BC857 BC858 SMALL SIGNAL PNP TRANSISTORS ■ ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K 2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CES Collector-Emitter Voltage (V BE = 0) Value Uni t BC857 BC858 -50 -30 V V CBO Collector-Base Voltage (IE = 0) -50 -30 V V CEO Collector-Emitter Voltage (I B = 0) -45 -30 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -0.1 A I CM Collector Peak Current -0.2 A I BM Base Peak Current -0.2 A I EM Emitter Peak Current -0.2 A P t ot Total Dissipation at T c = 25 oC 300 mW T stg Storage Temperature IC Tj Max. O perating Junction Temperature October 1997 -65 to 150 o C 150 o C 1/5 BC857/BC858 THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max o 420 330 o C/W C/W • Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -30 V V CE = -30 V Min. Typ . Ta mb = 150 o C Max. Un it -15 -5 nA µA V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) I C = -10 µA for BC857 for BC858 -50 -30 V V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = -10 µA for BC857 for BC858 -50 -30 V V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -2 mA for BC857 for BC858 -45 -30 V V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I C = -10 µA for BC857 for BC858 -6 -5 V V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = -10 mA I C = -100 mA I B = -0.5 mA IB = -5 mA -0.09 -0.25 V BE(s at)∗ Base-Emitter Saturation Voltage I C = -10 mA I C = -100 mA I B = -0.5 mA IB = -5 mA -0.75 -0.9 V BE(on) ∗ Base-Emitter O n Voltage I C = -2 mA I C = -10 mA V CE = -5 V VCE = -5 V h FE DC Current G ain I C = -10 µA for g rou p A for g rou p B I C = -2 mA for g rou p A for g rou p B V CE = -5 V fT -0.66 -0.72 V V V V -0.75 -0.82 V V 90 150 VCE = -5 V 110 200 Transition F requency I C = -10 mA V CE = -5 V f = 100MHz C CB Collector Base Capacitance IE = 0 NF Noise Figure V CE = -5 V IC = -0.2 mA ∆f = 200 Hz R G = 2 KΩ ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/5 -0.6 -0.3 -0.65 V CB = -10 V 180 290 150 f = 1 MHz f = 1KHz 220 450 2 1.2 MHz 6 pF 10 4 dB dB BC857/BC858 ELECTRICAL CHARACTERISTICS (Continued) Symb ol hie h re hf e hoe Parameter Input Impedance Test Cond ition s V CE = -5 V IC = -2 mA for g rou p A for g rou p B f = 1KHz V CE = -5 V IC = -2 mA for g rou p A for g rou p B f = 1KHz Small Signal Current Gain V CE = -5 V IC = -2 mA for g rou p A for g rou p B f = 1KHz Output Admittance V CE = -5 V IC = -2 mA for g rou p A for g rou p B f = 1KHz Reverse Voltage Ratio Min. Typ . Max. Un it 1.6 3.2 2.7 4.5 4.5 8.5 KΩ KΩ -4 1.5 2 10 10 -4 220 330 18 30 30 60 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 3/5 BC857/BC858 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 4/5 BC857/BC858 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 5/5