Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions Values 1) 1200 1200 100 / 90 200 / 180 ± 20 per IGBT/D1/D8, Tcase=25 °C 690 / 125 / 125 – 40 . . .+150 (125) AC, 1 min. 2 500 DIN 40 040 Class F DIN IEC 68 T.1 40/125/56 D1-6 D7 D8 9) Tcase = 80 °C 30 30 Tcase = 80 °C; tp = 1 ms 60 60 tp = 10 ms; sin.; Tj = 150 °C 720 350 350 tp = 10 ms; Tj = 150 °C 2600 600 600 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms Units V V A A V W °C V A A A A2s 7D-Pack = 7 Diodes Pack Characteristics Conditions 1) min. typ. max. VGE = 0, IC = 4 mA ≥ VCES – – VGE = VCE, IC = 2 mA 4,5 5,5 6,5 Tj = 25 °C VGE = 0 – 0,8 1,5 VCE = VCES Tj = 125 °C – 6 – IGES VGE = 20 V, VCE = 0 – – 300 VCEsat IC = 75 A VGE = 15 V; – 2,5(3,1) 3(3,7) VCEsat IC = 100 A Tj = 25 (125) °C – 2,8(3,6) – gfs VCE = 20 V, IC = 75 A 31 – – CCHC per IGBT – – 350 Cies V = 0 – 5 6,6 GE VCE = 25 V Coes – 720 900 f = 1 MHz Cres – 380 500 td(on) V = 600 V – 30 60 VCC = + 15 V / - 15 V 3) tr – 70 140 GE IC = 75 A, ind. load td(off) – 450 600 tf – 70 100 RGon = RGoff = 15 Ω Tj = 125 °C Eon – 10 – Eoff – 8 – Inverse Diode D78) of brake chopper VF = VEC IF = 25 A VGE = 0 V; – 2,0(1,8) 2,5 VF = VEC IF = 40 A Tj = 25 (125) °C – 2,2(2,1) – VTO Tj = 125 °C – 1,1 1,2 rT Tj = 125 °C – 25 44 IRRM IF = 25 A; Tj = 25 (125) °C2) – (25) – Qrr IF = 25 A; Tj = 25 (125) °C2) – 2(4,5) – 8) FWD D8 of "GAL" brake chopper VF = VEC IF = 25 A VGE = 0 V; – 2,0 (1,8) 2,5 VF = VEC IF = 40 A Tj = 25 (125) °C – 2,3 (2,1) – VTO Tj = 125 °C – – 1,2 rT Tj = 125 °C – 25 44 IRRM IF = 25 A; Tj = 25 (125) °C2) – 19(25) – Qrr IF = 25 A; Tj = 25 (125) °C2) – 1,5(4,5) – Thermal Characteristics Rthjc per IGBT / diode D1..6 9) – – 0,18 / 1 Rthjc per diode D7 / D8 – – 1,0 / 1,0 Rthch per module / diode; IGBT – – 0,05 / 0,4 Symbol V(BR)CES VGE(th) ICES by SEMIKRON SEMITRANS® M IGBT Modules SKD 100 GAL 123 D Input bridge B6U with brake chopper 0898 Units V V mA mA nA V V S pF nF pF pF ns ns ns ns mWs mWs V V V mΩ A µC V V V mΩ A µC SKD 100 GAL Features • Round main terminals (2 mm ∅) • Easy drilling of PCB • Input diodes glass passivated • 1400 V PIV • High I2t rating (inrush current) • IGBT is latch-up free, homogeneous NPT silicon-structure • High short circuit capability, self limiting to 6 * Icnom • Fast & soft CAL diodes8) • Isolated copper baseplate using DCB Direct Copper Bonding Technology • Large clearance (9 mm) and creepage distances (13 mm). Typical Applications: Input rectifier bridge (B6U) with brake chopper for PWM inverter drives using SEMITRANS SKM 75GD123D 1) 2) 3) °C/W °C/W °C/W 8) 9) Tcase = 25 °C, unless otherwise specified IF = – IC, VR = 600 V, – diF/dt = 800 A/µs, VGE = 0 V Use VGEoff = -5 ... - 15 V CAL = Controlled Axial Lifetime Technology. Data D1 - D6, case and mech. data → B 6 – 232 B 6 – 231 SKD 100 GAL 123 D ... SEMITRANS 7D-Pack = Seven Diodes Pack (Sixpack modified) Case D 69 A *) *) Plastic collar around pin B for UL creepage distance of > 12,7 mm Dimensions in mm Case outline and circuit diagram Characteristics continued Symbol Input VRRM ID VF VTO rT Rthjc Tsolder Conditions 1) min. Values typ. 1400 – – – – – – – – – Units max. Bridge Rectifier D1...D6 Tcase = 80 °C; Tvj = 25 °C; IF = 75 A Tvj = 