STMICROELECTRONICS SO2222A

SO2222
SO2222A
SMALL SIGNAL NPN TRANSISTORS
■
■
■
■
Type
Marking
SO2222
N13
SO 2222A
N20
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING
PNP COMPLEMENTS ARE RESPECTIVELY
SO2907 AND SO2907A
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
SO2222
SO 2222A
V CBO
Collector-Emitter Voltage (V BE = 0)
60
75
V
V CEO
Collector-Emitter Voltage (I B = 0)
30
40
V
V EBO
Emitter-Base Voltage (I C = 0)
5
6
V
I CM
Collector Peak Current
P t ot
Total Dissipation at T c = 25 C
T stg
Storage Temperature
Tj
March 1996
o
Max. O perating Junction Temperature
0.8
A
350
mW
-65 to 150
o
C
150
o
C
1/5
SO2222/SO2222A
THERMAL DATA
R t hj-amb •
R th j-SR •
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Substrate
Max
Max
o
350
290
o
C/W
C/W
• Mounted on a ceramic substrate area = 15 x 15 x 0.6 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
I CEX
Collector Cut-off
Current (V BE = 0)
V CE = 60 V V BE = -3 V
for SO2222A
10
nA
I BEX
Base Cut-off Current
(V BE = 0)
V CE = 60 V V BE = -3 V
for SO2222A
20
nA
I CBO
Collector Cut-off
Current (IE = 0)
V CB = rated V CBO
V CB = rated V CBO
10
10
nA
µA
Emitter Cut-off Current
(I C = 0)
V EB = 3 V
for SO2222
for SO2222A
30
15
nA
nA
I EBO
o
T j = 150 C
V ( BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
for SO2222
for SO2222A
30
40
V
V
V ( BR)CBO ∗ Collector-Base
Breakdown Voltage
(I B = 0)
I C = 10 µA
for SO2222
for SO2222A
60
75
V
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 µA
for SO2222
for SO2222A
5
6
V
V
Collector-Emitter
Saturation Voltage
I C = 150 mA I B = 15 mA
for SO2222
for SO2222A
I C = 500 mA I B = 50 mA
for SO2222
for SO2222A
V CE(sat )∗
V BE(s at)∗
h FE∗
fT
C CB
Collector-Base
Saturation Voltage
DC Current G ain
Transition F requency
Collector Base
Capacitance
I C = 150 mA I B = 15 mA
for SO2222
for SO2222A
I C = 500 mA I B = 50 mA
for SO2222
for SO2222A
I C = 0.1 mA
I C = 1 mA
I C = 10 mA
I C = 150 mA
I C = 150 mA
I C = 500 mA
for SO2222
for SO2222A
IE = 0
V CB = 10 V
35
50
75
100
50
V
V
1.6
1
V
V
1.3
1.2
V
V
2.6
2
V
V
300
30
40
I C = 20 mA VCE = 20V f = 100MHz
for SO2222
for SO2222A
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
2/5
V CE = 10 V
V CE = 10 V
VCE = 10 V
V CE = 10 V
V CE = 1 V
V CE = 10 V
0.6
0.4
0.3
f = 1 MHz
250
300
MHz
MHz
8
pF
SO2222/SO2222A
ELECTRICAL CHARACTERISTICS (Continued)
Symb ol
C EB
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
30
25
pF
pF
4
dB
8
1.25
KΩ
KΩ
8
4
10 -4
-4
10
Emitter Base
Capacitance
I E = 0 V EB = 0.5 V
for SO2222
for SO2222A
NF
Noise Figure
I C = 0.1 mA VCE = 10 V
∆f = 200 Hz R G = 1 KΩ
for SO2222A only
f = 1 KHz
h i e∗
Input Impedance
V CE = 10 V I C = 1 mA
V CE = 10 V I C = 10 mA
for SO2222A only
f = 1 KHz
f = 1 KHz
h re∗
Reverse Voltage Ratio
V CE = 10 V I C = 1 mA
V CE = 10 V I C = 10 mA
for SO2222A only
f = 1 KHz
f = 1 KHz
h fe ∗
Small Signal Current
Gain
V CE = 10 V I C = 1 mA
V CE = 10 V I C = 10 mA
for SO2222A only
f = 1 KHz
f = 1 KHz
50
75
300
375
h oe∗
Output Admittance
V CE = 10 V I C = 1 mA
V CE = 10 V I C = 10 mA
for SO2222A only
f = 1 KHz
f = 1 KHz
5
25
35
200
µS
µS
td
Delay Time
I C = -150 mA V BE = -0.5 V
for SO2222A only
10
ns
tr
Rise Time
ts
Storage Time
tf
Fall T ime
f = 1MHz
I C = 150 mA I B1 = -I B2 = 15mA
for SO2222A only
2
0.25
25
ns
225
ns
60
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
3/5
SO2222/SO2222A
SOT-23 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
mils
MAX.
MIN.
TYP.
MAX.
A
0.85
1.1
33.4
43.3
B
0.65
0.95
25.6
37.4
C
1.20
1.4
47.2
55.1
D
2.80
3
110.2
118
E
0.95
1.05
37.4
41.3
F
1.9
2.05
74.8
80.7
G
2.1
2.5
82.6
98.4
H
0.38
0.48
14.9
18.8
L
0.3
0.6
11.8
23.6
M
0
0.1
0
3.9
N
0.3
0.65
11.8
25.6
O
0.09
0.17
3.5
6.7
0044616/B
4/5
SO2222/SO2222A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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.
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