STMICROELECTRONICS BCY58

BCY58
BCY59
LOW NOISE AUDIO AMPLIFIERS
DESCRIPTION
The BCY58 and BCY59 are silicon planar epitaxial
NPN transistors in Jedec TO-18 metal case.
They are intended for use in audio input stages,
driver stages and low-noise input stages. The complementary PNP types are respectively the BCY78
and BCY79.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
Parameter
BCY58
BCY59
Unit
V CES
Collector-emitter Voltage (V BE = 0)
32
45
V
V CEO
Collector-emitter Voltage (I B = 0)
32
45
V
V EBO
Emitter-base Voltage (I C = 0)
IC
Collector Current
IB
Base Current
Pt o t
T s t g, T j
January 1989
Total Power Dissipation at T amb ≤ 25 °C
at T c as e ≤ 45 °C
Storage and Junction Temperature
7
V
200
mA
50
mA
0.39
1
mW
W
– 65 to 200
°C
1/6
BCY58-BCY59
THERMAL DATA
R t h j- cas e
R t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
150
450
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
I CE S
I CE X
I E BO
Parameter
Collector Cutoff Current
(V BE = 0)
Collector Cutoff Current
(V BE = – 0.2 V)
Test Conditions
For BCY58
V CE = 32 V
V CE = 32 V
For BCY59
V CE = 45 V
V CE = 45 V
For BCY58
V CE = 32 V
For BCY59
V CE = 45 V
Max.
Unit
T amb = 150 °C
0.1
0.1
10
10
nA
µA
T amb = 150 °C
0.1
0.1
10
10
nA
µA
T amb = 100 °C
20
µA
T amb = 100 °C
20
µA
10
nA
V EB = 5 V
Collector-emitter Breakdown
Voltage (I B = 0)
I C = 2 mA
(BR)EBO *
Emitter-base Breakdown Voltage
(I C = 0)
I E = 10 µA
V CE( sat )*
Collector-Emitter Saturation
Voltage
I C = 10 mA
I C = 100 mA
I B = 0.25 mA
I B = 2.5 mA
Base-emitter Voltage
I C = 2 mA
I C = 100 mA
V CE = 5 V
V CE = 1 V
Base-emitter Saturation Voltage
I C = 10 mA
I C = 100 mA
I B = 0.25 mA
I B = 2.5 mA
DC Current Gain
I C =10 µA
V CE = 5 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
V CE = 5 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
V CE = 1 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
V CE =1 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
V (BR)CE O *
V BE
V B E ( s at)*
h F E*
I C = 2 mA
I C =10 mA
I C =100 mA
*
Typ.
Emitter cutoff Current
(I C = 0)
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
2/6
For BCY58
For BCY59
Min.
32
45
V
V
7
V
0.12
0.4
0.35
0.7
V
V
0.55
0.65
0.75
0.7
V
V
0.6
0.75
0.7
0.9
0.85
1.2
V
V
195
100
140
195
280
350
170
250
350
500
365
175
260
365
520
630
220
310
460
630
20
40
100
120
120
180
250
380
80
80
120
160
240
40
40
45
60
60
BCY58-BCY59
ELECTRICAL CHARACTERISTICS (continued)
Symbol
hfe
Parameter
Small Signal Current Gain
Test Conditions
I C = 2 mA
f = 1 kHz
I C =10 mA
f = 100 MHz
V CE = 5 V
IC = 0
f = 1 MHz
V E B = 0.5 V
Collector-base Capacitance
IE = 0
f = 1 MHz
V CB = 10 V
NF
Noise Figure
I C = 0.2 mA
R g = 2 kΩ
V CE = 5 V
f = 1 kHz
to n
Turn-on Time
I C = 10 mA
I B1 = 1 mA
I C = 100 mA
I B1 = 10 mA
V CC = 10 V
C EBO
C CBO
t off
*
Transition Frequency
Emitter-base Capacitance
Turn-off Time
Typ.
Max.
Unit
V CE = 5 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
fT
Min.
125
125
175
250
350
250
350
500
700
200
MHz
11
15
pF
3.5
6
pF
2
6
dB
85
150
ns
55
150
ns
480
800
ns
480
800
ns
V CC = 10 V
I C = 10 mA
V CC = 10 V
I B1 = – I B2 = 1 mA
I C = 100 mA
V CC = 10 V
I B1 = – I B2 = 10 mA
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
DC Current Gain.
Collector-emitter Saturation Voltage.
3/6
BCY58-BCY59
Transition Frequency.
Collector-base Capacitance.
Noise Figure (f = 100 Hz).
Noise Figure (f = 1 kHz).
Noise Figure (f = 10 kHz).
Noise Figure vs. Frequency.
4/6
BCY58-BCY59
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
A
G
I
E
F
H
B
L
C
0016043
5/6
BCY58-BCY59
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
6/6