BUL310 BUL310PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC LARGE RBSOA U.L. RECOGNISED ISOWATT220 PACKAGE (U.L. FILE # E81734 (N)): ISOLATION VOLTAGE 1500VRMS APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL310 and BUL310PI are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. 3 1 3 2 1 TO-220 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BUL310 Unit BUL310PI VC ES Collector-Emitter Voltage (V BE = 0) 1000 V CEO Collector-Emitter Voltage (I B = 0) 500 V V EBO Emitter-Base Voltage (IC = 0) 7 V 5 A IC I CM Collector Current Collector Peak Current (t p < 5 ms) IB Base Current IB M Base Peak Current (tp < 5 ms) P tot Total Dissipation at Tc = 25 o C T stg Storage Temperature Range Tj Max. Operating Junction Temperature December 1994 V 10 A 3 A 4 75 A 35 W -65 to 150 o C 150 o C 1/7 BUL310/PI THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max TO-220 ISOWATT220 1.65 62.5 3.58 62.5 o o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions I CE S Collector Cut-off Current (V BE = 0) V CE = 1000 V V CE = 1000 V I CEO Collector Cut-off Current (I B = 0) V EC = 400 V V CEO(sus) Collector-Emitter Sustaining Voltage Min. Typ. T j = 125 o C Max. Unit 200 1000 µA µA 250 µA I C = 100 mA 500 V Emitter-Base Voltage (I C = 0) I E = 100 µA 7 V V CE (sat)∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A 0.5 0.7 1.1 V V V VB E(sat)∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A 1 1.1 1.2 V V V DC Current Gain I C = 10 mA IC = 3 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE (off) = -5 V V CL = 250 V 1.9 160 µs ns ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE (off) = -5V V CL = 250 V T j = 125 o C V EBO h FE ∗ V CE = 5 V VC E = 2.5 V IB1 = 0.4 A RBB = 0 Ω L = 200 µH IB1 = 0.4 A R BB = 0 Ω L = 200 µH ∗ Pulsed: Pulse durati on = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/7 Derating Curves 10 10 1.2 80 1.8 150 µs ns BUL310/PI DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/7 BUL310/PI Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/7 BUL310/PI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/7 BUL310/PI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 Ø 1 2 3 L2 6/7 L4 P011G BUL310/PI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7