BD179 NPN SILICON TRANSISTOR ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION ■ GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (IE = 0) Parameter 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 3 A IB Base Current o P t ot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj Max. O perating Junction Temperature September 1997 7 A 30 W -65 to 150 o C 150 o C 1/5 BD179 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 4.16 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CBO Collector Cut-off Current (IE = 0) V CB = 80 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ Min. I C = 100 mA Max. Un it 100 µA 1 mA 80 V Collector-Emitter Saturation Voltage IC = 1 A IB = 0.1 A 0.8 V V BE ∗ Base-Emitter Voltage IC = 1 A V CE = 2 V 1.3 V h FE∗ DC Current G ain I C = 150 mA IC = 1 A V CE = 2 V V CE = 2 V h FE h FE G roups I C = 150 mA VCE = 2 V Transition F requency I C = 250 mA VCE = 10 V fT 40 15 group 16 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/5 Typ . Derating Curves 100 3 250 MHz BD179 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/5 BD179 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 4/5 BD179 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5