BCW66 SMALL SIGNAL NPN TRANSISTORS ■ ■ ■ ■ Type Marking BCW66F EF BCW 66G EG BCW 66H EH SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENT IS BCW68 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 75 V V CEO Collector-Emitter Voltage (I B = 0) 45 V V EBO Emitter-Base Voltage (I C = 0) 5 V 0.8 A 1 A 0.1 A 360 mW IC I CM IB Collector Current Collector Peak Current Base Current o P t ot Total Dissipation at T c = 25 C T stg Storage Temperature Tj Max. O perating Junction Temperature October 1997 -65 to 150 o C 150 o C 1/4 BCW66 THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max o 375 278 o C/W C/W • Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CES Collector Cut-off Current (V BE = 0) V CE = Rated V CES V CE = Rated V CES I EBO Collector Cut-off Current (IE = 0) V EB = 4 V Min. Typ . T amb = 150 oC Max. Un it 20 20 nA µA 20 nA V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V EB = 0) I C = 10 µA V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I C = 10 µA V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 100 mA I C = 500 mA I B = 10 mA I B = 50 mA 0.3 0.7 V V V BE(s at)∗ Collector-Base Saturation Voltage I C = 100 mA I C = 500 mA I B = 10 mA I B = 50 mA 1.25 2 V V DC Current G ain I C = 0.1 mA for g rou p F for g rou p G for g rou p H I C = 10 mA for g rou p F for g rou p G for g rou p H I C = 100 mA for g rou p F for g rou p G for g rou p H I C = 500 mA for g rou p F for g rou p G for g rou p H VCE = 10 V h FE∗ V V 75 V V 5 V CE = 1 V 75 110 180 V CE = 1 V 100 160 250 250 400 630 V CE = 2 V 35 60 100 I C = 20 mA VCE = 10V f = 100MHz C CB Collector Base Capacitance IE = 0 V CB = 10 V C EB Emitter Base Capacitance IC = 0 V CE = 0.5 V NF Noise Figure V CE = 5 V I C = 0.2 mA f = 1KHz ∆f = 200 Hz R G = 2 KΩ t on Switching On Time I C = 150 mA R L = 150 Ω ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % V 35 50 80 Transition F requency fT 2/4 45 100 MHz f = 1 MHz f = 1 MHz I B1 = -I B2 =15 mA 2 12 pF 80 pF 10 dB 100 ns BCW66 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 BCW66 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4