SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Absolute Maximum Ratings Symbol Conditions 1) Values Units 1200 ± 20 23 / 15 46 / 30 24 / 17 48 / 34 V V A A A A 1500 25 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 V A A A2s °C °C V Inverter & Chopper VCES VGES IC Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C ICM Theatsink = 25 / 80 °C IF = –IC IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C Bridge Rectifier VRRM Theatsink = 80 °C ID IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min. MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 22 NAB 12 SKiiP 22 NAB 12 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M2 Characteristics Symbol Conditions 1) IGBT - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) tr IC = 15 A; Tj = 125 °C td(off) Rgon = Rgoff = 82 Ω tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT min. typ. max. Units – – – – – – – – 2,5(3,1) 3,0(3,7) V 55 110 ns 45 90 ns 400 600 ns 70 100 ns 4,0 – mJ 1,0 – nF – 1,4 K/W Diode 2) - Inverter & Chopper VF = VEC IF = 15 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 15 A, VR = – 600 V IRRM diF/dt = – 400 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh – – – – – – – V 2,0(1,8) 2,5(2,3) V 1,2 1,0 mΩ 73 53 – A 16 – µC 2,7 – mJ 0,6 1,7 K/W – Diode - Rectifier VF IF = 35 A, Tj = 25 °C Rthjh per diode – – • 1,2 – – 1,6 V K/W Temperature Sensor T = 25 / 100 °C RTS 1000 / 1670 Ω Shunts (SKiiP 22 NAB 12 I) Rcs(dc) 5 % 4) Rcs(ac) 1% 16,5 10 mΩ mΩ Mechanical Data case to heatsink, SI Units M1 mechanical outline see page Case B 16 – 8 © by SEMIKRON UL recognized file no. E63532 2 – M2 000131 2,5 • 1) 2) 3) 4) specification of shunts and temperature sensor see part A common characteristics see page B 16 – 4 Theatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) With integrated DC and/or AC shunts accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used. Nm B 16 – 53 Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C 22NA1204.xls 22NA1203.xls 5 5 Tj = 125 °C VCE = 600 V VGE = ± 15 V RG = 52 Ω mWs Eon 4 Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 15 A mWs 4 3 3 Eon Eoff 2 2 Eoff 1 1 E E 0 0 0 IC 10 20 A 0 30 Fig. 3 Turn-on /-off energy = f (IC) RG 50 100 B 16 – 54 150 Fig. 4 Turn-on /-off energy = f (RG) ICpuls = 15 A Fig. 5 Typ. gate charge characteristic Ω VGE = 0 V f = 1 MHz Fig. 6 Typ. capacitances vs. VCE 000131 © by SEMIKRON MiniSKiiP 1200 V ICop / IC 1.2 Mini1207 Tj = 150 °C VGE = ≥ 15 V 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Th [°C] Fig. 7 Rated current of the IGBT ICop / IC = f (Th) ICpuls/IC 2,5 ICsc/ICN 12 Mini1209 Tj = ≤ 150 °C VGE = ± 15 V Mini1210 Tj = ≤ 150 °C VGE = ± 15 V tsc = ≤ 10 µs Lext < 25 nH 10 2 8 Note: *Allowed numbers of short circuit:<1000 *Time between short circuit:>1s 1,5 6 1 4 0,5 2 0 0 0 500 1000 1500 VCE [V] 0 500 1000 1500 VCE [V] Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode B 16 – 4 0698 © by SEMIKRON MiniSKiiP 2 +rect SKiiP 20 NAB 06 ... SKiiP 21 NAB 06 ... SKiiP 20 NAB 12 ... SKiiP 22 NAB 12 ... Circuit Case M2 Layout and connections for the customer’s printed circuit board Note: The shunts are available only by option I +B +DC I+ +T -T g1 L1 L2 L3 B gB g2 g3 g5 U V W g4 g6 Isu Isv Isw 0u 0v 0w Hauptanschluß power connector Steueranschluß control pin -rect -B -DC -DC/A