SKiiP 31 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) (Chopper see SKiiP 22 NAB 12) Values Units 1200 ± 20 45 / 30 90 / 60 38 / 26 76 / 52 V V A A A A 1500 35 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 V A A A2s °C °C V Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Bridge Rectifier VRRM Theatsink = 80 °C ID tp = 10 ms; sin. 180 °, Tj = 25 °C IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min. MiniSKiiP 3 SEMIKRON integrated intelligent Power SKiiP 31 NAB 12 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M3 Characteristics Symbol Conditions 1) IGBT - Inverter IC = 30 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) IC = 30 A; Tj = 125 °C tr Rgon = Rgoff = 39 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh IGBT - Chopper * VCEsat IC = 15 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V td(on) IC = 15 A; Tj = 125 °C tr Rgon = Rgoff = 82 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh min. typ. max. Units – – – – – – – – V 2,5(3,1) 3,0(3,7) ns 110 55 ns 110 55 ns 600 400 ns 90 45 mJ – 7,8 nF – 2,0 K/W 0,7 – – – – – – – – – V 2,5(3,1) 3,0(3,7) ns 110 55 ns 90 45 ns 600 400 ns 100 70 mJ – 4,0 nF – 1,0 K/W 1,4 – Diode 2) - Inverter (Diode 2) - Chopper see SKiiP 22 NAB 12) V 2,0(1,8) 2,5(2,3) – VF = VEC IF = 25 A Tj = 25 (125) °C V 1,2 1,0 – Tj = 125 °C VTO mΩ 44 32 – Tj = 125 °C rT A – 25 – IF = 25 A, VR = – 600 V IRRM µC – 4,5 – diF/dt = – 500 A/µs Qrr mJ – 1,0 – VGE = 0 V, Tj = 125 °C Eoff K/W 1,2 – – per diode Rthjh Diode - Rectifier VF IF = 35 A, Tj = 25 °C per diode Rthjh Temperature Sensor T = 25 / 100 °C RTS – – 1,2 – – 1,6 1000 / 1670 Mechanical Data 2,5 case to heatsink, SI Units 2 – M1 mechanical outline see page M3 Case B 16 – 9 * For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 12 © by SEMIKRON 0698 UL recognized file no. E63532 • • specification of temperature sensor see part A common characteristics B 16 – 4 Options • also available with powerful chopper. For characteristics please refer to Inverter IGBT 1) 2) Theatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) V K/W Ω Nm B 16 – 57 Fig. 1 Typ. output characteristic, t p = 80 µs; 25 °C Fig. 2 Typ. output characteristic, t p = 80 µs; 125 °C Tj = 125 °C VCE = 600 V VGE = ± 15 V RG = 39 Ω Fig. 3 Turn-on /-off energy = f (IC) Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 35 A Fig. 4 Turn-on /-off energy = f (RG) ICpuls = 35 A Fig. 5 Typ. gate charge characteristic B 16 – 58 VGE = 0 V f = 1 MHz Fig. 6 Typ. capacitances vs. VCE 0698 © by SEMIKRON MiniSKiiP 1200 V ICop / IC 1.2 Mini1207 Tj = 150 °C VGE = ≥ 15 V 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Th [°C] Fig. 7 Rated current of the IGBT ICop / IC = f (Th) ICpuls/IC 2,5 ICsc/ICN 12 Mini1209 Tj = ≤ 150 °C VGE = ± 15 V Mini1210 Tj = ≤ 150 °C VGE = ± 15 V tsc = ≤ 10 µs Lext < 25 nH 10 2 8 Note: *Allowed numbers of short circuit:<1000 *Time between short circuit:>1s 1,5 6 1 4 0,5 2 0 0 0 500 1000 1500 VCE [V] 0 500 1000 1500 VCE [V] Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode B 16 – 4 0698 © by SEMIKRON MiniSKiiP 3 SKiiP 30 NAB 06 SKiiP 31 NAB 06 SKiiP 32 NAB 06 SKiiP 30 NAB 12 SKiiP 31 NAB 12 SKiiP 32 NAB 12 Circuit Case M3 Layout and connections for the customer’s printed circuit board