STMICROELECTRONICS STTH20002TV1

STTH20002TV
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
Up to 2 x 120 A
A1
K1
VRRM
200 V
A2
K2
Tj
150°C
VF (typ)
0.75 V
trr (typ)
41 ns
K1
A1
K2
FEATURES AND BENEFITS
■
■
■
■
■
A2
Suited for SMPS
Very Low Forward Losses
Low recovery time
High surge current capability
Insulated:
Insulating voltage=2500VRMS
Capacitance = 55pF
ISOTOP
STTH20002TV1
DESCRIPTION
Dual rectifier suited for welding equipment, high
power industrial application.
Packaged in Isotop, this device is intended for use
in the secondary rectification of the applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS)
RMS forward voltage
IF(AV)
Average forward current
δ = 0.5
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
Order Codes
Part Number
STTH20002TV1
July 2004
Tc = 95°C
Per diode
Tc = 80°C
Per diode
tp = 10ms sinusoidal
Value
200
Unit
V
170
A
100
120
1000
A
A
-55 to + 150
°C
150
°C
Marking
STTH20002TV1
REV. 2
1/5
STTH20002TV
THERMAL RESISTANCE
Symbol
Rth(j-c)
Rth(c)
Parameter
Junction to case
Maximum
Unit
Per diode
0.52
°C/W
Total
0.31
Coupling
0.1
°C/W
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
Parameter
Test conditions
Reverse leakage current Tj = 25°C
Min.
VR = VRRM
Tj = 125°C
VF **
Forward voltage drop
Tj = 25°C
Tj = 150°C
80
Max.
Unit
100
µA
800
IF = 100A
1.05
IF = 200A
1.20
IF = 100A
0.75
IF = 200A
Pulse test:
Typ
V
0.85
1.05
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.002 I F (RMS)
DYNAMIC CHARACTERISTICS (per diode)
Symbol
Parameter
trr
Reverse recovery
time
Tj = 25°C
IRM
Reverse recovery
current
Tj = 125°C IF = 100A
VR = 160V
dIF/dt = 200 A/µs
tfr
Forward recovery
time
Tj = 25°C
IF = 100A
dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
VFP
Forward recovery
voltage
Tj = 25°C
IF = 100A
2/5
Test conditions
IF = 1A dIF/dt = 200 A/µs
VR =30V
dIF/dt = 200 A/µs
Min. Typ Max. Unit
41
50
ns
11.5
15
A
800
ns
2.5
V
®
STTH20002TV
Fig. 1: Peak current versus duty cycle (per diode).
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
IM(A)
IFM(A)
600
200
180
500
T
160
P = 80W
δ=tp/T
400
140
tp
Tj=150°C
120
300
100
P = 120W
Tj=25°C
80
P = 160W
200
60
40
100
20
δ
VFM(V)
0
0
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.0
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
IFM(A)
1.0
200
180
160
140
Tj=150°C
120
100
Tj=25°C
80
60
Single pulse
40
20
VFM(V)
tp(s)
0
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Fig. 5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
Qrr(nC)
C(pF)
1000
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
IF=100A
VR=160V
900
800
700
600
Tj=125°C
500
1000
400
Tj=25°C
300
200
100
VR(V)
100
3/5
dIF/dt(A/µs)
0
1
10
100
1000
10
100
1000
®
STTH20002TV
Fig. 6: Reserve recovery time versus dIF/dt
(typical values, per diode).
Fig. 7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
trr(ns)
IRM(A)
120
25
IF=100A
VR=160V
IF=100A
VR=160V
100
20
Tj=125°C
80
15
Tj=125°C
Tj=25°C
60
10
40
Tj=25°C
5
20
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
10
100
1000
10
100
1000
Fig. 8: Dynamic parameters versus junction
temperature.
QRR; IRM [Tj] / QRR; IRM [Tj=125°C]
1.4
IF=100A
VR=160V
1.2
1.0
IRM
0.8
QRR
0.6
0.4
0.2
Tj(°C)
0.0
25
50
®
75
100
125
150
4/5
STTH20002TV
PACKAGE MECHANICAL DATA
ISOTOP
REF.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
11.80
12.20
0.465
0.480
8.90
9.10
0.350
0.358
7.8
8.20
0.307
0.323
0.75
0.85
0.030
0.033
1.95
2.05
0.077
0.081
37.80
38.20
1.488
1.504
31.50
31.70
1.240
1.248
25.15
25.50
0.990
1.004
23.85
24.15
0.939
0.951
24.80 typ.
0.976 typ.
14.90
15.10
0.587
0.594
12.60
12.80
0.496
0.504
3.50
4.30
0.138
0.169
4.10
4.30
0.161
0.169
4.60
5.00
0.181
0.197
4.00
4.30
0.157
0.69
4.00
4.40
0.157
0.173
30.10
30.30
1.185
1.193
ORDERING INFORMATION
Ordering type
STTH20002TV1
■
■
Marking
STTH20002TV1
Package
Weight
Base qty
Delivery
mode
ISOTOP
27 g
(without
screws)
10
(with
screws)
Tube
Epoxy meets UL94, V0
Cooling method: by conduction (C)
REVISION HISTORY
Table 1: Revision history
Date
26-May-2004
13-Jul-2004
Revision
1
2
Description of Changes
First issue
Figure 6 legend corrected: “Forward” changed to “Reverse”
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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®