IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI ■ ■ ■ ■ ■ ■ ■ V DSS R DS( on) ID 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 1 3 2 TO-220 1 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit IRFZ40 IRFZ40FI Drain-source Voltage (V GS = 0) 50 50 V Drain- gate Voltage (R GS = 20 kΩ) 50 50 V ± 20 Gate-source Voltage V ID Drain Current (cont.) at Tc = 25 oC 50 27 A ID o Drain Current (cont.) at Tc = 100 C 35 19 A Drain Current (pulsed) 200 200 A Total Dissipation at Tc = 25 o C 150 45 W Derating Factor 1 0.3 W/ o C Insulation Withstand Voltage (DC) 2000 ID M(•) P tot V ISO T stg Tj Storage Temperature Max. Operating Junction Temperature V -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area July 1993 1/9 IRFZ40/FI THERMAL DATA R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case TO-220 ISOWATT220 1 3.33 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W 62.5 0.5 300 o C/W C/W o C Max Value Unit o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 50 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 400 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 100 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 35 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 50 Unit V T c = 125 oC V GS = ± 20 V 250 1000 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS( on) Static Drain-source On Resistance V GS = 10V ID = 29 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max VG S = 10 V Min. Typ. Max. Unit 2 2.9 4 V 0.022 0.028 Ω 50 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 29 A VG S = 0 Min. Typ. 17 22 1700 630 200 Max. Unit S 2200 850 260 pF pF pF IRFZ40/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Parameter Test Conditions t d(on) tr t d(off ) tf Turn-on Time Rise Time Turn-off Delay Time Fall Time V DD = 25 V ID = 29 A R G = 4.7 Ω V GS = 10 V (see test circuit) Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge I D = 64 A V GS = 10 V V DD = Max Rating x 0.8 (see test circuit) Min. Typ. Max. Unit 50 110 60 25 70 160 90 35 ns ns ns ns 50 15 27 70 nC nC nC Typ. Max. Unit 50 200 A A SOURCE DRAIN DIODE Symbol Parameter IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage Test Conditions V GS = 0 Min. IS D = 50 A 2 V t rr Q rr Reverse Recovery Time Reverse Recovery Charge I SD = 50 A V DD = 30 V di/dt = 100 A/µs T j = 150 o C 150 ns 0.45 µC (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220 3/9 IRFZ40/FI Thermal Impedance for TO-220 Thermal Impedance for ISOWATT220 Derating Curve for TO-220 Derating Curve for ISOWATT220 Output Characteristics Transfer Characteristics 4/9 IRFZ40/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/9 IRFZ40/FI Source-drain Diode Forward Characteristics Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms Switching Time Test Circuit Gate Charge Test Circuit 6/9 IRFZ40/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 IRFZ40/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 Ø 1 2 3 L2 8/9 L4 P011G IRFZ40/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9