DTV1500LFP ® (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MAIN PRODUCTS CHARACTERISTICS K IF(AV) 4A VRRM 1500 V VF (max) 1.5 V trr (max) 170 ns A FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ ■ A High breakdown voltage capability High frequency operation Specified turn on switching characteristics Very fast recovery diode Low static and peak forward voltage drop for low dissipation Insulated package: TO-220FPAC Insulating voltage = 2000V DC Capacitance = 12pF Planar technology allowing high quality and best electrical characteristics K TO-220FPAC DTV1500LFP DESCRIPTION High voltage diode especially designed for horizontal deflection stage in standard and high resolution displays for TV’s and monitors. This device is packaged in TO-220FPAC (insulated package). ABSOLUTE MAXIMUM RATINGS Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IFSM Surge non repetitive forward current Tstg Storage temperature Tj Maximum operating junction temperature January 2002 - Ed: 2B tp = 10ms sinusoidal Value Unit 1500 V 15 A 50 A - 65 to 150 °C 150 °C 1/5 DTV1500LFP THERMAL RESISTANCE Symbol Rth(j-c) Parameter Value Unit 5.8 °C/W Junction to Case thermal resistance STATIC ELECTRICAL CHARACTERISTICS Value Symbol Parameter Test Conditions Unit Min IR VF * ** Reverse leakage current Forward voltage drop VR = 1500V IF = 4A Typ Tj = 25°C Max 100 µA Tj = 125°C 100 1000 µA Tj = 25°C 1.2 1.7 V Tj = 125°C 1.1 1.5 pulse test : * tp = 5 ms , δ < 2% ** tp = 380 µs, δ < 2% RECOVERY CHARACTERISTICS Value Symbol Parameter Test Conditions Unit Min Typ Max 170 trr Reverse recovery time Tj = 25°C IF = 1 A dIF/dt = -50A/µs VR = 30V 130 trr Reverse recovery time Tj = 25°C IF = 100mA IR = 100mA IRR = 10mA 850 ns ns TURN-ON SWITCHING CHARACTERISTICS Value Symbol Parameter Test Conditions Unit Min tfr VFp Forward recovery time Peak forward voltage Max Tj = 100°C IF = 4 A dIF/dt = 80 A/µs VFR = 3 V 450 Tj = 25°C IF = 6.5A dIF/dt = 50 A/µs VFR = 3V 450 Tj = 100°C IF = 4A dIF/dt = 80 A/µs 28 36 Tj = 25°C IF =6.5A dIF/dt = 50 A/µs 13 17 To evaluate the maximum conduction losses use the following equation : P = 1.2 x IF(AV) + 0.075 x IF2(RMS) 2/5 Typ ns V DTV1500LFP Fig. 1: Power dissipation versus peak forward current (triangular waveform, δ = 0.45) Fig. 2: Average forward current versus ambient temperature PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IF(av)(A) 5 4 3 2 T 1 Ip(A) 0 1 2 3 4 5 6 Fig. 3: Forward voltage drop versus forward curent 0 δ=tp/T 0 50 75 100 125 150 IM(A) 40 Typical Tj=125°C 35 Maximum Tj=125°C 30 Maximum Tj=25°C 25 Tc=25°C 20 Tc=75°C 15 10 VFM(V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Tc=100°C IM 5 Fig. 5: Reverse recovery charges versus dIF/dt t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 6: Reverse recovery current versus dIF/dt Qrr(µC) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 25 Fig. 4: Non repetitive surge peak forward current versus overload duration IFM(A) 10 9 8 7 6 5 4 3 2 1 0 0.4 Tcase(°C) tp IRM(A) 3.0 IF=IF(av) 90% confidence Tj=125°C 2.5 IF=IF(av) 90% confidence Tj=125°C 2.0 1.5 1.0 0.5 dIF/dt(A/µs) 0.2 0.5 1.0 2.0 5.0 0.0 0.1 dIF/dt(A/µs) 0.2 0.5 1.0 2.0 5.0 3/5 DTV1500LFP Fig. 7: Transient peak forward voltage versus dIF/dt Fig. 8: Forward recovery time versus dIF/dt tfr(ns) VFP(V) 50 45 40 35 30 25 20 15 10 5 0 IF=IF(av) 90% confidence Tj=125°C dIF/dt(A/µs) 0 20 40 60 80 100 120 140 Fig. 9: Dynamic parameters versus junction temperature 700 650 600 550 500 450 400 350 300 250 200 IF=IF(av) 90% confidence Tj=125°C Vfr=3V dIF/dt(A/µs) 0 20 40 60 80 100 120 140 Fig. 10: Junction capacitance versus reverse voltage applied (typical values) C(pF) VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C] 1.2 50 Tj=25°C F=1MHz 1.0 0.8 10 VFP 0.6 IRM 0.4 Qrr 0.2 Tj(°C) 0.0 0 20 40 60 80 VR(V) 100 120 140 Fig. 11: Relative variation of thermal impedance junction to case versus pulse duration K=[Zth(j-c)/Rth(j-c)] 1.0 δ = 0.5 0.5 δ = 0.2 δ = 0.1 0.2 T Single pulse t(s) 0.1 1E-2 4/5 1E-1 δ=tp/T 1E+0 tp 1E+1 1 1 10 100 200 DTV1500LFP PACKAGE DATA TO-220FPAC DIMENSIONS REF. Millimeters Inches A B D E F F1 G G1 H L2 L3 L4 L5 L6 L7 Dia. Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 A H B Dia L6 L2 L7 L3 L5 D F1 L4 E F G1 G ■ ■ ■ ■ ■ Type Marking Package Weight Base qty Delivery mode DTV1500LFP DTV1500LFP TO-220FPAC 1.8g 50 Tube Cooling method: C Epoxy meets UL94-V0 Torquevalue: 0.55 m.Ntyp (0.7m.Nmax) Electrical Isolation: 2000V DC Capacitance: 12pF Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5