BC847 SMALL SIGNAL NPN TRANSISTORS ■ ■ ■ ■ Type Marking BC847B 1F SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENT IS BC857 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 50 V V CBO Collector-Base Voltage (IE = 0) 50 V V CEO Collector-Emitter Voltage (I B = 0) 45 V V EBO Emitter-Base Voltage (I C = 0) 6 V Collector Current 0.1 A I CM Collector Peak Current 0.2 A I BM Base Peak Current 0.2 A I EM Emitter Peak Current 0.2 A P t ot Total Dissipation at T c = 25 C 300 mW T stg Storage Temperature IC Tj o Max. O perating Junction Temperature October 1997 -65 to 150 o C 150 o C 1/4 BC847 THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max o 420 330 o C/W C/W • Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = 30 V V CE = 30 V Min. Typ . T amb = 150 o C Max. Un it 15 5 nA µA V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) I C = 10 µA 50 V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = 10 µA 50 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 2 mA 45 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I C = 10 µA 6 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 10 mA I C = 100 mA IB = 0.5 mA I B = 5 mA 0.09 0.2 V BE(s at)∗ Base-Emitter Saturation Voltage I C = 10 mA I C = 100 mA IB = 0.5 mA I B = 5 mA 0.75 0.9 V BE(on) ∗ Base-Emitter O n Voltage I C = 2 mA I C = 10 mA V CE = 5 V VCE = 5 V h FE∗ DC Current G ain I C = 10 µA I C = 2 mA V CE = 5 V V CE = 5 V fT 200 V V V V 0.63 0.7 0.7 0.77 150 290 450 300 V V Transition F requency I C = 10 mA VCE = 5 V f = 100MHz C CB Collector Base Capacitance IE = 0 V CB = 10 V f = 1 MHz C EB Collector Emitter Capacitance IC = 0 V EB = 0.5 V f = 1 MHz 9 NF Noise Figure V CE = 5 V I C = 0.2 mA f = 1KHz ∆f = 200 Hz R G = 2 KΩ 2 10 dB h i e∗ Input Impedance V CE = 5 V I C = 2 mA f = 1KHz 4.5 8.5 KΩ h re∗ Reverse Voltage Ratio V CE = 5 V I C = 2 mA f = 1KHz 2 h fe ∗ Small Signal Current Gain V CE = 5 V I C = 2 mA f = 1KHz 330 h oe∗ Output Admittance V CE = 5 V I C = 2 mA f = 1KHz 30 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 0.58 0.25 0.6 MHz 4.5 3.2 pF pF 10 -4 60 µs BC847 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 BC847 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4