BYT60P-400 BYT260PIV-400 / BYT261PIV-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 60 A VRRM 400 V VF (max) 1.4 V trr (max) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 BYT261PIV-400 BYT260PIV-400 FEATURES AND BENEFITS n n n n VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 pF Inductance < 5 nH ISOTOPTM (Plastic) DESCRIPTION These rectifier devices are suited for free-wheeling function in converters and motor control circuits. Packaged in ISOTOP or SOD93, they are intended for use in Switch Mode Power Supplies. A K SOD93 (Plastic) ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current RMS forward current IF(RMS) IF(AV) IFSM Tstg Tj Parameter Average forward current δ = 0.5 Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature Value 400 Unit V tp=5 µs F=1kHz 1000 A ISOTOP 140 A SOD93 100 60 A ISOTOP 600 A SOD93 550 Tc = 70°C ISOTOP Tc = 80°C SOD93 - 40 to + 150 °C 150 °C TM: ISOTOP is a registered trademark of STMicroelectronics. May 2000 - Ed: 4D 1/7 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case Value 0.8 0.45 ISOTOP Per diode Total SOD93 Total 0.7 Coupling 0.1 Rth(c) Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * Parameter Test Conditions Forward voltage drop Tj = 25°C Min. Typ. IF = 60 A Reverse leakage current Tj = 25°C Unit V 1.4 Tj = 100°C IR ** Max. 1.5 VR = VRRM Tj = 100°C 60 µA 6 mA Max. 100 Unit ns Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: 2 P = 1.1 x IF(AV) + 0.0045 IF (RMS) RECOVERY CHARACTERISTICS (per diode) Symbol trr Test Conditions Tj = 25°C Min. IF = 1A VR = 30V dI F/dt = - 15A/µs Typ. 50 IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS Symbol tIRM IRM C= 2/7 VRP VCC Parameter Test Conditions M ax i m um rev ers e rec ov ery t im e dIF/dt = - 240 A/µs M ax i m um rev ers e rec ov ery c urrent dIF/dt = - 240 A/µs Turn-off overvoltage coefficient Tj = 100°C VCC = 120V IF = IF(AV) dIF/dt = - 60A/µs Lp = 0.8µH (see fig. 14) dIF/dt = - 480 A/µs dIF/dt = - 480 A/µs VCC = 200 V IF = 60 A Lp 0.05 µH Tj = 100°C (see fig. 13) Min. Typ. Max. Unit 75 ns 50 18 A 4 / 24 3.3 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 Fig. 1: Average forward power dissipation versus average forward current (per diode, for ISOTOP). Fig. 2: Peak current versus form factor (per diode, for ISOTOP). PF(av)(W) 110 100 90 80 70 60 50 40 30 20 10 0 IM(A) 350 δ = 0.5 δ = 0.2 300 δ = 0.1 δ=1 T P=75W 250 δ=tp/T δ = 0.05 tp 200 P=100W 150 100 T 0 10 20 30 40 50 δ=tp/T IF(av) (A) 50 60 P=50W P=25W tp 70 0 0.0 80 0.1 0.2 0.3 δ 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Average forward current versus ambient temperature (δ=0.5, per diode for ISOTOP). IF(av)(A) 70 Rth(j-a)=Rth(j-c) 60 SOD93 ISOTOP 50 40 Rth(j-a)=2.5°C/W 30 20 T 10 0 δ=tp/T 0 Tamb(°C) tp 25 50 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (SOD93). 