2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. 2N2219A approved to CECC 50002-100, 2N2222A approved to CECC 50002-101 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Value Un it V CBO Collector-Base Voltage (IE = 0) 75 V V CEO Collector-Emitter Voltage (IB = 0) 40 V V EBO Emitter-Base Voltage (I C = 0) 6 V 0.8 A 0.8 0.5 W W 3 1.8 W W IC P tot T s tg Tj June 1999 Parameter Collector Current T otal Dissipation at Tamb ≤ 25 C for 2N2219A for 2N2222A at T ca se ≤ 25 oC for 2N2219A for 2N2222A o Storage T emperature Max. Operating Junction Temperature -65 to 200 o C 175 o C 1/8 2N2219A/2N2222A THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max TO-39 T O-18 50 187.5 83.3 300 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Parameter Test Con ditions Min. Typ. Max. Unit 10 10 nA µA I CBO Collector Cut-off Current (IE = 0) V CB = 60 V V CB = 60 V I CEX Collector Cut-off Current (VBE = -3V) V CE = 60 V 10 nA I BEX Base Cut-off Current (V BE = -3V) V CE = 60 V 20 nA IEBO Emitter Cut-off Current (I C = 0) V EB = 3 V 10 nA T case = 150 o C V (BR) CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = 10 µA 75 V V (BR) CEO ∗ Collector-Emitt er Breakdown Voltage (I B = 0) I C = 10 mA 40 V V (BR) EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) I E = 10 µA 6 V V CE(sat) ∗ Collector-Emitt er Saturation Voltage I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA 0.6 DC Current G ain I C = 0.1 mA I C = 1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 150 mA I C = 10 mA T amb = -55 oC V CE V CE V CE V CE V CE V CE V CE 35 50 75 100 40 50 h FE∗ V V 1.2 2 V V 300 35 h fe ∗ Small Signal Current Gain I C = 1 mA I C = 10 mA fT Transition Frequency I C = 20 mA f = 100 MHz C EBO Emitter Base Capacitance IC = 0 V EB = 0.5 V f = 100KHz 25 pF C CBO Collector Base Capacitance IE = 0 VCB = 10 V f = 100 KHz 8 pF R e (hie) Real Part of Input Impedance I C = 20 mA f = 300MHz 60 Ω ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/8 = 10 V = 10 V = 10 V = 10 V = 10 V =1V = 10 V 0.3 1 V CE = 10 V V CE = 10 V f = 1KHz f = 1KHz V CE = 20 V V CE = 20 V 50 75 300 375 300 MHz 2N2219A/2N2222A ELECTRICAL CHARACTERISTICS (continued) Symbo l Parameter Test Con ditions NF Noise Figure I C = 0.1 mA V CE = 10 V f = 1KHz R g = 1KΩ hie Input Impedance I C = 1 mA I C = 10 mA V CE = 10 V VCE = 10 V h re Reverse Voltage Ratio I C = 1 mA I C = 10 mA V CE = 10 V VCE = 10 V h oe Output Admittance I C = 1 mA I C = 10 mA V CE = 10 V VCE = 10 V t d ∗∗ Delay Time V CC = 30 V I B1 = 15 mA t r∗∗ Rise Time V CC = 30 V I B1 = 15 mA t s ∗∗ Storage T ime t f ∗∗ r bb ’ C b’ c Min. Typ. Max. 4 2 0.25 Unit dB 8 1.25 kΩ kΩ 8 4 10 -4 10 -4 35 200 µS µS IC = 150 mA VBB = -0.5 V 10 ns IC = 150 mA VBB = -0.5 V 25 ns V CC = 30 V I C = 150 mA I B1 = -IB2 = 15 mA 225 ns Fall T ime V CC = 30 V I C = 150 mA I B1 = -IB2 = 15 mA 60 ns Feedback Time Constant I C = 20 mA VCE = 20 V f = 31.8MHz 150 ps 5 25 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % ∗∗ See test circuit 3/8 2N2219A/2N2222A Normalized DC Current Gain. Collector-emitter Saturation Voltage. Contours of Constant Narrow Band Noise Figure. Switching Time vs. Collector Current. 4/8 2N2219A/2N2222A Test Circuit fot td, tr. PULSE GENERATOR : tr ≤ 20 ns PW ≤ 200 ns ZIN = 50 Ω TO OSCILLOSCOPE tr ≤ 5.0 ns ZIN < 100 KΩ CIN ≤ 12 pF PULSE GENERATOR : PW ≈ 10 µs ZIN = 50 Ω TC ≤ 5.0 ns TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 100 KΩ CIN ≤ 12 pF Test Circuit fot td, tr. 5/8 2N2219A/2N2222A TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 6/8 2N2219A/2N2222A TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 7/8 2N2219A/2N2222A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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