BUL118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 3 1 DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (IB = 0) 400 V V EBO Emitter-Base Voltage o (I C = 0, I B <1.5A, tp <10µs, Tj < 150 C) Collector Current BV EBO V 3 A 6 A IC I CM IB Collector Peak Current (tp < 5 ms) Base Current I BM Base Peak Current (tp < 5 ms) P t ot Total Dissipation at Tc = 25 C T stg May 1999 o St orage Temperature 1.5 A 3 A 60 -65 to 150 W o C 1/7 BUL118 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 2.08 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Test Cond ition s Collector Cut-off Current (V BE = -1.5 V) V CE = 700 V V CE = 700 V BV EBO Emitter-Base Breakdown Voltage (I C =0) I E = 10 mA V CEO(sus) Collector-Emitter Sustaining Voltage I C = 100 mA Collector Cut-Off Current (I B = 0) V CE = 400 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 0.5 A IC = 1 A IC = 2 A V BE(s at)∗ Base-Emitt er Saturation Voltage DC Current Gain I CEO h F E∗ Min. Typ . Tj = 125 oC 9 L = 25 mH Max. Un it 100 500 µA µA 18 V 400 V 250 µA IB = 0.1 A I B = 0.2 A I B = 0.4 A 0.5 1 1.3 V V V I C = 0.5 A IC = 1 A IC = 2 A IB = 0.1 A I B = 0.2 A I B = 0.4 A 1.0 1.2 1.3 V V V I C = 10 mA I C = 0.5 A Group A Group B IC = 2 A V CE = 5 V V CE = 5 V V CE = 5 V tr ts tf RESISTIVE LO AD Resistive T ime Storage Time Fall Time V CC = 125 V I B1 = 0.2 A T p = 30 µs IC = 1 A IB2 = -0.2 A (see fig.2) ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 1 A V BEoff = -5 V V c la mp = 200 V (see fig.1) I B1 = 0.2 A R BB = 0 Ω L = 50mH 10 10 18 8 22 40 0.4 3.2 0.25 0.8 0.16 0.7 4.5 0.4 µs µs µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 2/7 BUL118 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL118 Inductive Fall Time Inductive Storage Time Resistive Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BUL118 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BUL118 TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 6/7 BUL118 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 7/7