STMICROELECTRONICS STB13005

ST13005
STB13005-1

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■
■
■
■
■
■
MEDIUM VOLTAGE CAPABILITY
NPN TRANSISTORS
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The devices are is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
1
2
3
TO-220
3
12
I2PAK
TO-262
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CES
Collector-Emitter Voltage (V BE = 0)
700
V
V CEO
Collector-Emitter Voltage (IB = 0)
400
V
V EBO
Emitter-Base Voltage (IC = 0)
9
V
Collector Current
4
A
Collector Peak Current (tp < 5 ms)
8
A
IC
I CM
IB
Base Current
2
A
I BM
Base Peak Current (tp < 5 ms)
4
A
P t ot
Total Dissipation at Tc = 25 o C
T stg
St orage Temperature
Tj
Max. Operating Junction Temperature
January 1999
75
W
-65 to 150
o
C
150
o
C
1/8
ST13005 / STB13005-1
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
1.67
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CEV
I EBO
Parameter
Test Cond ition s
Collector Cut-off
Current (V BE = -1.5V)
V CE = 700V
V CE = 700V
Emitter Cut-off
Current (I C = 0)
V EB = 9 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Min.
Typ .
o
T ca se = 100 C
I C = 10 mA
Max.
Un it
1
5
mA
mA
1
mA
400
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 4 A
IB = 0.2 A
IB = 0.5 A
IB = 1 A
0.5
0.6
1
V
V
V BE(s at)∗
Base-Emitt er
Saturation Voltage
IC = 1 A
IC = 2 A
IB = 0.2 A
IB = 0.5 A
1.2
1.6
V
V
DC Current Gain
IC = 1 A
Group A
Group B
IC = 2 A
VCE = 5 V
h FE
ts
tf
RESISTIVE LO AD
Storage Time
Fall Time
IC = 2 A
I B1 = -IB2 = 0.4 A
V CC = 125 V
VCE = 5 V
15
27
8
32
45
40
1.5
3.0
0.2
Tp = 30 µs
µs
µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
2/8
ST13005 / STB13005-1
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/8
ST13005 / STB13005-1
Inductive Fall Time
Inductive Storage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/8
ST13005 / STB13005-1
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/8
ST13005 / STB13005-1
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
6/8
ST13005 / STB13005-1
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
7/8
ST13005 / STB13005-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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