KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC IB PC PC* Collector Power Dissipation TJ TSTG Value 120 Units V 120 V 5 V Collector Current 800 mA Base Current 160 mA 500 1,000 mW mW Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC=10µA, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 ICBO Collector Cut-off Current VCB=120V, IE=0 IEBO Emitter Cut-off Current VBE=5V, IC=0 hFE DC Current Gain VCE=5V, IC=100mA Min. 120 Typ. Max. Units V 100 nA 100 nA 5 V 80 240 VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 1.0 V VBE (on) Base-Emitter On Voltage VCE=5V, IC=500mA 1.0 V fT Current Gain Bandwidth Product VCE=5V, IC=100mA Cob Output Capacitance VCB=10V, IE=0, f=1MHz 120 MHz 30 pF hFE Classification Classification O Y hFE 80 ~ 160 120 ~ 240 Marking SCX hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2881 Typical Characteristics 1.0 0.8 VCE = 5V IB = 20mA IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT IB = 50mA IB = 10mA 0.6 IB = 5mA 0.4 IB = 3mA IB = 2mA 0.2 IB = 1mA 4 8 12 0.6 0.4 0.2 0.0 0.0 0.0 0 0.8 16 0.4 0.6 0.8 1.0 VBE[mV], SATURATION VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characterisitcs Figure 2. Base-Emitter On Voltage 1 1000 IC = 10 IB VCE(sat) [V], SATURATION VOLTAGE VCE = 5 V hFE, DC CURRENT GAIN 0.2 100 0.1 0.01 10 1 10 100 1 1000 10 100 1000 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage 1.6 10000 IC [mA], COLLECTOR CURRENT PC [W], POWER DISSIPATION o 1.2 2 Mounted on Ceramic Board (250 mm x 0.8 mm) 0.8 0.4 0.0 0 50 100 150 o Ta [ C], AMBIENT TEMPERATURE Figure 5. Power Derating ©2002 Fairchild Semiconductor Corporation 200 Ta = 25 C Single Pulse IC MAX. (Pulse) 1000 10 ms 1 ms IC MAX. (DC) 100 ms 100 10 1 0.1 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A2, September 2002 KSC2881 Package Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1