STMICROELECTRONICS 2N2369A

2N2369A
HIGH-SPEED SATURATED SWITCH
DESCRIPTION
The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
40
V
V CB O
Collector-base Voltage (I E = 0)
V CE S
Collector-emitter Voltage (V BE = 0)
40
V
V CE O
Collector-emitter Voltage (I B = 0)
15
V
V EB O
Emitter-base Voltage (I C = 0)
4.5
V
Collector Current
0.2
A
I CM
Collector Current (10 µs pulse)
0.5
A
Pt ot
Total Power Dissipation at T amb ≤ 25 °C
at T c ase ≤ 25 °C
at T c ase ≤ 100 °C
0.36
1.2
0.68
W
W
W
– 65 to 200
°C
IC
T s t g, T j
Storage and Junction Temperature
November 1988
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2N2369A
THERMAL DATA
R t h j -c ase
R t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
146
486
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
30
µA
0.4
µA
I CBO
Collector Cutoff
Current (I E = 0)
V CB = 20 V
I CES
Collector Cutoff
Current (V B E = 0)
V CE = 20 V
Collector-base
Breakdown Voltage
(I E = 0)
I C = 10 µA
40
V
Collector-emitter
Breakdown Voltage
(V BE = 0)
I C = 10 µA
40
V
Collector-emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
15
V
Emitter-base
Breakdown Voltage
(I C = 0)
I E = 10 µA
4.5
V
V (BR) CBO
V (BR)CES
V (B R)CEO *
V (BR) EBO
V CE
(s at )*
Collector-emitter
Saturation Voltage
I C = 10 mA
I C = 30 mA
I C = 100 mA
I C = 10 mA
T am b = 125 °C
T amb = 150 °C
IB
IB
IB
IB
= 1 mA
= 3 mA
= 10 mA
= 1 mA
0.7
0.14
0.17
0.28
0.2
0.25
0.5
V
V
V
0.19
0.3
V
0.8
0.9
1.1
0.85
1.15
1.6
V
V
V
1.02
V
Base-emitter
Saturation Voltage
IB
I C = 10 mA
I B = 30 mA
IB
I C = 100 mA
IB
I C = 10 mA
IB
T am b = – 55 to 125
h F E*
DC Current Gain
IC
IC
IC
IC
0.35 V
1V
0.4 V
1V
40
40
30
20
63
66
71
h F E*
DC Current Gain
I C = 10 mA
V CE = 0.35 V
T am b = – 55 °C
20
50
Transition Frequency
I C = 10 mA
f = 100 MHz
V CE = 10 V
500
675
C CB O
Collector-base
Capacitance
IE = 0
f = 1 MHz
V CB = 5 V
t s **
Storage Time
t o n **
t o f f **
V BE
(s at )
fT
*
=
=
=
=
10 mA
10 mA
30 mA
100 mA
= 1 mA
= 3 mA
= 10 mA
= 1 mA
°C
V CE
V CE
V CE
V CE
=
=
=
=
0.59
120
120
MHz
2.3
4
pF
I C = 10 mA
V CC = 10 V
I B 1 = – I B2 = 10 mA
6
13
ns
Turn-on Time
I C = 10 mA
I B 1 = 3 mA
V CC = 3 V
9
12
ns
Turn-off Time
I C = 10 mA
I B 1 = 3 mA
V CC = 3 V
I B2 = – 1.5 mA
13
18
ns
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
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Min.
2N2369A
DC Current Gain.
Collector-emitter Saturation Voltage.
Collector-base and emitter-base capacitances.
Contours of Constant Transition Frequency.
Switching Characteristics.
Switching Characteristics.
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2N2369A
Test Circuit for ts
Test Circuit for ton, toff
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2N2369A
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
A
G
I
E
F
H
B
L
C
0016043
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2N2369A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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