STMICROELECTRONICS ST13003

ST13003

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
V CES
Collector-Emitter Voltage (V BE = 0)
700
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage
(I C = 0, IB = 0.75 A, t p < 10µs, Tj < 150 o C)
Collector Current
BV EBO
V
1.5
A
IC
I CM
IB
I BM
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (t p < 5 ms)
o
P t ot
Total Dissipation at T c = 25 C
T stg
St orage Temperature
June 2000
3
A
0.75
A
1.5
A
40
-65 to 150
W
o
C
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ST13003
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
3.12
89
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CEV
Parameter
Test Cond ition s
Min.
Collector Cut-off
Current (V BE = -1.5V)
V CE = 700V
V CE = 700V
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 mA
9
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 10 mA
L = 25mH
400
BV EBO
Typ .
o
T j = 125 C
Max.
Un it
1
5
mA
mA
18
V
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
I C = 1.5 A
I B = 0.1 A
IB = 0.25 A
I B = 0.5 A
0.5
1
3
V
V
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
I B = 0.1 A
IB = 0.25 A
1.0
1.2
V
V
DC Current G ain
I C = 0.5 A
Group A
Group B
IC = 1 A
V CE = 2 V
IC = 1 A
I B1 = 0.2 A
T p = 25 µs
V CC = 125 V
I B2 = -0.2 A
h FE
tr
ts
tf
RESISTIVE LO AD
Rise Time
Storage Time
Fall T ime
ts
INDUCTIVE LOAD
Storage Time
IC = 1 A
V BE = -5 V
V c la mp = 300 V
V CE = 2 V
IB1 = 0.2 A
L = 50 mH
8
15
5
20
35
25
1.0
4.0
0.7
0.8
µs
µs
µs
µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
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ST13003
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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ST13003
Inductive Fall Time
Reverse Biased SOA
4/7
Inductive Storage Time
ST13003
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Resistive Load Switching Test Circuits.
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ST13003
SOT-32 (TO-126) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
e3
2.2
4.15
F
G
H
0.087
4.65
0.163
3.8
3
0.183
0.150
3.2
0.118
2.54
0.126
0.100
H2
c1
0016114
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ST13003
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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