MJE13007 SILICON NPN SWITCHING TRANSISTOR ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS ■ SWITCHING REGULATORS ■ MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. It is are inteded for use in motor control, switching regulators etc. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CEV Collector-Emitter Voltage (V BE = -1.5V) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 8 A 16 A IC I CM IB I BM Parameter Collector Peak Current Base Current 4 A Base Peak Current 8 A Emitter Current 12 A I EM Emitter Peak Current 24 A P t ot Total Dissipation at T c ≤ 25 C IE T stg Tj June 1998 o Storage Temperature Max. O perating Junction Temperature 80 W -65 to 150 o C 150 o C 1/4 MJE13007 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 1.56 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) V CE = rated V CEV V CE = rated V CEV Emitter Cut-off Current (I C = 0) V EB = 9 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ V BE(s at)∗ h FE∗ fT C CBO Test Cond ition s Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min. o T c = 100 C I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A Typ . Max. Un it 1 5 mA mA 1 mA 400 IB IB IB IB = = = = 0.4 A 1 A 2 A 1 A IC = 2 A IC = 5 A IC = 5 A IB = 0.4 A IB = 1 A IB = 1 A DC Current G ain IC = 2 A IC = 5 A V CE = 5 V V CE = 5 V Transition F requency I C = 0.5 A Output Capacitance IE = 0 VCE = 10 V V CB = 10 V V Tc = 100 oC o Tc = 100 C 8 6 f = 1 MHz 1 1.5 3 2 V V V V 1.2 1.6 1.5 V V V 40 30 4 f = 0.1 MHz MHz 110 pF RESISTIVE LOAD Symb ol Parameter t on Turn-on T ime ts St orage Time tf Fall Time Test Co nditio ns Min . Typ. V CC = 125 V I C = 5 A I B1 = -I B2 = 1 A t p = 25 µs Duty Cycle < 1% Max. Unit 0.7 µs 3 ms 0.7 ms Max. Unit INDUCTIVE LOAD Symb ol Parameter Test Co nditio ns Typ. tf Fall Time V CC = 125 V IC = 5 A I B1 = 1 A t p = 25 µs Duty Cycle < 1% 0.3 µs tf Fall Time V CC = 125 V IC = 5 A I B1 = 1 A t p = 25 µs Duty Cycle < 1% T c = 100 o C 0.6 µs * Pulsed: Pulse duration = 300 µs, duty cycle 2 % 2/4 Min . MJE13007 TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 MJE13007 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 4/4