STMICROELECTRONICS BUF410

BUF410
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
■
■
■
SGS-THOMSON PREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
■
SWITCH MODE POWER SUPPLIES
■
MOTOR CONTROL
DESCRIPTION
The BUF410 is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. They
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Un it
V CEV
Collector-Emitter Voltage (VBE = -1.5 V)
850
V
V CEO
Collector-Emitter Voltage (IB = 0)
450
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
Collector Current
15
A
Collector Peak Current (tp < 5 ms)
30
A
3
A
IC
I CM
IB
Base Current
I BM
Base Peak Current (tp < 5 ms)
4.5
A
P tot
T otal Dissipation at Tc = 25 o C
125
W
T s tg
Storage Temperature
-65 to 150
o
C
Tj
Max O peration Junction Temperature
150
o
C
Tj
Max. Operating Junction T emperature
150
o
C
July 1997
1/6
BUF410
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-Case
Max
o
1
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CER
Parameter
Min.
Collector Cut-off
Current (R BE = 100 Ω)
V CE = V CEV
V CE = V CEV
I CEV
Collector Cut-off
Current (IB = 0)
V CE = V CEV V BE = -1.5 V
o
V CE = V CEV V BE = -1.5 V Tc =100 C
I EBO
Emitter Cut-off Current
(I C = 0)
V BE = 5 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
V EBO
V CE(sat )∗
V BE(s at)∗
di c /dt
V CE (3µs)
V CE (5µs)
o
I C = 200 mA
L = 25 mH
Emitter Base Voltage
(I C = 0)
I E = 50 mA
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
=5 A
=5 A
=10 A
=10 A
IB
IB
IB
IB
=
=
=
=
0.5 A
0.5 A
2 A
2 A
IC
IC
IC
IC
=5 A
=5 A
=10 A
=10 A
IB
IB
IB
IB
=
=
=
=
0.5 A
0.5 A
2 A
2 A
Base-Emitter
Saturation Voltage
Rate of rise on-state
Collector Current
Collector-Emitter
Dynamic Voltage
Collector-Emitter
Dynamic Voltage
Max.
Un it
0.2
1
mA
mA
0.2
1
mA
mA
1
mA
450
V
7
V
0.8
o
2.8
T c =100 C
0.5
o
T c =100 C
2
0.9
o
1.5
T c =100 C
1.1
o
T c =100 C
V CC = 300 V R C = 0
I B1 = 0.75 A
I B1 = 0.75 A
I B1 = 3 A
tp = 3 µs
o
Tj =25 C
o
Tj =100 C
o
T j =100 C
V CC = 300 V
I B1 = 0.75 A
I B1 = 0.75 A
R C = 60 Ω
o
Tj =25 C
Tj =100 o C
1.5
60
2.1
R C = 60 Ω
o
T j =25 C
o
T j =100 C
1.1
0.8
0.05
0.08
IC = 5 A
V BB = - 5 V
V c la mp = 400 V
L = 0.5 mH
V CC = 50 V
R BB = 1.2 Ω
IB1 = 0.5 A
ts
tf
tc
Storage Time
Fall T ime
Cross Over T ime
IC = 5 A
V BB = - 5 V
V c la mp = 400 V
L = 0.5 mH
V CC = 50 V
R BB = 1.2 Ω
IB1 = 0.5 A
T j =100 oC
Maximum Collector
Emitter Voltage
without Snubber
IC = 5 A
V BB = - 5 V
V c la mp = 400 V
L = 0.5 mH
VCC = 50 V
R BB = 1.2 Ω
IB1 = 0.5 A
o
T j =125 C
Storage Time
Fall T ime
Cross Over T ime
IC = 5 A
V BB = 0
V c la mp = 400 V
L = 0.5 mH
V CC = 50 V
R BB = 0.3 Ω
IB1 = 0.5 A
V
V
V
V
8
V
V
4
V
V
µs
µs
µs
1.8
0.1
0.18
500
V
V
V
V
A/µs
A/µs
A/µs
45
100
V CC = 300 V
I B1 = 0.75 A
I B1 = 0.75 A
Storage Time
Fall T ime
Cross Over T ime
ts
tf
tc
Typ .
T c = 100 C
ts
tf
tc
V CEW
2/6
Test Cond ition s
µs
µs
µs
V
1.5
0.04
0.07
µs
µs
µs
BUF410
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
ts
tf
tc
Parameter
Test Cond ition s
Storage Time
Fall T ime
Cross Over T ime
IC = 5 A
V BB = 0
V c la mp = 400 V
L = 0.5 mH
V CC = 50 V
R BB = 0.3 Ω
IB1 = 0.5 A
o
T j =100 C
Maximum Collector
Emitter Voltage
without Snubber
IC = 5 A
V BB = 0
V c la mp = 400 V
L = 0.5 mH
V CC = 50 V
R BB = 0.3 Ω
IB1 = 0.5 A
T j =125 oC
ts
tf
tc
Storage Time
Fall T ime
Cross Over T ime
I C = 10 A
V BB = -5 V
V c la mp = 400 V
L = 0.25 mH
V CC = 50 V
R BB =1.2 Ω
IB1 = 2 A
ts
tf
tc
Storage Time
Fall T ime
Cross Over T ime
I C = 10 A
V BB = - 5 V
V c la mp = 400 V
L = 0.25 mH
V CC = 50 V
R BB =1.2 Ω
IB1 = 2 A
o
Tj =100 C
Maximum Collector
Emitter Voltage
without Snubber
I CW off = 15 A
V BB = - 5 V
L = 0.17 mH
o
T j =125 C
V CC = 50 V
R BB = 1.2 Ω
IB1 = 3 A
V CEW
V CEW
Turn-on Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
Min.
Typ .
Max.
Un it
3
0.15
0.25
µs
µs
µs
500
V
µs
µs
µs
1.9
0.06
0.12
3.2
0.12
0.3
400
µs
µs
µs
V
Turn-off Switching Test Circuit
1) Fast electronic switch
3) Fast recovery rectifier
2) Non-inductive Resistor
Turn-on SwitchingTest Waveforms.
3/6
BUF410
Turn-off SwitchingTest Waveforms (inductive load).
Forward Biased Safe Operating Areas.
Reverse Biased Safe Operating Area
Storage Time Versus Pulse Time.
4/6
BUF410
TO-218 (SOT-93) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
–
16.2
–
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
0.163
31
1.220
–
12.2
–
0.480
Ø
4
4.1
0.157
0.161
D
C
A
E
R
L6
L5
H
G
L3
L2
F
¯
R
1
2
3
P025A
5/6
BUF410
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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