SO2222 SO2222A SMALL SIGNAL NPN TRANSISTORS ■ ■ ■ ■ Type Marking SO2222 N13 SO 2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY SO2907 AND SO2907A 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t SO2222 SO 2222A V CBO Collector-Emitter Voltage (V BE = 0) 60 75 V V CEO Collector-Emitter Voltage (I B = 0) 30 40 V V EBO Emitter-Base Voltage (I C = 0) 5 6 V I CM Collector Peak Current P t ot Total Dissipation at T c = 25 C T stg Storage Temperature Tj March 1996 o Max. O perating Junction Temperature 0.8 A 350 mW -65 to 150 o C 150 o C 1/5 SO2222/SO2222A THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max o 350 290 o C/W C/W • Mounted on a ceramic substrate area = 15 x 15 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CEX Collector Cut-off Current (V BE = 0) V CE = 60 V V BE = -3 V for SO2222A 10 nA I BEX Base Cut-off Current (V BE = 0) V CE = 60 V V BE = -3 V for SO2222A 20 nA I CBO Collector Cut-off Current (IE = 0) V CB = rated V CBO V CB = rated V CBO 10 10 nA µA Emitter Cut-off Current (I C = 0) V EB = 3 V for SO2222 for SO2222A 30 15 nA nA I EBO o T j = 150 C V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA for SO2222 for SO2222A 30 40 V V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I B = 0) I C = 10 µA for SO2222 for SO2222A 60 75 V V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 10 µA for SO2222 for SO2222A 5 6 V V Collector-Emitter Saturation Voltage I C = 150 mA I B = 15 mA for SO2222 for SO2222A I C = 500 mA I B = 50 mA for SO2222 for SO2222A V CE(sat )∗ V BE(s at)∗ h FE∗ fT C CB Collector-Base Saturation Voltage DC Current G ain Transition F requency Collector Base Capacitance I C = 150 mA I B = 15 mA for SO2222 for SO2222A I C = 500 mA I B = 50 mA for SO2222 for SO2222A I C = 0.1 mA I C = 1 mA I C = 10 mA I C = 150 mA I C = 150 mA I C = 500 mA for SO2222 for SO2222A IE = 0 V CB = 10 V 35 50 75 100 50 V V 1.6 1 V V 1.3 1.2 V V 2.6 2 V V 300 30 40 I C = 20 mA VCE = 20V f = 100MHz for SO2222 for SO2222A ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/5 V CE = 10 V V CE = 10 V VCE = 10 V V CE = 10 V V CE = 1 V V CE = 10 V 0.6 0.4 0.3 f = 1 MHz 250 300 MHz MHz 8 pF SO2222/SO2222A ELECTRICAL CHARACTERISTICS (Continued) Symb ol C EB Parameter Test Cond ition s Min. Typ . Max. Un it 30 25 pF pF 4 dB 8 1.25 KΩ KΩ 8 4 10 -4 -4 10 Emitter Base Capacitance I E = 0 V EB = 0.5 V for SO2222 for SO2222A NF Noise Figure I C = 0.1 mA VCE = 10 V ∆f = 200 Hz R G = 1 KΩ for SO2222A only f = 1 KHz h i e∗ Input Impedance V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA for SO2222A only f = 1 KHz f = 1 KHz h re∗ Reverse Voltage Ratio V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA for SO2222A only f = 1 KHz f = 1 KHz h fe ∗ Small Signal Current Gain V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA for SO2222A only f = 1 KHz f = 1 KHz 50 75 300 375 h oe∗ Output Admittance V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA for SO2222A only f = 1 KHz f = 1 KHz 5 25 35 200 µS µS td Delay Time I C = -150 mA V BE = -0.5 V for SO2222A only 10 ns tr Rise Time ts Storage Time tf Fall T ime f = 1MHz I C = 150 mA I B1 = -I B2 = 15mA for SO2222A only 2 0.25 25 ns 225 ns 60 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 3/5 SO2222/SO2222A SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 4/5 SO2222/SO2222A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 5/5