SANYO MCH6702

Ordering number : ENN6684A
MCH6702
PNP Epitaxial Planar Silicon Transistor
Schottky Barrier Diode
MCH6702
DC/DC Converter Applications
unit : mm
2191A
0.25
[MCH6702]
0.3
4
5
6
3 2
0.65
1
0.15
0.07
•
Composite type with a PNP transistor and
a Schottky barrier diode contained in one
package facilitatiing high-density mounting.
The MCH6702 consists of two chips which
are equivaient to the MCH6101 and SBS006,
respectively.
The ultrasmall package facilitates
miniaturization in end products. (mounting
height 0.85mm).
1.6
•
Package Dimensions
0.25
•
2.1
Features
2.0
6
5
4
1
2
3
0.85
(Bottom view)
(Top view)
1 : Base
2 : Emitter
3 : Anode
4 : Common(Collector/Cathode)
5 : Common(Collector/Cathode)
6 : Common(Collector/Cathode)
SANYO : MCPH6
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
VCEO
--15
V
Collector-to-Emitter Voltage
--15
V
Emitter-to-Base Voltage
VEBO
--5
V
--1.5
A
Collector Current
IC
Collector Current (Pulse)
ICP
--3
Base Current
--300
Collector Dissipation
IB
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Mounted on a ceramic board(600mm2✕0.8mm)
A
mA
1.0
W
150
°C
--55 to +125
°C
V
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
Non-repetitive Peak Reverse Surge Voltage
VRSM
30
V
IO
0.7
A
Average Output Current
Surge Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
50Hz sine wave, 1 cycle
10
A
--55 to +125
°C
--55 to +125
°C
Marking : PB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20502 TS IM / O1000 TS IM TA-3025 No.6684-1/4
MCH6702
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Rathings
Conditions
min
typ
Unit
max
[TR]
Collector Cutoff Current
ICBO
IEBO
Emitter Cutoff Current
DC Current Gain
VCB=--12V, IE=0
VEB=--4V, IC=0
µA
µA
Gain-Bandwidth Product
hFE
fT
VCE=--2V, IC=--100mA
VCE=--2V, IC=--300mA
Output Capacitance
Cob
VCE(sat)
VCB=--10V, f=1MHz
IC=--750mA, IB=--15mA
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
IC=--750mA, IB=--15mA
IC=--10µA, IE=0
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V(BR)EBO
ton
IC=--1mA, RBE=∞
IE=--10µA, IC=0
See specified Test Circuit
50
ns
Storage Time
tstg
See specified Test Circuit
90
ns
tf
See specified Test Circuit
15
ns
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Fall Time
200
--0.1
---0.1
560
350
MHz
17
pF
---120
---180
---0.85
---1.2
mV
V
---15
V
---15
V
---5
V
[Di]
Reverse Voltage
Forward Voltage
VR
VF1
IR=0.5mA
IF=0.3A
VF2
VF3
IF=0.5A
IF=0.7A
Reverse Current
IR
Interterminal Capacitance
C
Reverse Recovery Time
trr
30
V
0.35
VR=10V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
0.40
V
0.42
0.47
V
0.5
0.55
V
200
µA
20
pF
10
ns
Electrical Connection
6
1
2
3
Switching Time Test Circuit
[TR]
IB2
PW=20µs
D.C.≤1%
Duty≤10%
OUTPUT
100mA
INPUT
trr Specified Circuit
[Di]
IB1
VR
RB
50Ω
RL
100Ω
10µs
50Ω
+
220µF
+
470µF
10Ω
10mA
5
100mA
4
--5V
trr
VBE=5V
VCC= --5V
IC= --20IB1=20IB2= --750mA
No.6684-2/4
MCH6702
IC -- VBE
--1.0
[TR]
DC Current Gain, hFE
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
f T -- IC
1000
25°C
7
5
3
2
10
7
5
7 --0.1
2
3
5
7 --1.0
2
100
7
5
3
3
Collector Current, IC -- A
5
IT01662
Cob -- VCB
[TR]
f=1MHz
7
2
5
3
2
10
7
5
3
2
2
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
C
5°
=7
Ta
3
5
--2
2
2
3
5
7 --0.1
°C
25
°C
2
3
5
7 --1.0
Collector Current, IC -- A
3
[TR]
2
Ta= --25°C
7
75°C
5
25°C
3
3
2
--100
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
7
Ta=
5
2
3
IT01667
°C
25
°
--25
C
3
2
3
2
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
IT01666
ASO
[TR]
ICP= --3A
10
10
IC= --1.5A
0µ
50
ms
1
DC 00m
op s
era
tio
n
--1.0
7
5
s
0µ
s
1m
s
3
2
--0.1
7
5
2
3
5°C
7
3
2
2
[TR]
5
--10
7
5
Collector Current, IC -- A
3
3
IT01664
Collector Current, IC -- A
5
--1.0
2
--10
IC / IB=50
--10
7
--0.01
IC / IB=50
7
7
VCE(sat) -- IC
IT01665
VBE(sat) -- IC
--10
2
5
7
3
5
3
--1000
5
7
2
Collector-to-Base Voltage, VCB -- V
[TR]
IC / IB=20
--100
1.0
--1.0
3
IT01663
VCE(sat) -- IC
--1000
--0.1
--0.01
5
100
3
--10
7
--0.01
3
[TR]
5
10
--0.01
2
IT01661
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
--25°C
100
1.0
--0.01
--1.2
VCE= --2V
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Ta=75°C
3
2
--0.1
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
[TR]
VCE= --2V
3
2
--0.8
Ta=75°C
25°C
--25°C
Collector Current, IC -- A
--0.9
0
hFE -- IC
1000
7
5
VCE= --2V
Ta=25°C
Single pulse
Mounted on a ceramic board(600mm2✕0.8mm)
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Collector-to-Emitter Voltage, VCE -- V
2
3
IT02478
No.6684-3/4
MCH6702
PC -- Ta
1.4
[TR]
7
ce
ram
0.6
ic
bo
ard
(60
0m
0.4
m2
✕0
0.1
7
5
3
.8m
0.2
2
75°C
na
3
C
do
25°
nte
C
ou
0.8
5
50°
M
0°C
1.0
Ta=
125
°C 10
Forward Current, IF -- A
Collector Dissipation, PC -- W
[SBD]
1.0
1.2
2
m)
0
0.01
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
IT01669
IR -- VR
[SBD]
100
7
5
3
2
°C
125
10
7
5
3
2
Ta=
100°C
1.0
7
5
3
2
75°C
50°C
0.1
7
5
3
2
0.01
25°C
0
5
10
15
20
Reverse Voltage, VR -- V
25
0
160
30
IT01671
0.2
0.4
0.6
0.8
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
0
Reverse Current, IR -- mA
IF -- VF
2
PF(AV) -- IO
0.7
0.6
0.5
IT01670
qRectangular wave θ=60°
wRectangular wave θ=120°
eRectangular wave θ=180°
rSine wave θ=180°
q
Rectangular wave
[SBD]
e
w r
0.4
θ
0.3
360°
0.2
Sine wave
0.1
180°
0
0
360°
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Average Rectified Current, IO -- A
0.8
0.9
IT01672
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2002. Specifications and information herein are subject
to change without notice.
PS No.6684-4/4