75 100 150 Fig. 4-2: Non repetitive surge peak forward current versus overload duration (per diode, for ISOTOP). IM(A) 450 400 350 300 250 200 150 100 I M 50 0 1E-3 125 IM(A) 400 350 300 Tc=50°C Tc=50°C 250 Tc=25°C Tc=25°C 200 150 100 Tc=75°C t 50 t(s) δ=0.5 1E-2 Tc=75°C IM 1E-1 1E+0 0 1E-3 t t(s) δ=0.5 1E-2 1E-1 1E+0 3/7 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 Fig. 5-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode for ISOTOP). Fig. 5-2: Relative variation of thermal impedance junction to case versus pulse duration (SOD93). K=[Zth(j-c)/Rth(j-c)] K=[Zth(j-c)/Rth(j-c)] 1.0 0.5 1.0 δ = 0.5 δ = 0.5 0.5 δ = 0.2 δ = 0.2 δ = 0.1 δ = 0.1 0.2 0.2 T T Single pulse Single pulse δ=tp/T tp(s) 0.1 1E-3 1E-2 1E-1 tp(s) tp 1E+0 Fig. 6: Forward voltage drop versus forward current (maximum values, per diode for ISOTOP). 0.1 1E-3 δ=tp/T 1E-2 tp 1E-1 1E+0 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode for ISOTOP). IFM(A) C(pF) 500 200 Typical values Tj=100°C F=1MHz Tj=25°C 180 100 160 Tj=25°C 140 120 Tj=100°C 10 100 80 VFM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Fig. 8: Recovery charges versus dIF/dt (per diode for ISOTOP). 60 10 100 200 Fig. 9: Recovery current versus dI F/dt (per diode for ISOTOP). IRM(A) Qrr(µC) 50 1.6 1.4 VR(V) 1 IF=IF(av) 90% confidence Tj=100°C IF=IF(av) 90% confidence Tj=100°C 1.2 1.0 10 0.8 0.6 0.4 0.2 0.0 10 4/7 dIF/dt(A/µs) 20 50 100 200 500 1 10 dIF/dt(A/µs) 20 50 100 200 500 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 Fig. 10: Transient peak forward voltage versus dIF/dt (per diode for ISOTOP). Fig. 11: Forward recovery time versus dIF/dt (per diode for ISOTOP). VFP(V) 30 tfr(µs) 1.50 IF=IF(av) 90% confidence Tj=100°C 25 20 1.00 15 0.75 10 0.50 5 0 IF=IF(av) 90% confidence Tj=100°C 1.25 0.25 dIF/dt(A/µs) 0 100 200 300 400 0.00 500 dIF/dt(A/µs) 0 100 200 300 400 500 Fig. 12: Dynamic parameters versus junction temperature. Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C] 1.50 1.25 1.00 0.75 IRM Qrr 0.50 0.25 Tj(°C) 0 25 50 Fig. 13: Turn-off switching characteristics (without serie inductance). 75 100 125 150 Fig. 14: Turn-off switching characteristics (with serie inductance). IF IF DUT DUT VCC di F/dt LC di F/ dt LC LP VF VCC VF VCC VRP I RM VCC tIRM 5/7 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. Millimeters Min. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P 6/7 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 24.80 14.90 12.60 3.50 4.10 4.60 4.00 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 typ. 15.10 12.80 4.30 4.30 5.00 4.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 PACKAGE MECHANICAL DATA SOD93 Plastic DIMENSIONS REF. Min. 4.70 1.17 A C D D1 E F F3 G H L L2 L3 L5 L6 O n n n n n Millimeters 0.50 1.10 10.80 14.70 3.95 4.00 Inches Typ. Max. 4.90 1.37 2.50 1.27 0.78 1.30 1.75 11.10 15.20 12.20 16.20 18.0 4.15 31.00 4.10 Min. Typ. Max. 0.185 0.193 0.046 0.054 0.098 0.050 0.020 0.031 0.043 0.051 0.069 0.425 0.437 0.578 0.598 0.480 0.638 0.709 0.156 0.163 1.220 0.157 0.161 Ordering type Marking Package Weight Base qty Delivery mode BYT60P-400 BYT60P-400 SOD93 3.79 g. 30 Tube BYT260PIV-400 BYT260PIV-400 ISOTOP 28 g. (without screws) 10 Tube BYT261PIV-400 BYT261PIV-400 ISOTOP 28 g. (without screws) 10 Tube Cooling method: by conduction (C) Recommended torque value (ISOTOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Recommended torque value (SOD93): 0.8 N.m. Maximum torque value (SOD93): 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in Italy - All rights reserved. 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