SO2907 SO2907A SMALL SIGNAL PNP TRANSISTORS ■ ■ ■ ■ Type Marking SO2907 P05 SO 2907A P03 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING NPN COMPLEMENTS ARE RESPECTIVELY SO2907 AND SO2907A 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t SO2907 SO 2907A V CBO Collector-Emitter Voltage (V BE = 0) -60 -60 V V CEO Collector-Emitter Voltage (I B = 0) -40 -60 V V EBO Emitter-Base Voltage (I C = 0) I CM Collector Peak Current P t ot Total Dissipation at T c = 25 C T stg Storage Temperature Tj March 1996 o Max. O perating Junction Temperature -5 V -0.8 A 350 mW -65 to 150 o C 150 o C 1/4 SO2907/SO2907A THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max o 350 290 o C/W C/W • Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CEX Collector Cut-off Current V CE = -30 V V BE = -3 V -50 nA I BEX Base Cut-off Current V CE = -30 V V BE = -3 V -50 nA I CBO Collector Cut-off Current (IE = 0) V CB = -50 V for SO2907 for SO2907A -20 -10 nA nA V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA for SO2907 for SO2907A -40 -60 V V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I B = 0) I C = -10 µA -60 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -10 µA -5 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = -150 mA I C = -500 mA IB = -15 mA IB = -50 mA -0.4 -1.6 V V V BE(s at)∗ Collector-Base Saturation Voltage I C = -150 mA I C = -500 mA IB = -15 mA IB = -50 mA -1.3 -2.6 V V DC Current G ain I C = -0.1 mA for SO2907 for SO2907A I C = -1 mA for SO2907 for SO2907A I C = -10 mA for SO2907 for SO2907A I C = -150 mA V CE = -10 V hFE∗ V CE = -10 V 50 100 VCE = -10 V V CE = -10 V 75 100 100 300 Transition F requency I C = -50 mA V CE = -20V f = 100MHz C CB Collector Base Capacitance IE = 0 V CB = -10 V f = 1 MHz 8 pF C EB Emitter Base Capacitance IC = 0 V EB = -2 V f = 1 MHz 30 pF td Delay Time I C = -150 mA 10 ns tr Rise Time 40 ns t on Switching On Time 45 ns ts Storage Time 80 ns tf Fall T ime fT t of f I C = -150 mA Switching Off Time ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 35 75 IB1 = -15 mA IB1 = -I B2 = -15mA 200 MHz 30 ns 100 ns SO2907/SO2907A SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 SO2907/SO2907A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4