150 °C Tvj = 150 °C D1...D6 > 5 s, max. 15 sec. (transfer) – 180 – 100 1,45 0,8 8,5 1,0 250 4 35 – – – – – – 5 44 5x9,81 175 V A V V mΩ K/W °C Two devices are supplied in one SEMIBOX A without mounting hardware. Larger Packing units (≥ 10) are used if suitable. SEMIBOX → C - 1. Nm lb.in. m/s2 g For diodes D7/D8 use diode diagrams of type SKM 40 GD 123 D, → B 6 - 72 Mechanical Data M1 a w B 6 – 232 to heatsink, SI Units to heatsink, US Units (M5) 0898 This is an electrostatic discharge sensitive device (ESD). Please observe the international standard IEC 747-1, Chapter IX. For the IGBT use diagrams of type SKM 100 GB 123 D → B 6 - 112 etc. © by SEMIKRON SKM 100 GB 123 D… Tj = 125 °C VCE = 600 V VGE = + 15 V RG = 15 Ω Fig. 1 Rated power dissipation Ptot = f (TC) Fig. 2 Turn-on /-off energy = f (IC) 752iu.vpo IC [A] 1000 Tj = 125 °C VCE = 600 V VGE = + 15 V IC = 75 A 1 pulse TC = 25 °C Tj < 150 °C t(p)= 21us 100 100us 10 1ms 10ms 1 0,1 1 Fig. 3 Turn-on /-off energy = f (RG) ICpuls/IC 2,5 100 1000 10000 VCE [V] Not for linear use Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) 752soas.vpo ICSC/ICN 12 752rso.vpo Tj < 150 °C VGE = 15 V RGoff = 15 Ω IC = 75 A 2 10 10 8 Tj < 150 °C VGE = + 15 V tsc < 10 µs L < 25 nH ICN = 75 A Note: *Allowed numbers of short circuit:<1000 *Time between short circuit:>1s 1,5 6 1 4 0,5 2 0 0 0 500 1000 1500 VCE [V] Fig. 5 Turn-off safe operating area (RBSOA) B 6 – 112 0 500 1000 1500 VCE [V] Fig. 6 Safe operating area at short circuit IC = f (VCE) 0898 © by SEMIKRON Tj = 150 °C VGE > 15 V Fig. 8 Rated current vs. temperature IC = f (TC) IC [A] 160 752us3.vpo IC [A] 160 140 140 17V 15V 120 752us7.vpo 17V 15V 120 13V 13V 100 80 11V 100 11V 9V 7V 80 7V 9V 60 60 40 40 20 20 0 0 0 1 2 3 4 0 5 VCE [V] Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C 1 2 3 4 5 VCE [V] Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C 752gf3.vpo IC [A] 160 Pcond(t) = VCEsat(t) . IC(t) 140 VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) . IC(t) 120 VCE(TO)(Tj) ≤ 1,5 + 0,002 (Tj - 25) [V] 100 80 typ.: rCE(Tj) = 0,013 + 0,00005 (Tj - 25) [Ω] 60 max.: rCE(Tj) = 0,020 + 0,00007 (Tj - 25) [Ω] valid for VGE = + 15 40 20 +2 [V]; IC > 0,3 ICnom −1 0 0 Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations © by SEMIKRON 2 4 6 8 10 12 VGE [V] Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V 0898 B 6 – 113 SKM 100 GB 123 D… VGE [V] 20 C [nF] 100 752Qg3.vpo 752C.vpo 18 800V 600V 16 VGE = 0 V f = 1 MHZ ICpuls = 75 A 14 10 12 Ciss 10 8 1 6 Coss 4 Crss 2 0,1 0 0 100 200 300 400 0 500 600 QG [nC] Fig. 13 Typ. gate charge characteristic t [ns] 10000 tdoff 20 30 40 VCE [V] Fig. 14 Typ. capacitances vs.VCE W >QV@ 752tic.vpo 1000 10 Tj = 125 °C VCE = 600 V VGE = + 15 V RGon = 15 Ω RGoff = 15 Ω induct. load WUJYSR Tj = 125 °C VCE = 600 V VGE = + 15 V IC = 75 A induct. load WGRII WU WGRQ tr 100 tf WI tdon 10 30 50 70 90 110 130 150 170 IC [A] Fig. 15 Typ. switching times vs. IC 5* >:@ Fig. 16 Typ. switching times vs. gate resistor RG 0*%;/6 P- 9&& 9 & 7M 9*( 9 5* Ω Ω Ω Ω 60 Ω (RII' Fig. 17 Typ. CAL diode forward characteristic B 6 – 114 ,) $ Fig. 18 Diode turn-off energy dissipation per pulse 0898 © by SEMIKRON © by SEMIKRON 0796 B 6 – 115