Ordering number : ENN6684A MCH6702 PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode MCH6702 DC/DC Converter Applications unit : mm 2191A 0.25 [MCH6702] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting. The MCH6702 consists of two chips which are equivaient to the MCH6101 and SBS006, respectively. The ultrasmall package facilitates miniaturization in end products. (mounting height 0.85mm). 1.6 • Package Dimensions 0.25 • 2.1 Features 2.0 6 5 4 1 2 3 0.85 (Bottom view) (Top view) 1 : Base 2 : Emitter 3 : Anode 4 : Common(Collector/Cathode) 5 : Common(Collector/Cathode) 6 : Common(Collector/Cathode) SANYO : MCPH6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO VCEO --15 V Collector-to-Emitter Voltage --15 V Emitter-to-Base Voltage VEBO --5 V --1.5 A Collector Current IC Collector Current (Pulse) ICP --3 Base Current --300 Collector Dissipation IB PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board(600mm2✕0.8mm) A mA 1.0 W 150 °C --55 to +125 °C V [SBD] Repetitive Peak Reverse Voltage VRRM 30 Non-repetitive Peak Reverse Surge Voltage VRSM 30 V IO 0.7 A Average Output Current Surge Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 10 A --55 to +125 °C --55 to +125 °C Marking : PB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20502 TS IM / O1000 TS IM TA-3025 No.6684-1/4 MCH6702 Electrical Characteristics at Ta=25°C Parameter Symbol Rathings Conditions min typ Unit max [TR] Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain VCB=--12V, IE=0 VEB=--4V, IC=0 µA µA Gain-Bandwidth Product hFE fT VCE=--2V, IC=--100mA VCE=--2V, IC=--300mA Output Capacitance Cob VCE(sat) VCB=--10V, f=1MHz IC=--750mA, IB=--15mA Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO IC=--750mA, IB=--15mA IC=--10µA, IE=0 Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton IC=--1mA, RBE=∞ IE=--10µA, IC=0 See specified Test Circuit 50 ns Storage Time tstg See specified Test Circuit 90 ns tf See specified Test Circuit 15 ns Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Fall Time 200 --0.1 ---0.1 560 350 MHz 17 pF ---120 ---180 ---0.85 ---1.2 mV V ---15 V ---15 V ---5 V [Di] Reverse Voltage Forward Voltage VR VF1 IR=0.5mA IF=0.3A VF2 VF3 IF=0.5A IF=0.7A Reverse Current IR Interterminal Capacitance C Reverse Recovery Time trr 30 V 0.35 VR=10V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit 0.40 V 0.42 0.47 V 0.5 0.55 V 200 µA 20 pF 10 ns Electrical Connection 6 1 2 3 Switching Time Test Circuit [TR] IB2 PW=20µs D.C.≤1% Duty≤10% OUTPUT 100mA INPUT trr Specified Circuit [Di] IB1 VR RB 50Ω RL 100Ω 10µs 50Ω + 220µF + 470µF 10Ω 10mA 5 100mA 4 --5V trr VBE=5V VCC= --5V IC= --20IB1=20IB2= --750mA No.6684-2/4 MCH6702 IC -- VBE --1.0 [TR] DC Current Gain, hFE --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V f T -- IC 1000 25°C 7 5 3 2 10 7 5 7 --0.1 2 3 5 7 --1.0 2 100 7 5 3 3 Collector Current, IC -- A 5 IT01662 Cob -- VCB [TR] f=1MHz 7 2 5 3 2 10 7 5 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 C 5° =7 Ta 3 5 --2 2 2 3 5 7 --0.1 °C 25 °C 2 3 5 7 --1.0 Collector Current, IC -- A 3 [TR] 2 Ta= --25°C 7 75°C 5 25°C 3 3 2 --100 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 7 Ta= 5 2 3 IT01667 °C 25 ° --25 C 3 2 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 IT01666 ASO [TR] ICP= --3A 10 10 IC= --1.5A 0µ 50 ms 1 DC 00m op s era tio n --1.0 7 5 s 0µ s 1m s 3 2 --0.1 7 5 2 3 5°C 7 3 2 2 [TR] 5 --10 7 5 Collector Current, IC -- A 3 3 IT01664 Collector Current, IC -- A 5 --1.0 2 --10 IC / IB=50 --10 7 --0.01 IC / IB=50 7 7 VCE(sat) -- IC IT01665 VBE(sat) -- IC --10 2 5 7 3 5 3 --1000 5 7 2 Collector-to-Base Voltage, VCB -- V [TR] IC / IB=20 --100 1.0 --1.0 3 IT01663 VCE(sat) -- IC --1000 --0.1 --0.01 5 100 3 --10 7 --0.01 3 [TR] 5 10 --0.01 2 IT01661 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz --25°C 100 1.0 --0.01 --1.2 VCE= --2V 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=75°C 3 2 --0.1 Base-to-Emitter Saturation Voltage, VBE(sat) -- V [TR] VCE= --2V 3 2 --0.8 Ta=75°C 25°C --25°C Collector Current, IC -- A --0.9 0 hFE -- IC 1000 7 5 VCE= --2V Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE -- V 2 3 IT02478 No.6684-3/4 MCH6702 PC -- Ta 1.4 [TR] 7 ce ram 0.6 ic bo ard (60 0m 0.4 m2 ✕0 0.1 7 5 3 .8m 0.2 2 75°C na 3 C do 25° nte C ou 0.8 5 50° M 0°C 1.0 Ta= 125 °C 10 Forward Current, IF -- A Collector Dissipation, PC -- W [SBD] 1.0 1.2 2 m) 0 0.01 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IT01669 IR -- VR [SBD] 100 7 5 3 2 °C 125 10 7 5 3 2 Ta= 100°C 1.0 7 5 3 2 75°C 50°C 0.1 7 5 3 2 0.01 25°C 0 5 10 15 20 Reverse Voltage, VR -- V 25 0 160 30 IT01671 0.2 0.4 0.6 0.8 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0 Reverse Current, IR -- mA IF -- VF 2 PF(AV) -- IO 0.7 0.6 0.5 IT01670 qRectangular wave θ=60° wRectangular wave θ=120° eRectangular wave θ=180° rSine wave θ=180° q Rectangular wave [SBD] e w r 0.4 θ 0.3 360° 0.2 Sine wave 0.1 180° 0 0 360° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Average Rectified Current, IO -- A 0.8 0.9 IT01672 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2002. Specifications and information herein are subject to change without notice. PS No.6684-4/4