STMICROELECTRONICS 2N5682

2N5681
2N5682
SILICON NPN TRANSISTORS
■
■
SGS-THOMSON PREFERRED SALESTYPES
NPN TRANSISTOR
APPLICATIONS
GENERAL PURPOSE SWITCHING
■ GENERAL PURPOSE AMPLIFIERS
■
DESCRIPTION
The 2N5681, 2N5682 are high voltage silicon
epitaxial planar NPN transistors in Jedec TO-39
metal case intended for use as drivers for high
power transistors in general purpose, amplifier
and switching applications.
The complementary PNP types are the 2N5679
and 2N5680 respectively.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
2N5680
2N5682
120
V
120
V
V CBO
Collector-Base Voltage (I E = 0)
100
V CEO
Collector-Emitter Voltage (I B = 0)
100
V EBO
Emitter-Base Voltage (I C = 0)
4
V
IC
Collector Current
1
A
IB
Base Current
0.5
A
P tot
Total Dissipation at T c ≤ 25 o C
10
W
P tot
Total Dissipation at T amb ≤ 50 o C
T stg
Tj
July 1997
Storage Temperature
Max. Operating Junction Temperature
1
W
-65 to 200
o
C
200
o
C
1/4
2N5681 / 2N5682
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
17.5
175
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CEV
Parameter
Collector Cut-off
Current (V BE = -1.5V)
Max.
Unit
for 2N5681
for 2N5682
T c = 150 o C
for 2N5681
for 2N5682
Test Conditions
V CE = 100 V
V CE = 120 V
1
1
µA
µA
V CE = 100 V
V CE = 120 V
1
1
µA
µA
1
1
µA
µA
10
10
µA
µA
1
µA
I CBO
Collector Cut-off
Current (I E = 0)
for 2N5681
for 2N5682
V CB = 100 V
V CB = 120 V
I CEO
Collector Cut-off
Current (I B = 0)
for 2N5681
for 2N5682
V CB = 70 V
V CB = 80 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 4 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
V CE(sat) ∗
I C = 10 mA
for 2N5681
for 2N5682
I C = 250 mA
I C = 500 mA
IC = 1 A
I B = 25 mA
I B = 50 mA
I B = 200 mA
V BE ∗
Base-Emitter Voltage
I C = 250 mA
V CE = 2 V
h FE ∗
DC Current Gain
I C = 250 mA
IC = 1 A
V CE = 2 V
V CE = 2 V
hfe
Small Signal Current
Gain
I C = 0.2 A
fT
Transition frequency
I C = 100 mA
Collector Base
Capacitance
IE = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
100
120
Collector-Emitter
Saturation Voltage
C CBO
2/4
Min.
V CE = 1.5 V
V CE = 10 V
V CB = 20 V
40
5
f = 1KHz
40
f =10MHz
30
f = 1MHz
V
V
0.6
1
2
V
V
V
1
V
150
MHz
50
pF
2N5681 / 2N5682
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
G
A
I
E
F
H
B
L
P008B
3/4
2N5681 / 2N5682
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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