SANYO CPH5508

Ordering number : ENN7170
CPH5508
NPN Epitaxial Planar Silicon Transistor
CPH5508
High-Current Switching Applications
Applications
•
Package Dimensions
Inverters, Relay drivers, Lamp drivers, Motor drivers,
Strobes.
unit : mm
2162
[CPH5508]
2.9
0.15
0.6
3
2.8
0.05
1
2
0.95
0.4
1 : Collector(TR1)
2 : Collector(TR2)
3 : Base(TR2)
4 : Emitter Common
5 : Base(TR1)
Specifications
0.4
Absolute Maximum Ratings at Ta=25°C
Parameter
0.9
0.7
0.2
•
Composite type with 2 NPN transistors in one
package facilitating high-density mounting.
The CPH5508 is composed of 2 CPH3216 equivaient
chips .
Ultrasmall package facilitates miniaturization
in end products (mounting height : 0.9mm).
4
1.6
•
5
0.6
•
Symbol
0.2
Features
SANYO : CPH5
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
100
V
Collector-to-Emitter Voltage
VCES
100
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
5
V
IC
1
A
Collector Current
Collector Current (Pulse)
Base Current
ICP
IB
Collector Dissipation
PC
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
0.9
W
Total Dissipation
PT
Mounted on a ceramic board (600mm2✕0.8mm)
1.2
W
150
°C
--55 to +150
°C
Junction Temperature
Tj
Storage Temperature
Tstg
3
200
A
mA
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
ICBO
IEBO
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
Conditions
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100mA
Ratings
min
typ
200
VCE=10V, IC=300mA
VCB=10V, f=1MHz
Unit
max
0.1
µA
0.1
µA
560
420
6
Note : The specifications shown above are for each individual transistor.
Marking : EH
MHz
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3493 No.7170-1/4
CPH5508
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
Storage Time
min
IC=500mA, IB=10mA
IC=500mA, IB=10mA
IC=10µA, IE=0
IC=100µA, RBE=0
Unit
max
130
190
mV
0.81
1.2
V
100
IC=1mA, RBE=∞
IE=10µA, IC=0
V
100
V
50
V
6
V
See specified Test Circuit.
35
See specified Test Circuit.
330
ns
tf
See specified Test Circuit.
40
ns
Switching Time Test Circuit
ns
Electrical Connection
IB1
PW=20µs
D.C.≤1%
typ
ton
tstg
Fall Time
INPUT
Ratings
Conditions
B1
EC
B2
OUTPUT
IB2
RB
VR
RL
50Ω
+
470µF
+
100µF
VBE= --5V
C1
C2
VCC=25V
IC=20IB1= --20IB2=500mA
IC -- VCE
1000
30mA
VCE=2V
0.9
6mA
4mA
600
2mA
400
0.8
0.7
0.6
0.5
0.4
0.3
°C
25°C
--25°C
Collector Current, IC -- A
A
8mA
20m
800
50mA
0.2
200
Ta=7
5
Collector Current, IC -- mA
40mA
IC -- VBE
1.0
10mA
0.1
IB=0
0
0
0.2
0.4
0.6
0.8
Collector-to-Emitter Voltage, VCE -- V
0.6
0.8
1.0
3
25°C
100
7
5
3
2
1.2
IT01646
f T -- IC
VCE=10V
3
Gain-Bandwidth Product, f T -- MHz
DC Current Gain, hFE
0.4
5
Ta=75°C
--25°C
0.2
Base-to-Emitter Voltage, VBE -- V
VCE=2V
7
2
0
IT01644
hFE -- IC
1000
5
0
1.0
2
1000
7
5
3
2
100
7
5
3
10
0.01
2
3
5
7
0.1
2
3
5
Collector Current, IC -- A
7
1.0
2
3
IT01648
2
0.01
2
3
5
7
0.1
2
3
5
7
Collector Current, IC -- A
1.0
2
3
IT01650
No.7170-2/4
CPH5508
Cob -- VCB
100
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
3
2
10
7
5
IC / IB=20
7
7
5
VCE(sat) -- IC
1.0
f=1MHz
3
2
0.1
7
5
75°C
Ta=
C
--25°
3
2
3
2
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
0.1
75°C
7
Ta=
5
25°
C
--25°C
3
2
0.01
0.01
2
3
5
7
2
0.1
3
5
1.0
IT01656
ICP=3A
3
Collector Current, IC -- A
DC
3
op
ms
0m
er
2
10
10
s
ati
on
0.1
7
5
3
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
2
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
Collector-to-Emitter Voltage, VCE -- V
3
5
7 1.0
IT01654
5
3
2
1.0
Ta= --25°C
7
75°C
5
25°C
3
2
2
3
5
7
2
0.1
3
5
7 1.0
IT01658
PC -- Ta
1.2
µs
µs
00
s 5
0µ
s
50
1.0
7
5
10
1m
IC=1A
3
IC / IB=50
1.4
10µs
2
2
0.1
Collector Current, IC -- A
ASO
5
7
VBE(sat) -- IC
0.1
0.01
7
Collector Current, IC -- A
5
7
Collector Dissipation, PC -- W
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
10
IC / IB=50
7
2
C
Collector Current, IC -- A
VCE(sat) -- IC
1.0
1.0
To
t
0.9
0.8
al
0.6
1u
di
ss
ip
nit
ati
on
0.4
0.2
Mounted on a ceramic board (600mm2✕0.8mm)
0
5 7
IT04223
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02364
PC(TR2) -- PC(TR1)
1.0
Collector Dissipation, PC(TR2) -- W
0.01
0.01
5 7 100
IT01652
25°
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Mounted on a ceramic board (600mm2✕0.8mm)
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Collector Dissipation, PC(TR1) -- W
0.9
1.0
IT02365
No.7170-3/4
CPH5508
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
PS No.7170-4/4