IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.135 Qg (Max.) (nC) 190 Qgs (nC) 59 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current 84 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Single • Low RDS(on) D • Lead (Pb)-free Available TO-247 APPLICATIONS G • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply S D G S • High Speed Power Switching N-Channel MOSFET • Hard Switching and High Frequency Circuits ORDERING INFORMATION Package TO-247 IRFP32N50KPbF SiHFP32N50K-E3 IRFP32N50K SiHFP32N50K Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 32 20 A IDM 130 3.7 W/°C Single Pulse Avalanche Energyb EAS 450 mJ Repetitive Avalanche Currenta IAR 32 A Repetitive Avalanche Energya EAR 46 mJ PD 460 W dV/dt 13 V/ns TJ, Tstg - 55 to + 150 Linear Derating Factor Maximum Power Dissipation Peak Diode Recovery TC = 25 °C dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 0.87 mH, RG = 25 Ω, IAS = 32 A. c. ISD ≤ 32 A, dI/dt ≤ 197 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may applyrom case. Document Number: 91221 S-81361-Rev. B, 07-Jul-08 www.vishay.com 1 IRFP32N50K, SiHFP32N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.26 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.54 - V/°C VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ± 100 VDS = 500 V, VGS = 0 V - - 50 VDS = 400 V, VGS = 0 V, TJ = 150 °C - - 250 ID = 32 Ab VGS = 10 V VDS = 50 V, ID = 32 A µA - 0.135 0.16 Ω 14 - - S - 5280 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V Coss eff. Total Gate Charge Qg Gate-Source Charge Qgs - 550 - - 45 - VDS = 1.0 V, f = 1.0 MHz - 5630 - VDS = 400 V, f = 1.0 MHz - 155 - - 265 - - - 190 - - 59 VDS = 0 V to 400 VGS = 10 V Vc ID = 32 A, VDS = 400 Vb pF nC Gate-Drain Charge Qgd - - 84 Turn-On Delay Time td(on) - 28 - - 120 - - 48 - - 54 - - - 32 - - 130 - - 1.5 - 530 800 ns - 9.0 13.5 µC - 30 - A Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 250 V, ID = 32 A, RG = 4.3 Ω, VGS = 10 Vb tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Body Diode Reverse Recovery Current IRRM Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 32 A, VGS = 0 Vb TJ = 25 °C, IF = 32 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91221 S-81361-Rev. B, 07-Jul-08 IRFP32N50K, SiHFP32N50K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Top 100 Bottom 1000 VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 10 1 5.0 V 0.1 100 TJ = 150 °C 10 TJ = 25 °C 1 20 μs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 4 100 VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom 5.0 V ID, Drain-to-Source Current (A) Top 5.0 V 1 20 μs PULSE WIDTH TJ = 150 °C 0.1 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91221 S-81361-Rev. B, 07-Jul-08 8 9 11 12 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) Fig. 1 - Typical Output Characteristics 10 7 5 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 100 VDS = 50 V 20 μs PULSE WIDTH 0.1 100 3.0 ID = 32 A 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 VGS = 10 V 60 80 100 120 140 160 TJ, Junction Temperature Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFP32N50K, SiHFP32N50K Vishay Siliconix VGS = 0 V, Ciss = Cgs + Cgd, Cds Crss = Cgd Coss = Cds + Cgd 10000 C, Capacitance (pF) 1000 f = 1 MHz SHORTED ISD, Reverse Drain Current (A) 1000000 Ciss 1000 Coss 100 100 TJ = 150 °C 10 TJ = 25 °C 1 Crss 10 1 10 100 0.1 0.2 1000 VDS, Drain-to-Source Voltage (V) 1.6 VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 1000 20 ID = 32 A OPERATING IN THIS AREA LIMITED BY RDS(on) VDS = 400 V VDS = 250 V VDS = 100 V 16 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) VGS = 0 V 1.3 0.9 0.6 12 8 100 10 μs 100 μs 10 1 ms 4 0 0 40 160 80 120 QG, Total Gate Charge (nC) 200 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1 10 TC = 25 °C TJ = 150 °C Single Pulse 10 ms 100 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91221 S-81361-Rev. B, 07-Jul-08 IRFP32N50K, SiHFP32N50K Vishay Siliconix RD VDS 35 VGS 25 ID, Drain Current (A) D.U.T. RG 30 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 20 Fig. 10a - Switching Time Test Circuit 15 10 VDS 90 % 5 0 50 25 75 125 100 TC, Case Temperature (°C) 150 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 9 - Maximum Drain Current vs. Case Temperature Thermal Response (ZthJC) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V L VDS D.U.T RG IAS 20 V tp tp Driver + A - VDD 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91221 S-81361-Rev. B, 07-Jul-08 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFP32N50K, SiHFP32N50K Vishay Siliconix 800 EAS, Single Pulse Avalanche Energy (mJ) TOP BOTTOM 640 ID 7A 10 A 16 A 480 320 160 0 25 50 75 100 150 125 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91221 S-81361-Rev. B, 07-Jul-08 IRFP32N50K, SiHFP32N50K Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91221. Document Number: 91221 S-81361-Rev. B, 07-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1