Auto SPM FTCO3V455A1 ® 3-Phase Inverter Automotive Power Module General Description Features The FTCO3V455A1 is a 40V low Rds(on) automotive qualified power module featuring a 3-phase MOSFET inverter optimized for 12V battery systems. It includes a precision shunt resistor for current sensing an NTC for temperature sensing and an RC snubber circuit. • 40V-150A 3-phase trench MOSFET inverter bridge • 1% precision shunt current sensing • Temperature sensing • DBC substrate The module utilizes Fairchild's trench MOSFET technology and it is designed to provide a very compact and high performance variable speed motor drive for applications like electric power steering, electro-hydraulic power steering, electric water pumps, electric oil pumps. The power module is 100% lead free, RoHS and UL compliant. • 100% lead free and RoHS compliant 2000/53/C directive. • UL94V-0 compliant • Isolation rating of 2500Vrms/min • Mounting through screws • Automotive qualified Benefits • Low junction-sink thermal resistance • Low inverter electrical resistance • High current handling • Compact motor design • Highly integrated compact design • Better EMC and electrical isolation • Easy and reliable installation • Improved overall system reliability Applications Figure 1.schematic • Electric and Electro-Hydraulic Power Steering • Electric Water Pump • Electric Oil Pump • Electric Fan Figure 2. package Absolute Maximum Ratings (TJ = 25°C, Symbol Unless Otherwise Specified) Rating Unit VDS(Q1~Q6) Drain to Source Voltage Parameter 40 V VGS(Q1~Q6) Gate to Source Voltage ±20 V ID(Q1~Q6) Drain Current Continuous(TC = 25°C, VGS = 10V) 150 A EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ PD Power dissipation 115 W TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature 125 °C ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 1 www.fairchildsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module April 2013 FTCO3V455A1 3-Phase Inverter Automotive Power Module Pin Configuration Figure 3. Pin Description Pin Number 1 Pin Name Pin Descriptions TEMP 1 NTC Thermistor Terminal 1 2 TEMP 2 NTC Thermistor Terminal 2 3 PHASE W SENSE Source of HS W and Drain of LS W 4 GATE HS W Gate of HS phase W MOSFET 5 GATE LS W Gate of LS phase W MOSFET 6 PHASE V SENSE Source of HS V and Drain of LS V 7 GATE HS V Gate of HS phase V MOSFET 8 GATE LS V Gate of LS phase V MOSFET 9 PHASE U SENSE Source of HS U and Drain of LS U 10 GATE HS U 11 VBAT SENSE 12 GATE LS U 13 SHUNT P 14 SHUNT N 15 VBAT Positive battery terminal 16 GND 17 PHASE U Negative battery terminal Motor phase U 18 PHASE V Motor phase V 19 PHASE W Motor phase W ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 Gate of HS phase U MOSFET Drain of HS U, V and W MOSFET Gate of LS phase U MOSFET Source of LS U, V W MOSFETS / Shunt + Negative shunt terminal (shunt -) 2 www.fairchildsemi.com VBAT VBAT SENSE GATE HS U GATE HS V GATE HS W PHASE U PHASE1 SENSE PHASE V PHASE2 SENSE PHASE W PHASE3 SENSE GATE L S U GATE L S V GATE LS W SHUNT P CSR SHUNT N GND TEMP 1 TEMP 2 Figure 4. ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 3 www.fairchildsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Internal Equivalent Circuit FTCO3V455A1 3-Phase Inverter Automotive Power Module Flammability Information All materials present in the power module meet UL flammability rating class 94V-0 or higher. Solder Solder used is a lead free SnAgCu alloy. Compliance to RoHS The Power Module is 100% lead free and RoHS compiant with the 2000/53/C directive. ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 4 www.fairchildsemi.com Symbol Unless Otherwise Specified) Parameter Rating Unit VDS(Q1~Q6) Drain to Source Voltage 40 V VGS(Q1~Q6) Gate to Source Voltage ±20 V ID(Q1~Q6) Drain Current Continuous(TC = 25°C, V GS = 10V) 150 A EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ PD Power dissipation 115 W TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature 125 °C Thermal Resistance Symbol Min. Typ. Max. Unit Q1 Thermal Resistance J -C - 1.3 1.7 °C/W Thermal ResisQ2 Thermal Resistance J -C Junction to tance case, Single Inverter Q3 Thermal Resistance J -C FET, PKG center Q4 Thermal Resistance J -C - 1.3 1.7 °C/W - 1.3 1.7 °C/W - 1.2 1.6 °C/W (*Note 2) - 1.2 1.6 °C/W 1.2 Rthjs Parameter Q5 Thermal Resistance J -C Q6 Thermal Resistance J -C - 1.6 °C/W TJ Maximum Junction Temperature - 175 °C TS Operating Sink Temperature -40 120 °C TSTG Storage Temperature -40 125 °C Notes: .* Note 1 - Starting Tj=25°C,Vds=20V,Ias=64A,L= 480uH. * Note 2 -These values are based on Thermal simulations and PV level measurements. These values assume a single MOSFET is on, and the test condition for referenced temperature is “Package Center”. This means that the DT is measured between the Tj of each MOSFET and the bottom surface temperature immediately under the thermal media in the center of the package. ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 5 www.fairchildsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Absolute Maximum Ratings (TJ = 25°C, Symbol VTH Parameter D-S Breakdown Voltage (Inverter MOSFETs) Gate to Source Voltage (Inverter MOSFETs) Threshold Voltage (Inverter MOSFETs) VSD MOSFET Body Diode Forward Voltage BVDSS VGS RDS(ON)Q1 RDS(ON)Q2 RDS(ON)Q3 RDS(ON)Q4 RDS(ON)Q5 RDS(ON)Q6 IDSS IGSS Inverter High Side MOSFETs Q1 (See *Note3) Inverter High Side MOSFETs Q2 (See *Note3) Inverter High Side MOSFETs Q3 (See *Note3) Inverter Low Side MOSFETs Q4 (See *Note3) Inverter Low Side MOSFETs Q5 (See *Note3) Inverter Low Side MOSFETs Q6 (See *Note3) Inverter MOSFETs (UH,UL,VH,VL,WH,WL) Inverter MOSFETs Gate to Source Leakage Current Total loop resistance VLINK(+) - V0 (-) Unless Otherwise Specified) Test Conditions VGS=0, ID=250uA VGS=VDS, ID=250uA, Tj=25°C Min Typ Max Units 40 - - V -20 - 20 V 2.0 2.8 4.0 V 0.8 1.28 V VGS=0V, IS=80A, Tj=25°C VGS=10V, ID=80A, Tj=25°C - 1.15 1.66 mΩ VGS=10V, ID=80A, Tj=25°C - 1.22 1.73 mΩ VGS=10V, ID=80A, Tj=25°C - 1.31 1.82 mΩ VGS=10V, ID=80A, Tj=25°C - 1.36 1.87 mΩ VGS=10V, ID=80A, Tj=25°C - 1.57 2.08 mΩ VGS=10V, ID=80A, Tj=25°C - 1.86 2.32 mΩ VGS=0V, VDS=32V, Tj=25°C - - 1.0 uA VGS=±20V - - ±100 nA VGS=10V,ID=80A,Tj=25°C - 4.69 5.5 mΩ * Note 3 - All Mosfets have same die size and Rdson. The different Rdson values listed in the datasheet are due to the different access points available inside the module for Rdson measurement. While the high side MOSFETs (Q1, Q2, Q3) have source sense wire bonds, the low side mosfets (Q4, Q5, Q6) do not have source sense wire bonds, thus resulting in higher Rdson values. Temperature Sense (NTC Thermistor) Symbol Voltage Test Conditions Current=1mA, Temperature=25°C Test Time Min 7.5 Typ - Max 12 Units V Test Time Min Typ Max Units 0.46 - 0.53 mΩ T=0.5ms Current Sense Resistor Symbol Test Conditions Resistance Current Senset resistor current = 80A ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 T=0.5ms 6 www.fairchildsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Electrical Characteristics (TJ = 25°C, 4000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) 500 If R = 0 10us tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) T = 25oC C 1 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 100 10 100 0.1 1 tAV, TIME IN AVALANCHE (ms) 1000 5000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 5. Forward Bias Safe Operating Area 160 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VDD = 5V 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 0 2.0 2.5 3.0 3.5 VGS = 10V VGS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 4.0 4.5 120 VGS = 4.5V 80 VGS = 4V 40 VGS = 3.5V 0 5.0 0 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 40 TJ = 25oC TJ = 175oC 20 10 0 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 2 3 4 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Transfer Characteristics 30 1 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) 50 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 7 www.fairchildsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only) 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250μA 1.0 0.8 0.6 0.4 -80 0 40 80 120 160 -40 TJ, JUNCTION TEMPERATURE(oC) 200 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FTCO3V455A1 Rev. C2 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 10 ID = 80A VDD = 15V 8 VDD = 25V 6 VDD = 20V 4 2 0 0 50 100 150 200 250 Qg, GATE CHARGE(nC) Figure 13. Capacitance vs Drain to Source Voltage ©2013 Fairchild Semiconductor Corporation 1.05 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 40000 100 0.1 1.10 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = 250μA Figure 14. Gate Charge vs Gate to Source Voltage 8 www.fairchildsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only) Parameter Limits Condition Device Flatness Note Fig.15 Mounting Screw: - M3, Recommended 0.7N.m Mounting Torque Unit Min. 0 Typ. - Max. +200 0.6 0.7 0.8 N.m - 20 - g Weight um 1 Fig. 15. Flatness Measurement Position Package Marking and Ordering Information Device Marking FTCO3V455A1 ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 MOSFET PCF33478 9 Packing Type Quantity Tube 11 www.fairchildsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Mechanical Characteristics and Ratings FTCO3V455A1 3-Phase Inverter Automotive Power Module VBAT TEMP 1 TEMP 2 PHASE W SENSE GATE HS W GATE LS W PHASE V SENSE GATE HS V GATE LS V PHASE U SENSE VBAT SENSE GATE HS U GATE LS U SHUNT P SHUNT N Detailed Package Outline Drawings GND PHASE U PHASE V PHASE W Figure 16. ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 10 www.fairchildsemi.com FTCO3V455A1 3-Phase Inverter Automotive Power Module Detailed Package Outline Drawings Figure 17. ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 11 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FTCO3V455A1