 2 10 10 s ati on 0.1 7 5 3 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 1unit 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 3 5 7 1.0 IT01654 5 3 2 1.0 Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 2 0.1 3 5 7 1.0 IT01658 PC -- Ta 1.2 µs µs 00 s 5 0µ s 50 1.0 7 5 10 1m IC=1A 3 IC / IB=50 1.4 10µs 2 2 0.1 Collector Current, IC -- A ASO 5 7 VBE(sat) -- IC 0.1 0.01 7 Collector Current, IC -- A 5 7 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 10 IC / IB=50 7 2 C Collector Current, IC -- A VCE(sat) -- IC 1.0 1.0 To t 0.9 0.8 al 0.6 1u di ss ip nit ati on 0.4 0.2 Mounted on a ceramic board (600mm2✕0.8mm) 0 5 7 IT04223 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02364 PC(TR2) -- PC(TR1) 1.0 Collector Dissipation, PC(TR2) -- W 0.01 0.01 5 7 100 IT01652 25° 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Mounted on a ceramic board (600mm2✕0.8mm) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector Dissipation, PC(TR1) -- W 0.9 1.0 IT02365 No.7170-3/4 CPH5508 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS No.7170-4/4