MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET MOSFET T YPE MTP3055E ■ ■ ■ ■ ■ V DSS R DS(on) ID 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Value Un it Drain-source Voltage (VGS = 0) Parameter 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 12 A IDM Drain Current (pulsed) at Tc = 100 C 9 A Drain Current (pulsed) 48 A I DM (•) P tot Ts tg Tj o o T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature 40 W -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area First digit of the datecode being Z or K identifies silicon characterized in this datasheet. July 1999 1/8 MTP3055E THERMAL DATA R thj -case R thj -amb R t hc-s Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose o 3.75 62.5 0.5 300 C/W oC/W o C/W o C Max Value Unit AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 12 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25 V) 50 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating x 0.8 IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 60 Unit V T c = 125 o C V GS = ± 20 V 1 10 µA µA ± 100 nA Max. Unit ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V ID = 7 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. Typ. 2 2.9 4 V 0.1 0.15 Ω 12 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/8 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 6 A V GS = 0 Min. Typ. Max. Unit 4 6 S 760 100 30 pF pF pF MTP3055E ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbo l Parameter Test Con ditions Min. Typ. Max. Unit t d(on) tr t d(of f) tf Turn-on Time Rise Time Turn-off Delay T ime Fall T ime V DD = 30 V I D = 7 A R G = 50 Ω V GS = 10 V (see test circuit) 20 65 70 35 ns ns ns ns Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge I D = 12 A V GS = 10 V V DD = 40 V (see test circuit) 15 7 5 nC nC nC SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr Parameter Test Con ditions Min. Typ. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 12 A V GS = 0 Reverse Recovery Time Reverse Recovery Charge I SD = 12 A V DD = 30 V di/dt = 100 A/µs T j = 150 o C Max. Unit 12 48 A A 2.0 V 65 ns 0.17 µC (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 MTP3055E Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 MTP3055E Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 MTP3055E Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 MTP3055E TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 MTP3055E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com .